IRF IRFH5300TR2PBF Hexfet power mosfet Datasheet

PD -97410
IRFH5300PbF
HEXFET® Power MOSFET
VDS
30
V
RDS(on) max
1.4
m
50
1.3
nC
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
100
(@Tc(Bottom) = 25°C)
:
:
h
A
PQFN 5X6 mm
Applications
• OR-ing MOSFET for 12V (typical) Bus in-Rush Current
• Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Benefits
Features
Low RDSon (≤ 1.4mΩ)
Low Thermal Resistance to PCB (≤ 0.5°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
results in Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Compatible with Existing Surface Mount Techniques
Environmentally Friendlier
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Increased Reliability
Orderable part number
IRFH5300TRPBF
IRFH5300TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
g
g
c
g
Max.
30
± 20
40
32
100
100
h
h
400
3.6
250
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through † are on page 8
www.irf.com
1
9/17/09
IRFH5300PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)
IDSS
IGSS
gfs
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Output Charge
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
190
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
1.1
1.7
1.8
-6.2
–––
–––
–––
–––
–––
120
50
12
6.5
16
16
23
30
Conditions
Max. Units
–––
V VGS = 0V, ID = 250μA
––– V/°C Reference to 25°C, ID = 1mA
1.4
VGS = 10V, ID = 50A
mΩ
VGS = 4.5V, ID = 50A
2.1
2.35
V
VDS = VGS, ID = 150μA
––– mV/°C
5.0
VDS = 24V, VGS = 0V
μA
VDS = 24V, VGS = 0V, TJ = 125°C
150
VGS = 20V
100
nA
-100
VGS = -20V
–––
S VDS = 15V, ID = 50A
–––
nC VGS = 10V, VDS = 15V, ID = 50A
75
VDS = 15V
–––
–––
VGS = 4.5V
nC
–––
ID = 50A
–––
See Fig.17 & 18
–––
–––
nC VDS = 16V, VGS = 0V
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
1.3
26
30
31
13
7200
1360
590
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
e
e
Ω
ns
pF
VDD = 15V, VGS = 4.5V
ID = 50A
RG=1.8Ω
See Fig.15
VGS = 0V
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
c
Max.
420
50
Typ.
–––
–––
d
Units
mJ
A
Diode Characteristics
IS
Parameter
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
trr
Qrr
ton
c
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min.
Typ.
–––
–––
Max. Units
100
h
–––
–––
400
–––
–––
–––
34
1.0
51
Conditions
MOSFET symbol
D
A
showing the
integral reverse
V
ns
p-n junction diode.
TJ = 25°C, IS = 50A, VGS = 0V
TJ = 25°C, IF = 50A, VDD = 15V
di/dt = 200A/μs
G
S
e
–––
68
100
nC
Time is dominated by parasitic Inductance
e
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
2
f
f
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Parameter
g
g
Typ.
–––
–––
–––
–––
Max.
0.5
15
35
21
Units
°C/W
www.irf.com
IRFH5300PbF
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
10
2.7V
BOTTOM
100
2.7V
≤ 60μs PULSE WIDTH
Tj = 25°C
≤ 60μs PULSE WIDTH
Tj = 150°C
1
10
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
TJ = 150°C
10
TJ = 25°C
1
0.1
VDS = 15V
≤ 60μs PULSE WIDTH
0.01
1.0
2.0
3.0
4.0
5.0
ID = 50A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20
VGS, Gate-to-Source Voltage (V)
100000
20
40
60
80 100 120 140 160
Fig 4. Normalized On-Resistance Vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
0
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
C, Capacitance (pF)
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
Ciss
Coss
1000
Crss
ID= 50A
12
VDS= 24V
VDS= 15V
10
8
6
4
2
0
100
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
www.irf.com
0
40
80
120
160
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
3
IRFH5300PbF
1000
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
TJ = 150°C
100
10
TJ = 25°C
1
100μsec
100
1msec
10
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1.6
VSD, Source-to-Drain Voltage (V)
10
100
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
3.0
350
VGS(th) Gate threshold Voltage (V)
LIMITED BY PACKAGE
300
ID, Drain Current (A)
1
VDS, Drain-to-Source Voltage (V)
250
200
150
100
50
2.5
2.0
1.5
1.0
0
25
50
75
100
125
150
ID = 1.0A
ID = 1.0mA
ID = 500μA
ID = 150μA
0.5
175
-75 -50 -25
TC, Case Temperature (°C)
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Case (Bottom) Temperature
Fig 10. Threshold Voltage Vs. Temperature
Thermal Response ( ZthJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
www.irf.com
6
EAS, Single Pulse Avalanche Energy (mJ)
( Ω)
RDS (on), Drain-to -Source On Resistance m
IRFH5300PbF
ID = 50A
5
4
3
2
TJ = 125°C
1
TJ = 25°C
0
2
4
6
8
10
12
14
16
18
2000
I D
15A
21A
BOTTOM 50A
TOP
1600
1200
800
400
0
20
25
VGS, Gate-to-Source Voltage (V)
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
A
Fig 14a. Unclamped Inductive Test Circuit
VDS
VGS
RG
RD
Fig 14b. Unclamped Inductive Waveforms
VDS
90%
D.U.T.
+
-VDD
V10V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
Fig 15a. Switching Time Test Circuit
www.irf.com
I AS
0.01Ω
tp
10%
VGS
td(on)
tr
td(off)
tf
Fig 15b. Switching Time Waveforms
5
IRFH5300PbF
D.U.T
Driver Gate Drive
ƒ
+
‚
-
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
V DD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
DUT
0
1K
S
VCC
Vgs(th)
Qgs1 Qgs2
Fig 17. Gate Charge Test Circuit
6
Qgd
Qgodr
Fig 18. Gate Charge Waveform
www.irf.com
IRFH5300PbF
PQFN 5x6 Outline "B" Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
PIN 1
IDENTIFIER
XXXX
XYWWX
XXXXX
PART NUMBER
(“4 or 5 digits”)
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
www.irf.com
7
IRFH5300PbF
PQFN Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Qualification information†
Qualification level
Moisture Sensitivity Level
RoHS compliant
†
††
†††
Indus trial
(per JE DE C JE S D47F
PQFN 5mm x 6mm
††
†††
guidelines )
MS L1
†††
(per JE DE C J-S T D-020D
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.337mH, RG = 25Ω, IAS = 50A.
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.
„ Rθ is measured at TJ of approximately 90°C.
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
† Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.9/2009
8
www.irf.com
Similar pages