HMC452ST89 / 452ST89E v01.0205 AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Designer’s Kit Available Typical Applications Features The HMC452ST89 / HMC452ST89E is ideal for applications requiring a high dynamic range amplifier: Output IP3: +49 dBm • GSM, GPRS & EDGE 9 dB Gain @ 2100 MHz • CDMA & W-CDMA 50% PAE @ +31 dBm Pout • CATV/Cable Modem • Fixed Wireless +25 dBm CDMA2000 Channel Power @ -45 dBc ACP Included in the HMC-DK002 Designer’s Kit Functional Diagram General Description 21 dB Gain @ 400 MHz The HMC452ST89 & HMC452ST89E are high dynamic range GaAs InGaP HBT 1 Watt MMIC power amplifiers operating from 0.4 to 2.2 GHz and packaged in industry standard SOT89 packages. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +45 dBm at 0.4 GHz or +49 dBm at 2.1 GHz. The high output IP3 and PAE make the HMC452ST89 & HMC452ST89E ideal power amplifiers for Cellular/ PCS/3G and Fixed Wireless applications. Electrical Specifications, TA = +25°C, Vs= +5V [1] Parameter Min. Frequency Range Gain Typ. Max. Min. 400 - 410 19 Gain Variation Over Temperature 21 0.012 Typ. Max. Min. 450 - 496 18 0.02 20 0.012 Typ. Max. Min. 810 - 960 13.5 0.02 15.5 0.012 Typ. Max. Min. 1710 - 1990 7 0.02 9.5 0.012 Typ. Max. Units 2010 - 2170 MHz 9 dB 7 0.02 0.012 0.02 dB / °C Input Return Loss 22 16 13 13 20 dB Output Return Loss 11 11 14 15 15 dB 31.5 dBm 32 dBm 49 dBm Output Power for 1dB Compression (P1dB) 27 Saturated Output Power (Psat) Output Third Order Intercept (IP3) [2] 30 27 30.5 42 45 30 27.5 30.5 42 45 30.5 28 31.5 44 47 31 28.5 31.5 45 48 46 Noise Figure 6.5 7 6.5 6.5 6.5 dB Supply Current (Icq) 510 510 510 510 510 mA [1] Specifications and data reflect HMC452ST89 measured using the respective application circuits for each designated frequency band found herein. Contact the HMC Applications Group for assistance in optimizing performance for your application. [2] Two-tone input power of 0 dBm per tone, 1 MHz spacing. 5 - 274 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452ST89 / 452ST89E v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 400 MHz 23 20 22 21 10 20 S21 GAIN (dB) RESPONSE (dB) 15 S11 5 S22 0 19 18 17 16 -5 +25 C 15 +85 C -40 C 14 -10 13 0.2 0.3 0.4 0.5 0.6 12 0.35 0.7 0.37 0.39 0.41 FREQUENCY (GHz) Input Return Loss vs. Temperature @ 400 MHz Output Return Loss vs. Temperature @ 400 MHz 0 0 -5 -2 -10 RETURN LOSS (dB) RETURN LOSS (dB) FREQUENCY (GHz) +25 C +85 C -40 C -15 -20 -25 -30 -35 0.35 -4 0.43 0.45 -8 -10 -12 -14 0.37 0.39 0.41 0.43 -16 0.35 0.45 0.37 33 32 32 31 31 Psat (dBm) 34 33 30 29 28 +25 C +85 C -40 C 26 0.41 Psat vs. Temperature @ 400 MHz 34 27 0.39 FREQUENCY (GHz) P1dB vs. Temperature @ 400 MHz P1dB (dBm) 0.45 +25 C +85 C -40 C -6 FREQUENCY (GHz) 30 29 28 +25 C +85 C -40 C 27 26 25 24 0.35 0.43 AMPLIFIERS - SMT 24 25 -15 0.1 5 Gain vs. Temperature @ 400 MHz 25 