IXYS IXGH10N170A High voltage igbt Datasheet

IXGH 10N170A VCES
IXGT 10N170A IC25
VCE(sat)
tfi(typ)
High Voltage
IGBT
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
1700
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
10
A
IC90
TC = 90°C
5
A
ICM
TC = 25°C, 1 ms
20
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 22Ω
Clamped inductive load
tSC
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22Ω
10
PC
TC = 25°C
140
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
ICM = 20
@ 0.8 VCES
TJ
Md
Mounting torque (M3)
(TO-247)
Weight
TO-247
TO-268
Symbol
Test Conditions
BVCES
VGE(th)
IC
IC
ICES
VCE = 0.8 • VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
© 2003 IXYS All rights reserved
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
= 250 µA, VGE = 0 V
= 250 µA, VCE = VGE
= IC90, VGE = 15 V
°C
6
4
1700
3.0
Note 1
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
4.5
5.2
G
E
C (TAB)
TO-247 AD (IXGH)
G
µs
300
TO-268 (IXGT)
A
1.13/10Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
= 1700 V
=
10 A
= 6.0 V
=
35 ns
5.0
V
V
25
500
µA
µA
±100
nA
6.0
V
V
G = Gate,
E = Emitter,
C (TAB)
C
E
C = Collector,
TAB = Collector
Features
z
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
z
High current handling capability
z
Very high frequency
z
MOS Gate turn-on
- drive simplicity
Rugged NPT structure
Molding epoxies meet UL 94 V-0
flammability classification
z
z
Applications
z
Pulser circuits
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
Advantages
z
High power density
z
Suitable for surface mounting
z
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS98991B(11/03)
IXGH
IXGT
Symbol
Test Conditions
gfs
IC = IC25; VCE = 20 V
Note 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
3
5
S
650
pF
40
pF
22
pF
29
nC
5
nC
QGC
10
nC
td(on)
46
ns
Cies
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
QG
QGE
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
tri
57
Inductive load, TJ = 25°°C
td(off)
190
IC = IC25, VGE = 15 V
tfi
RG = 22 Ω, VCE = 0.5 VCES
Eoff
Inductive load, TJ = 125°°C
Eon
td(off)
IC = IC25, VGE = 15 V
RG = 22 Ω, VCE = 0.5 VCES
tfi
ns
0.38
0.8 mJ
48
ns
59
ns
1.2
200
mJ
ns
40
ns
0.6
mJ
0.25
0.89 K/W
K/W
Eoff
RthJC
RthCK
(TO-247)
Notes: 1.
2.
ns
35
td(on)
tri
ns
360
10N170A
10N170A
TO-247 AD Outline
∅P
e
Dim.
Millimeter
Min.
Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Dim.
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
Millimeter
Min.
Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
L2
L3
L4
1.00
1.15
0.25 BSC
3.80
4.10
.039 .045
.010 BSC
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343 6,583,505
IXGH
IXGT
Fig. 1. Output Characteristics
@ 25 Deg. C
10
VG E = 17V
35
9V
15V
30
7
6
I C - Amperes
I C - Amperes
8
Fig. 2. Extended Output Characteristics
@ 25 deg. C
40
VG E = 17V
15V
13V
11V
9
7V
5
4
3
13V
25
11V
20
9V
15
10
2
5
1
0
7V
0
1
2
3
4
5
6
7
8
9
0
V CE - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
10
15
V CE - Volts
20
25
30
2.6
VG E = 17V
15V
13V
11V
8
7
2.4
9V
6
VC E (sat) - Normalized
9
I C - Amperes
5
Fig. 4. Temperature Dependence of V CE(sat)
10
7V
5
4
3
2
VG E = 15V
2.2
I C = 10A
2
1.8
1.6
I C = 5A
1.4
1.2
I C = 2.5A
1
1
0.8
0
1
2
3
4
5
6
7
8
9
-50
10
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
V CE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emiiter voltage
Fig. 6. Input Admittance
15
12
11
12.5
T J = 25º C
10
8
I C - Amperes
9
VCE - Volts
10N170A
10N170A
I C = 10A
7
6
10
7.5
5
T J = 125º C
5A
5
25º C
2.5
-40º C
4
2.5A
3
0
5
6
7
8
9
10
11
V GE - Volts
© 2003 IXYS All rights reserved
12
13
14
15
4
5
6
7
V GE - Volts
8
9
IXGH
IXGT
Fig. 8. Dependence of Eoff on RG
Fig. 7. Transconductance
8
1.3
T J = -40º C
7
1.1
125º C
E off - milliJoules
g f s - Siemens
6
5
4
3
2
I C = 20A
1
0.9
I C = 10A
0.8
0.7
0.6
1
I C = 5A
0.5
0
0.4
0
2.5
5
7.5
10
12.5
15
0
20
40
60
80
100
120
I C - Amperes
R G - Ohms
Fig. 9. Dependence of Eoff on IC
Fig. 10. Dependence of Eoff on Temperature
140
1.6
1.4
T J = 125º C
VG E = 15V
VC E = 850V
1.3
1.2
1.1
E off - milliJoules
E off - milliJoules
TJ = 125º C
VG E = 15V
VC E = 1360V
1.2
25º C
1
0.9
R G = 120 Ohms
0.8
0.7
1.4
So lid lines - R G = 120 Ohms
Dashed lines - R G = 20 Ohms
1.2
VG E = 15V
VC E = 850V
I C = 20A
1
0.8
0.6
R G = 20 Ohms
0.6
I C = 10A
0.4
0.5
I C = 5A
0.4
0.2
4
6
8
10
12
14
16
18
20
0
25
50
75
100
125
150
TJ - Degrees Centigrade
I C - Amperes
Fig. 11. Gate Charge
Fig. 12. Capacitance
1000
15
VC E = 600V
I C = 5A
I G = 10mA
C ies
Capacitance - pF
12
VG E - Volts
10N170A
10N170A
9
6
f = 1M Hz
100
C oes
3
C res
0
10
0
5
10
15
20
25
30
Q G - nanoCoulombs
0
5
10
15
20
25
30
35
40
V CE - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343 6,583,505
IXGH
IXGT
10N170A
10N170A
Fig. 13. M axim um T ransient T herm al R esistance
1
0 .9
R (th) J C - (ºC/W)
0 .8
0 .7
0 .6
0 .5
0 .4
0 .3
0 .2
1
10
10 0
Puls e W idth - millis ec onds
© 2003 IXYS All rights reserved
10 0 0
Similar pages