RN47A6 TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A6 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Equivalent Circuit and Bias Resistor Values Q1 Q2 C R1 R1 R2 B R2 B C JEDEC E JEITA E TOSHIBA Q1 ― ― 2-2L1D Weight: 0.0062g (typ.) R1: 100 kΩ, R2: 100 kΩ Q2 R1: 100 kΩ, R2: 100 kΩ Q1: RN1130F Q2: RN2130F Marking Equivalent Circuit (top view) 5 4 5 56 1 2 4 Q2 Q1 3 1 1 2 3 2007-11-01 RN47A6 Absolute Maximum Ratings (Ta = 25°C) (Q1) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 10 V IC 100 mA Collector current Absolute Maximum Ratings (Ta = 25°C) (Q2) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −10 V IC −100 mA Collector current Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Collector power dissipation Junction temperature Storage temperature range Symbol Rating Unit 200 mW Tj 150 °C Tstg −55~150 °C PC (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating 2 2007-11-01 RN47A6 Electrical Characteristics (Ta = 25°C) (Q1) Characteristics Collector cut-off current Emitter cut-off current Symbol Test Condition Min Typ. Max ICBO VCB = 50 V, IE = 0 ⎯ ⎯ 100 ICEO VCE = 50 V, IB = 0 ⎯ ⎯ 500 IEBO VEB = 10 V, IC = 0 0.038 ⎯ 0.072 hFE VCE = 5 V, IC = 10 mA Unit nA mA 100 ⎯ ⎯ VCE (sat) IC = 5 mA, IB = 0.25 mA ⎯ 0.1 0.3 V Input voltage (ON) VI (ON) VCE = 0.2 V, IC = 5 mA 1.7 ⎯ 8.2 V Input voltage (OFF) VI (OFF) VCE = 5 V, IC = 0.1 mA 1.0 ⎯ 1.6 V Transition frequency fT VCE = 10 V, IC = 5 mA ⎯ 250 ⎯ MHz VCB = 10 V, IE = 0, f = 1 MHz ⎯ 3 ⎯ pF kΩ DC current gain Collector-emitter saturation voltage Collector output capacitance Cob Input resistor R1 ⎯ 70 100 130 Resistor ratio R1/R2 ⎯ 0.8 1.0 1.2 Test Condition Min Typ. Max Electrical Characteristics (Ta = 25°C) (Q2) Characteristics Symbol ICBO VCB = −50 V, IE = 0 ⎯ ⎯ −100 ICEO VCE = −50 V, IB = 0 ⎯ ⎯ −500 Emitter cut-off current IEBO VEB = −10 V, IC = 0 −0.038 ⎯ −0.072 DC current gain hFE VCE = −5 V, IC = −10 mA 100 ⎯ ⎯ Collector cut-off current Unit nA mA VCE (sat) IC = −5 mA, IB = −0.25 mA ⎯ −0.1 −0.3 V Input voltage (ON) VI (ON) VCE = −0.2 V, IC = −5 mA −1.7 ⎯ −8.2 V Input voltage (OFF) VI (OFF) VCE = −5 V, IC = −0.1 mA −1.0 ⎯ −1.6 V Transition frequency fT VCE = −10 V, IC = −5 mA ⎯ 200 ⎯ MHz VCB = −10 V, IE = 0, f = 1 MHz ⎯ 3 ⎯ pF kΩ Collector-emitter saturation voltage Collector output capacitance Cob Input resistor R1 ⎯ 70 100 130 Resistor ratio R1/R2 ⎯ 0.8 1.0 1.2 3 2007-11-01 RN47A6 Q1 IC − VI (OFF) IC− VI (ON) 10000 COMMON EMITTER VCE=0.2V COLLECTOR CURRENT IC (μA) COLLECTOR CURRENT IC(mA) 100 10 Ta=100°C 25 1 -25 0.1 Ta=100°C 1000 25 100 -25 COMMON EMITTER VCE=5V 10 0.1 1 10 INPUT VOLTAGE VI(ON) ( V) 100 0 1 2 3 INPUT VOLTAGE VI(OFF) ( V) hFE − IC VCE(sat) − IC DC CURRENT GAIN hFE -25 100 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1000 COMMON EMITTER VCE=5V 4 Ta=100°C 25 10 1 COMMON EMITTER IC / IB=20 0.1 Ta=100°C -25 25 0.01 1 10 COLLECTOR CURRENT IC (mA) 100 4 1 10 COLLECTOR CURRENT IC (mA) 100 2007-11-01 RN47A6 Q2 IC − VI(ON) -100 COLLECTOR CURRENT IC (μA) COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE= - 0.2V Ta=100°C -10 25 -25 -1 -0.1 -0.1 IC − VI(OFF) -10000 Ta=100°C -1000 25 -100 -25 COMMON EMITTER VCE= - 5V -10 -1 -10 -0 -100 INPUT VOLTAGE VI(ON) ( V) DC CURRENT GAIN hFE COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)(V) hFE − IC 1000 Ta=100°C 100 25 -25 COMMON EMITTER VCE= - 5V 10 -1 -10 -1 -2 -3 -4 -5 INPUT VOLTAGE VI(OFF) ( V) -100 VCE(sat) − IC -1 COMMON EMITTER IC / IB=20 Ta=100°C -0.1 -0.01 -1 COLLECTOR CURRENT IC (mA) 25 -25 -10 -100 COLLECTER CURRENT IC (mA) 5 2007-11-01 RN47A6 Q1, Q2 Common COLLECTOR POWER DISSIPATION PC (mW) PC* – Ta 250 200 150 100 50 0 0 25 50 75 100 125 AMBIENT TEMPERATURE Ta 150 175 (°C) *Total Rating. 6 2007-11-01 RN47A6 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-11-01