0.37 0.39 0.41 FREQUENCY (GHz) 0.43 0.45 24 0.35 0.37 0.39 0.41 0.43 0.45 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 275 HMC452ST89 / 452ST89E v01.0205 Output IP3 vs. Temperature @ 400 MHz Noise Figure vs. Temperature @ 400 MHz 10 48 9 46 8 NOISE FIGURE (dB) 50 44 OIP3 (dBm) 42 40 +25 C 38 +85 C 36 -40 C 7 6 5 4 +25 C 3 +85 C 34 2 -40 C 32 1 30 0.35 0.37 0.39 0.41 0.43 0 0.35 0.45 0.37 0.39 FREQUENCY (GHz) 0 ISOLATION (dB) -5 +25 C +85 C -40 C -15 -20 -25 -30 0.35 0.37 0.39 0.41 0.43 0.45 45 40 35 30 25 20 Gain P1dB 15 10 4.5 4.75 Psat OIP3 5 5.25 5.5 Vs (Vdc) ACPR vs. Supply Voltage @ 400 MHz W-CDMA, 64 DPCH Power Compression @ 400 MHz -10 55 -15 50 45 -20 Pout Gain PAE 40 W-CDMA Frequency: 400 MHz Integration BW: 3.84 MHz 64 DPCH -25 35 ACPR (dBc) Pout (dBm), Gain (dB), PAE (%) 0.45 50 FREQUENCY (GHz) 30 25 20 -30 -35 4.5V 5V -40 5.5V -45 -50 15 -55 10 -60 5 -65 0 Source ACPR -70 0 2 4 6 8 10 INPUT POWER (dBm) 5 - 276 0.43 Gain, Power & IP3 vs. Supply Voltage @ 400 MHz Reverse Isolation vs. Temperature @ 400 MHz -10 0.41 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 12 14 16 8 10 12 14 16 18 20 22 24 Channel Power (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 28 HMC452ST89 / 452ST89E v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 25 23 20 22 21 15 20 S21 10 GAIN (dB) RESPONSE (dB) 5 Gain vs. Temperature @ 470 MHz S11 5 S22 0 19 18 17 16 -5 +25 C +85 C -40 C 15 -10 14 -15 -20 0.1 13 0.2 0.3 0.4 0.5 0.6 12 0.43 0.7 0.45 0.47 0.49 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature @ 470 MHz Output Return Loss vs. Temperature @ 470 MHz 0 0.51 0.53 0.51 0.53 AMPLIFIERS - SMT Broadband Gain & Return Loss @ 470 MHz 0 -2 RETURN LOSS (dB) RETURN LOSS (dB) -5 +25 C +85 C -40 C -10 -15 -4 +25 C +85 C -40 C -6 -8 -10 -12 -20 -14 -25 0.43 0.45 0.47 0.49 0.51 -16 0.43 0.53 0.45 FREQUENCY (GHz) 34 34 33 33 32 32 31 31 30 29 +25 C +85 C -40 C 27 26 30 29 28 +25 C +85 C -40 C 27 26 25 24 0.43 0.49 Psat vs. Temperature @ 470 MHz Psat (dBm) P1dB (dBm) P1dB vs. Temperature @ 470 MHz 28 0.47 FREQUENCY (GHz) 25 0.45 0.47 0.49 FREQUENCY (GHz) 0.51 0.53 24 0.43 0.45 0.47 0.49 0.51 0.53 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 277 HMC452ST89 / 452ST89E v01.0205 Output IP3 vs. Temperature @ 470 MHz Noise Figure vs. Temperature @ 470 MHz 10 48 9 46 8 NOISE FIGURE (dB) 50 44 OIP3 (dBm) 42 40 +25 C 38 +85 C 36 -40 C 7 6 5 +25 C 4 +85 C 3 -40 C 34 2 32 1 30 0.43 0.45 0.47 0.49 0.51 0 0.43 0.53 0.45 0.47 FREQUENCY (GHz) 0 ISOLATION (dB) -5 +25 C +85 C -40 C -15 -20 -25 -30 -35 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 45 Gain P1dB Psat OIP3 40 35 30 25 20 15 10 4.5 4.75 5 -15 -20 Pout Gain PAE 30 25 20 -30 -35 -40 4.5V -45 5V 5.5V -50 15 -55 10 -60 5 -65 0 Source ACPR -70 2 4 6 8 10 INPUT POWER (dBm) 5 - 278 W-CDMA Frequency: 470 MHz Integration BW: 3.84 MHz 64 