SeCoS BC848BW Npn plastic encapsulate transistor Datasheet

BC846AW,BW
BC847AW, BW, CW
BC848AW, BW, CW
Elektronische Bauelemente
NPN Plastic Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES


Ideally suited for automatic insertion
For Switching and AF Amplifier Applications
Base
Emitter
Collector
SOT-323
A
Collector
3

MARKING
BC846AW=1A;BC846BW=1B;
BC847AW=1E;BC847BW=1F;BC847CW=1G;
BC848AW=1J;BC848BW=1K;BC848CW=1L
L
3
C B
Top View
1
1

K
2
E
2
Base
D

Emitter
F
G
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
H
J
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
0.650 TYP.
REF.
G
H
J
K
L
ABSOLUTE MAXIMUM RATINGS ( TA = 25°C unless otherwise noted )
PARAMETER
SYMBOL
BC846W
Collector to Base Voltage
Collector to Emitter Voltage
BC847W
VCBO
30
BC846W
65
VCEO
BC847W
Junction, Storage Temperature
24-Mar-2010 Rev. A
V
6
VEBO
6
IC
0.1
A
PC
150
mW
TJ, TSTG
150, -55 ~ 150
℃
BC848W
Collector Power Dissipation
45
V
30
BC846W
Collector Current - Continuous
50
BC848W
BC847W
UNIT
80
BC848W
Emitter to Base Voltage
RATINGS
V
5
Page 1 of 4
BC846AW,BW
BC847AW, BW, CW
BC848AW, BW, CW
Elektronische Bauelemente
NPN Plastic Encapsulate Transistor
ELECTRICAL CHARACTERISTICS ( Tamb = 25°C unless otherwise specified )
PARAMETER
SYMBOL
BC846W
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
BC847W
MIN.
VCBO
50
30
BC846W
65
VCEO
45
BC848W
30
BC846W
6
BC847W
VEBO
BC848W
Collector Cutoff Current
Base to Emitter Saturation Voltage
Base to Emitter Voltage
6
VCE(sat)
VBE(sat)
VBE(on)
DC Current Gain
hFE(1)
-
-
V
IC = 10 mA, IB = 0
-
-
V
IE = 1 μA, IC = 0
nA
-
15
-
0.25
-
-
0.6
-
0.7
-
-
0.9
-
580
660
700
-
770
-
150
BC846BW,BC847BW,BC848BW
BC847CW,BC848CW
24-Mar-2010 Rev. A
V
mV
IC = 100mA, IB = 5 mA
IC = 10mA, IB = 0.5 mA
IC = 100mA, IB = 5 mA
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 10 mA
-
VCE = 5 V, IC = 10 μA
hFE(2)
200
220
-
420
450
VCE = 5 V, IC = 2 mA
800
fT
100
-
-
MHz
VCE = 5 V, IC = 10 mA, f = 100MHz
COb
-
-
4.5
pF
VCB = 10 V, f=1MHz
-
BC846AW,BC847AW,BC848AW
Noise Figure
V
VCB = 30 V
IC = 10mA, IB = 0.5 mA
270
110
BC847CW,BC848CW
Collector Output Capacitance
IC = 10 uA, IE = 0
-
BC847CW,BC848CW
Transition Frequency
V
90
BC846AW,BC847AW,BC848AW
BC846BW,BC847BW,BC848BW
-
-
BC846AW,BC847AW,BC848AW
BC846BW,BC847BW,BC848BW
-
5
ICBO
Collector to Emitter Saturation Voltage
TEST CONDITIONS
80
BC848W
BC847W
TYP. MAX. UNIT
NF
-
-
10
4
VCE= 5 V, IC= 0.2 mA,
dB
f= 1KHz, RS= 2 KΩ,
BW= 200Hz
Page 2 of 4
Elektronische Bauelemente
BC846AW,BW
BC847AW, BW, CW
BC848AW, BW, CW
NPN Plastic Encapsulate Transistor
CHARACTERISTIC CURVES
24-Mar-2010 Rev. A
Page 3 of 4
Elektronische Bauelemente
BC846AW,BW
BC847AW, BW, CW
BC848AW, BW, CW
NPN Plastic Encapsulate Transistor
CHARACTERISTIC CURVES
24-Mar-2010 Rev. A
Page 4 of 4
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