NTE NTE22 Silicon npn transistor af po, general purpose amp, driver Datasheet

NTE22
Silicon NPN Transistor
AF PO, General Purpose Amp, Driver
Features:
D High Breakdown Voltage: VCEO = 80V
D Large IC Capacity: IC = 1A DC
D Good hFE Linearity
D Low Collector Saturation Voltage
Applications:
D Medium Power Output Stages
D High–Voltage Drivers
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Pulse (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW
Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +135°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Note 1. PW = 20ms, Duty Cycle = 1/2
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA
80
–
–
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 50µA
100
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 50µA
5
–
–
V
Collector Cutoff Current
ICBO
VCB = 80V
–
–
1
µA
Emitter Cutoff Current
IEBO
VEB = 4V
–
–
1
µA
DC Current Gain
hFE
VCE = 3V, IC = 50mA
120
–
270
VCE(sat)
IC = 500A, IB = 50mA
–
0.15
0.4
V
Transition Frequency
fT
VCE = 10V, IC = 50mA
–
100
–
MHz
Output Capacitance
Cob
VCB = 10V, f = 1MHz
–
20
–
pF
Collector Saturation Voltage
.102 (2.6)
.280 (7.11)
E
.100 (2.54)
.051 (1.29)
C
B
.185 (4.7)
.138 (3.5)
.022 (0.55)
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