DPCH -25 ACPR (dBc) Pout (dBm), Gain (dB), PAE (%) -10 50 0 5.5 ACPR vs. Supply Voltage @ 470 MHz W-CDMA, 64 DPCH 55 35 5.25 Vs (Vdc) Power Compression @ 470 MHz 40 0.53 50 FREQUENCY (GHz) 45 0.51 Gain, Power & IP3 vs. Supply Voltage @ 470 MHz Reverse Isolation vs. Temperature @ 470 MHz -10 0.49 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 12 14 16 8 10 12 14 16 18 20 22 24 Channel Power (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 28 HMC452ST89 / 452ST89E v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 5 Gain vs. Temperature @ 900 MHz 20 18 15 17 16 15 5 GAIN (dB) RESPONSE (dB) 10 S21 S11 S22 0 -5 14 13 +25 C 12 +85 C 11 -40 C -10 10 -15 -20 0.4 9 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 8 0.7 1.4 0.75 0.8 0.85 0.9 0.95 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature @ 900 MHz Output Return Loss vs. Temperature @ 900 MHz RETURN LOSS (dB) RETURN LOSS (dB) -5 -10 -15 -20 +25 C +85 C -40 C -25 0.75 0.8 0.85 0.9 0.95 1 1.05 1 1.05 1.1 1.05 1.1 -10 -15 -20 0.7 1.1 0.75 0.8 33 32 32 31 31 Psat (dBm) 34 33 30 29 +25 C +85 C -40 C 27 26 0.9 0.95 Psat vs. Temperature @ 900 MHz 34 28 0.85 FREQUENCY (GHz) P1dB vs. Temperature @ 900 MHz P1dB (dBm) 1.1 +25 C +85 C -40 C -5 FREQUENCY (GHz) 30 29 +25 C +85 C -40 C 28 27 26 25 24 0.7 1.05 0 0 -30 0.7 1 AMPLIFIERS - SMT Broadband Gain & Return Loss @ 900 MHz 25 0.75 0.8 0.85 0.9 0.95 FREQUENCY (GHz) 1 1.05 1.1 24 0.7 0.75 0.8 0.85 0.9 0.95 1 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 279 HMC452ST89 / 452ST89E v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Output IP3 vs. Temperature @ 900 MHz Noise Figure vs. Temperature @ 900 MHz 10 48 9 46 8 NOISE FIGURE (dB) 50 44 OIP3 (dBm) 42 40 38 +25 C +85 C -40 C 36 7 6 5 4 3 34 2 32 1 30 0.75 0.8 0.85 0.9 0.95 1 1.05 +25 C +85 C -40 C 0 0.7 1.1 0.75 0.8 FREQUENCY (GHz) 0 ISOLATION (dB) -5 +25 C +85 C -15 -40 C -20 -25 -30 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 1 1.05 1.1 45 40 35 30 Gain P1dB 25 Psat OIP3 20 15 10 4.5 4.75 5 5.25 5.5 Vs (Vdc) ACPR vs. Supply Voltage @ 910 MHz CDMA IS95, 9 Channels Forward Power Compression @ 900 MHz 55 -10 50 -15 -20 45 Pout Gain PAE 40 35 CDMA IS95 Frequency: 910 MHz Integration BW: 1.228 MHz Forward Link, 9 Channels -25 ACPR (dBc) Pout (dBm), Gain (dB), PAE (%) 0.95 50 FREQUENCY (GHz) 30 25 20 -30 -35 -40 4.5V -45 5V -50 15 -55 10 -60 5 -65 0 6 8 10 12 14 16 INPUT POWER (dBm) 18 20 22 5.5V Source ACPR -70 4 5 - 280 0.9 Gain, Power & IP3 vs. Supply Voltage @ 900 MHz Reverse Isolation vs. Temperature @ 900 MHz -10 0.85 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) AMPLIFIERS - SMT 5 8 10 12 14 16 18 20 22 Channel Power (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 24 26 HMC452ST89 / 452ST89E v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 15 10 S21 S11 S22 0 GAIN (dB) RESPONSE (dB) 