Seme LAB D5006UK Rohs compliant metal gate rf silicon fet Datasheet

TetraFET
D5006UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
B
C
A
1
E
2
3
G
F
6
5
4
J
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
150W – 50V – 175MHz
SINGLE ENDED
D
H
K
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
Q
M
N
O
P
• SUITABLE FOR BROAD BAND APPLICATIONS
DV
PIN 1
SOURCE
PIN 2
DRAIN
PIN 3
SOURCE
PIN 4
SOURCE
PIN 5
GATE
PIN 6
SOURCE
DIM
A
B
C
D
E
F
G
H
J
K
M
N
O
P
Q
mm
9.09
19.3
45°
5.71
1.65R
10.16
20.32
19.30
1.52R
10.77
22.86
3.17
0.13
4.19
6.35
Tol.
0.13
0.13
5°
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.13
0.13
0.02
0.13
REF
Inches
0.358
0.760
45°
0.225
0.065R
0.400
0.800
0.760
0.060R
0.424
0.900
0.125
0.005
0.165
0.250
Tol.
0.005
0.005
5°
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.005
0.005
0.001
0.005
REF
• LOW Crss
• SIMPLE BIAS CIRCUITS
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
220W
125V
±20V
21A
–65 to 150°C
200°C
Document Number 3592
Issue 5
D5006UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
Drain–Source
Typ.
Max. Unit
V
VGS = 0
ID = 100mA
VDS = 50V
VGS = 0
7
mA
VGS = 20V
VDS = 0
1
μA
VGS(th) Gate Threshold Voltage*
ID = 10mA
VDS = VGS
7
V
gfs
Forward Transconductance*
VDS = 10V
ID = 3.5A
GPS
Common Source Power Gain
PO = 150W
η
Drain Efficiency
VDS = 50V
VSWR Load Mismatch Tolerance
f = 175MHz
IDSS
IGSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
IDQ = 0.7A
125
1
5.6
S
13
dB
40
%
20:1
—
Ciss
Input Capacitance
VDS = 50V
VGS = –5V f = 1MHz
420
pF
Coss
Output Capacitance
VDS = 50V
VGS = 0
f = 1MHz
175
pF
Crss
Reverse Transfer Capacitance
VDS = 50V
VGS = 0
f = 1MHz
10.5
pF
* Pulse Test:
Pulse Duration = 300 μs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Semelab plc.
Thermal Resistance Junction – Case
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
Max. 0.8°C / W
Document Number 3592
Issue 5
Similar pages