SavantIC Semiconductor Product Specification BDX53/A/B/C Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON ·Complement to type BDX54/A/B/C APPLICATIONS ·Power linear and switching applications ·Hammer drivers,audio amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS BDX53 VCBO VCEO Collector-base voltage Collector-emitter voltage BDX53A BDX53B Open emitter Emitter-base voltage IC 60 80 BDX53C 100 BDX53 45 BDX53A BDX53B UNIT 45 Open base BDX53C VEBO VALUE 60 80 V V 100 Open collector 5 V Collector current-DC 8 A ICM Collector current-Pulse 12 A IB Base current 0.2 A PC Collector power dissipation 60 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX UNIT 2.08 /W SavantIC Semiconductor Product Specification BDX53/A/B/C Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BDX53 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 45 BDX53A 60 IC=0.1A, IB=0 V BDX53B 80 BDX53C 100 VCEsat Collector-emitter saturation voltage IC=3A ,IB=12mA 2.0 V VBE sat Base-emitter saturation voltage IC=3A ,IB=12mA 2.5 V 0.2 mA 0.5 mA 2.0 mA 2.5 V ICBO ICEO BDX53 VCB=45V, IE=0 BDX53A VCB=60V, IE=0 BDX53B VCB=80V, IE=0 BDX53C VCB=100V, IE=0 BDX53 VCE=22V, IB=0 BDX53A VCE=30V, IB=0 BDX53B VCE=40V, IB=0 BDX53C VCE=50V, IB=0 Collector cut-off current Collector cut-off current IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=3A ; VCE=3V VF-1 Forward diode voltage IF=3A 1.8 VF-2 Forward diode voltage IF=8A 2.5 2 750 V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BDX53/A/B/C