5 -5 -10 -15 -20 -25 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 13 12 11 10 9 8 7 6 5 4 3 2 1 0 1.7 +25C +85C -40C 1.8 FREQUENCY (GHz) 1.9 2 2.1 2 2.1 FREQUENCY (GHz) Input Return Loss vs. Temperature @ 1900 MHz Output Return Loss vs. Temperature @ 1900 MHz 0 0 +25 C +85 C -40 C -5 +25 C +85 C -40 C -5 RETURN LOSS (dB) RETURN LOSS (dB) 5 Gain vs. Temperature @ 1900 MHz AMPLIFIERS - SMT Broadband Gain & Return Loss @ 1900 MHz -10 -15 -10 -15 -20 -20 1.7 1.8 1.9 2 -25 1.7 2.1 1.8 FREQUENCY (GHz) Psat vs. Temperature @ 1900 MHz 34 34 33 33 32 32 31 31 Psat (dBm) P1dB (dBm) P1dB vs. Temperature @ 1900 MHz 30 29 28 +25 C +85 C -40 C 27 26 30 29 +25 C +85 C -40 C 28 27 26 25 24 1.7 1.9 FREQUENCY (GHz) 25 1.8 1.9 FREQUENCY (GHz) 2 2.1 24 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 281 HMC452ST89 / 452ST89E v01.0205 Output IP3 vs. Temperature @ 1900 MHz Noise Figure vs. Temperature @ 1900 MHz 10 50 9 48 8 NOISE FIGURE (dB) 52 46 OIP3 (dBm) 44 42 +25 C 40 +85 C 38 -40 C 7 6 5 4 +25 C 3 +85 C 34 2 -40 C 32 1 36 30 1.7 1.8 1.9 2 0 1.7 2.1 1.8 FREQUENCY (GHz) 0 +25 C +85 C -40 C ISOLATION (dB) -10 -15 -20 1.7 1.8 1.9 2 2.1 50 45 40 35 30 25 Gain P1dB Psat OIP3 20 15 10 5 4.5 4.75 5 5.25 5.5 Vs (Vdc) ACPR vs. Supply Voltage @ 1960 MHz CDMA 2000, 9 Channels Forward Power Compression @ 1900 MHz 50 -30 45 -35 Pout Gain PAE 40 35 -40 CDMA2000 Frequency: 1.96 GHz Integration BW: 1.228 MHz Forward Link, SR1, 9 Channels -45 ACPR (dBc) Pout (dBm), Gain (dB), PAE (%) 2.1 55 FREQUENCY (GHz) 30 25 20 -50 4.5V 5V 5.5V -55 -60 15 -65 10 -70 5 -75 0 -80 10 12 14 16 18 20 Input Power (dBm) 5 - 282 2 Gain, Power & IP3 vs. Supply Voltage @ 1900 MHz Reverse Isolation vs. Temperature @ 1900 MHz -5 1.9 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 22 24 26 14 16 18 20 22 24 Output Channel Power (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 28 HMC452ST89 / 452ST89E v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 2100 MHz 5 Gain vs. Temperature @ 2100 MHz 11 10 10 9 S21 S11 S22 0 8 GAIN (dB) RESPONSE (dB) 5 -5 -10 -15 -20 7 6 5 +25 C 4 +85 C 3 -40 C 2 -25 1 -30 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 0 1.9 3 2 FREQUENCY (GHz) Input Return Loss vs. Temperature @ 2100 MHz -10 RETURN LOSS (dB) RETURN LOSS (dB) -5 +25 C +85 C -40 C -15 -20 2.2 2.3 +25 C +85 C -40 C -10 -15 -20 -25 2 2.1 2.2 -25 1.9 2.3 2 FREQUENCY (GHz) Psat vs. Temperature @ 2100 MHz 34 33 33 32 32 31 31 Psat (dBm) 34 30 29 28 +25 C +85 C -40 C 27 30 29 27 26 25 25 2.1 FREQUENCY (GHz) +25 C +85 C -40 C 28 26 2 2.1 FREQUENCY (GHz) P1dB vs. Temperature @ 2100 MHz P1dB (dBm) 2.3 0 -5 24 1.9 2.2 Output Return Loss vs. Temperature @ 2100 MHz 0 -30 1.9 2.1 FREQUENCY (GHz) AMPLIFIERS - SMT 12 15 2.2 2.3 24 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 283 HMC452ST89 / 452ST89E v01.0205 Output IP3 vs. Temperature @ 2100 MHz Noise Figure vs. Temperature @ 2100 MHz 10 50 9 48 8 NOISE FIGURE (dB) 52 46 OIP3 (dBm) 44 42 40 +25 C 38 +85 C 36 -40 C 7 6 5 4 +25 C 3 +85 C 34 2 -40 C 32 1 30 1.9 2 2.1 2.2 0 1.9 2.3 2 FREQUENCY (GHz) 0 +25 C +85 C -40 C ISOLATION (dB) -10 -15 -20 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 50 45 40 35 30 25 Gain P1dB Psat OIP3 20 15 10 5 4.5 4.75 5 5.25 5.5 Vs (Vdc) ACPR vs. Supply Voltage @ 2140 MHz W-CDMA, 64 DPCH Power Compression @ 2100 MHz -20 50 45 35 4.5V -25 Pout Gain PAE 40 W-CDMA Frequency: 2.14 GHz Integration BW: 3.84 MHz 64 DPCH -30 ACPR (dBc) Pout (dBm), Gain (dB), PAE (%) 2.3 55 FREQUENCY (GHz) 30 25 20 -35 5V -40 5.5V -45 -50 15 10 -55 5 -60 0 -65 Source ACPR 10 12 14 16 18 20 22 Input Power (dBm) 5 - 284 2.2 Gain, Power & IP3 vs. Supply Voltage @ 2100 MHz Reverse Isolation vs. Temperature @ 2100 MHz -5 2.1 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 24 26 28 12 14 16 18 20 22 24 OUTPUT CHANNEL POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 28 HMC452ST89 / 452ST89E v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 3 Max Pdiss @ +85C POWER DISSIPATION (W) 5 Absolute Maximum Ratings 2.5 2 1900 MHz 1.5 2100 MHz Collector Bias Voltage (Vcc) +6.0 Vdc RF Input Power (RFin)(Vs +5.0 Vdc) +31 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 41.5 mW/°C above 85 °C) 2.7 W Thermal Resistance (junction to ground paddle) 24.1 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A 1 0 5 10 15 20 25 INPUT POWER (dBm) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS AMPLIFIERS - SMT Power Dissipation Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC452ST89 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC452ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H452 XXXX [2] H452 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 285 HMC452ST89 / 452ST89E v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz AMPLIFIERS - SMT 5 Pin Descriptions Pin Number Function Description 1 RFIN This pin is DC coupled. Off chip matching components are required. See Application Circuit herein. 3 RFOUT RF output and DC Bias input for the output amplifier stage. Off chip matching components are required. See Application Circuit herein. 2, 4 GND These pins & package bottom must be connected to RF/DC ground. Interface Schematic 400 MHz Application Circuit This circuit was used to specify the performance for 400-410 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. Note: C2 should be placed as close to pins as possible. TL1 TL2 TL3 TL4 TL5 50 Ohm 50 Ohm 50 Ohm 50 Ohm 50 Ohm C1 Physical Length 0.09” 0.08” 0.17” 0.04” 0.25” C2 15 pF Electrical Length 2° 2° 4° 1° 6° C3, C4 6.8 pF Impedance PCB Material: 10 mil Rogers 4350, Er = 3.48 5 - 286 Recommended Component Values 12 pF C5 39 pF C6 100 pF C7 2.2 μF L1 47 nH L2 40 nH L3 4.3 nH L4 5.1 nH R1 5.1 Ohm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452ST89 / 452ST89E v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 5 AMPLIFIERS - SMT 400 MHz Evaluation PCB List of Materials for Evaluation PCB 110409-400 Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1 12 pF Capacitor, 0402 Pkg. C2 15 pF Capacitor, 0402 Pkg. C3, C4 6.8 pF Capacitor, 0402 Pkg. C5 39 pF Capacitor, 0402 Pkg. C6 100 pF Capacitor, 0402 Pkg. C7 2.2 μF Capacitor, Tantalum L1 47 nH Inductor, 0603 Pkg. L2 40 nH Inductor, 0402 Pkg. L3 4.3 nH Inductor, 0402 Pkg. L4 5.1 nH Inductor, 0402 Pkg. R1 5.1 Ohm Resistor, 0402 Pkg. U1 HMC452ST89 / HMC452ST89E Linear Amp PCB [2] 110407 Evaluation PCB, 10 mils [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 287 HMC452ST89 / 452ST89E v01.0205 AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 470 MHz Application Circuit This circuit was used to specify the performance for 450-496 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. Note: C2 should be placed as close to pins as possible. TL1 TL2 TL3 TL4 TL5 50 Ohm 50 Ohm 50 Ohm 50 Ohm 50 Ohm C1, C2 12 pF Physical Length 0.09” 0.08” 0.17” 0.04” 0.25” C3 6.8 pF Electrical Length 2.5° 2° 5° 1° 7° C4 5.6 pF Impedance PCB Material: 10 mil Rogers 4350, Er = 3.48 5 - 288 Recommended Component Values C5 39 pF C6 100 pF C7 2.2 μF L1 47 nH L2 40 nH L3 4.7 nH L4 3.9 nH R1 5.1 Ohm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452ST89 / 452ST89E v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 5 AMPLIFIERS - SMT 470 MHz Evaluation PCB List of Materials for Evaluation PCB 110416-470 Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1, C2 12 pF Capacitor, 0402 Pkg. C3 6.8 pF Capacitor, 0402 Pkg. C4 5.6 pF Capacitor, 0402 Pkg. C5 39 pF Capacitor, 0402 Pkg. C6 100 pF Capacitor, 0402 Pkg. C7 2.2 μF Capacitor, Tantalum L1 47 nH Inductor, 0603 Pkg. L2 40 nH Inductor, 0402 Pkg. L3 4.7 nH Inductor, 0402 Pkg. L4 3.9 nH Inductor, 0402 Pkg. R1 5.1 Ohm Resistor, 0402 Pkg. U1 HMC452ST89 / HMC452ST89E Linear Amp PCB [2] 110407 Evaluation PCB, 10 mils [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 289 HMC452ST89 / 452ST89E v01.0205 AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 900 MHz Application Circuit This circuit was used to specify the performance for 810-960 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. Note: C2 should be placed as close to pins as possible. TL1 TL2 TL3 50 Ohm 50 Ohm 50 Ohm C1 27 pF Physical Length 0.21” 0.13” 0.38” C2 6.8 pF Electrical Length 11° 7° 20° C3 2.2 pF Impedance PCB Material: 10 mil Rogers 4350, Er = 3.48 5 - 290 Recommended Component Values C4 4.7 pF C5 5.6 pF C6 100 pF C7 2.2 μF L1 20 nH R1 5.1 Ohm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452ST89 / 452ST89E v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 5 AMPLIFIERS - SMT 900 MHz Evaluation PCB List of Materials for Evaluation PCB 110384-900 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1 27 pF Capacitor, 0402 Pkg. C2 6.8 pF Capacitor, 0402 Pkg. C3 2.2 pF Capacitor, 0402 Pkg. C4 4.7 pF Capacitor, 0402 Pkg. C5 5.6 pF Capacitor, 0402 Pkg. C6 100 pF Capacitor, 0402 Pkg. C7 2.2 μF Capacitor, Tantalum L1 20 nH Inductor, 0402 Pkg. R1 5.1 Ohm Resistor, 0402 Pkg. U1 HMC452ST89 / HMC452ST89E Linear Amp PCB [2] 110382 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 291 HMC452ST89 / 452ST89E v01.0205 AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 1900 MHz Application Circuit This circuit was used to specify the performance for 1710-1990 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. Note: C2 should be placed as close to pins as possible. TL1 TL2 50 Ohm 50 Ohm C1 Physical Length 0.04” 0.10” C2 2 pF Electrical Length 4° 11° C3 3.3 pF Impedance PCB Material: 10 mil Rogers 4350, Er = 3.48 5 - 292 Recommended Component Values 3 pF C4 15 pF C5 100 pF C6 2.2 μF L1 10 nH L2 12 nH R1 5.1 Ohm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452ST89 / 452ST89E v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 5 AMPLIFIERS - SMT 1900 MHz Evaluation PCB List of Materials for Evaluation PCB 108712-1900 Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1 3 pF Capacitor, 0402 Pkg. C2 2 pF Capacitor, 0402 Pkg. C3 3.3 pF Capacitor, 0402 Pkg. C4 15 pF Capacitor, 0402 Pkg. C5 100 pF Capacitor, 0402 Pkg. C6 2.2 μF Capacitor, Tantalum L1 10 nH Inductor, 0402 Pkg. L2 12 nH Inductor, 0402 Pkg. R1 5.1 Ohm Resistor, 0402 Pkg. U1 HMC452ST89 / HMC452ST89E Linear Amp PCB [2] 108710 Evaluation PCB, 10 mils [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 293 HMC452ST89 / 452ST89E v01.0205 AMPLIFIERS - SMT 5 2100 MHz Application Circuit This circuit was used to specify the performance for 2010-2170 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. TL1 TL2 50 Ohm 50 Ohm C1 Physical Length 0.04” 0.04” C2 2 pF Electrical Length 5° 5° C3 3.3 pF Impedance PCB Material: 10 mil Rogers 4350, Er = 3.48 5 - 294 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Recommended Component Values 3 pF C4 15 pF C5 100 pF C6 2.2 μF L1 12 nH L2 10 nH R1 5.1 Ohm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452ST89 / 452ST89E v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 5 AMPLIFIERS - SMT 2100 MHz Evaluation PCB List of Materials for Evaluation PCB 109824-2100 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1 3 pF Capacitor, 0402 Pkg. C2 2 pF Capacitor, 0402 Pkg. C3 3.3 pF Capacitor, 0402 Pkg. C4 15 pF Capacitor, 0402 Pkg. C5 100 pF Capacitor, 0402 Pkg. C6 2.2 μF Capacitor, Tantalum L1 12 nH Inductor, 0402 Pkg. L2 10 nH Inductor, 0402 Pkg. R1 5.1 Ohm Resistor, 0402 Pkg. U1 HMC452ST89 / HMC452ST89E Linear Amp PCB [2] 109822 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 295