Hanbit HMF51232M4Y-55 Flash-rom module 2mbyte (512k x 32-bit) Datasheet

HANBit
HMF51232M4Y
FLASH-ROM MODULE 2MByte (512K x 32-Bit)
Part No. HMF51232M4Y
GENERAL DESCRIPTION
The HMF51232M4Y is a high-speed flash read only memory (FROM) module containing 524,288 words organized in a x32bit
configuration. The module consists of four 512Kx 8 FROM mounted on a 72-pin, single-sided, FR4-printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is
similar to reading from 12.0V flash or EPROM devices.
Four chip enable inputs, (/CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) are used to enable the module’s 4 bytes independently.
Output enable (/OE) and write enable (/WE) can set the memory input and output.
When FROM module is disable condition, the module is becoming power standby mode, system designer can get low-power
design.
All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL-compatible.
PIN ASSIGNMENT
FEATURES
w Access time : 55,70, 90 and 120ns
PIN
SYMBOL
PIN
SYMBOL
PIN
SYMBOL
w High-density 2MByte design
1
Vss
25
Vcc
49
DQ17
w High-reliability, low-power design
2
A3
26
DQ8
50
DQ18
w Single + 5V ± 0.5V power supply
3
A2
27
DQ9
51
DQ22
w Easy memory expansion
4
A1
28
DQ10
52
DQ21
wAll inputs and outputs are TTL-
5
A0
29
/CE_LM2
53
DQ20
compatible
6
Vcc
30
Vcc
54
DQ19
w FR4-PCB design
7
A11
31
NC
55
Vcc
w Low profile 72-pin SIMM
8
/OE
32
DQ15
56
A15
w Minimum 1,000,000 write/erase cycle
9
A10
33
DQ14
57
A12
w Sector erases architecture
10
Vcc
34
DQ13
58
A7
w Sector group protection
11
/CE_LL2
35
DQ12
59
Vcc
w Temporary sector group unprotection
12
NC
36
DQ11
60
A8
13
DQ7
37
A18
61
A9
14
DQ0
38
A16
62
DQ24
15
DQ1
39
Vss
63
DQ25
16
DQ2
40
A6
64
DQ26
17
DQ6
41
Vcc
65
/CE_UU2
18
DQ5
42
A5
66
NC
19
DQ4
43
A4
67
DQ31
20
DQ3
44
Vcc
68
DQ30
21
/WE
45
/CE_UM2
69
DQ29
22
A17
46
NC
70
DQ28
23
A14
47
DQ23
71
DQ27
24
A13
48
DQ16
72
Vss
OPTIONS
MARKING
w Timing
55ns access
- 55
70ns access
- 70
90ns access
- 90
120ns access
- 120
w Package
72-pin SIMM
M
72-PIN SIMM
TOP VIEW
FUNCTIONAL BLOCK DIAGRAM
URL: www.hbe.co.kr
REV.02(August,2002)
1
HANBit Electronics Co., Ltd.
HANBit
HMF51232M4Y
DQ0 - DQ31
A0 - A18
32
19
A0-18
DQ 0-7
/WE
U1
/OE
/CE
/CE_LL2
A0-18
/WE
DQ 8-15
U2
/OE
/CE
/CE_LM2
A0-18
/WE
DQ16-23
U3
/OE
/CE
/CE_UM2
A0-18
/WE
/WE
/OE
/OE
DQ24-31
U4
/CE
/CE_UU2
TRUTH TABLE
MODE
/OE
/CE
/WE
DQ
POWER
STANDBY
X
H
X
HIGH-Z
STANDBY
NOT SELECTED
H
L
H
HIGH-Z
ACTIVE
READ
L
L
H
Dout
ACTIVE
WRITE
X
L
L
Din
ACTIVE
Note : X means don't care
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REV.02(August,2002)
2
HANBit Electronics Co., Ltd.
HANBit
HMF51232M4Y
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
VIN,OUT
-2.0V to +7.0V
Voltage with respect to ground Vcc
VCC
-2.0V to +7.0V
Storage Temperature
TSTG
-65oC to +125oC
Voltage with respect to ground all other pins
Operating Temperature
TA
-55oC to +125oC
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
MIN
Vcc for ±5% device Supply Voltages
VCC
4.75V
5.25V
Vcc for ± 10% device Supply Voltages
Vcc
4.5V
5.5V
Ground
VSS
0
PARAMETER
TYP.
MAX
0
0
DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V )
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
MAX
UNITS
Input Leakage Current
Vcc=Vcc max, VIN= GND to Vcc
IL1
±1.0
µA
Output Leakage Current
Vcc=Vcc max, VOUT= GND to Vcc
IL0
±1.0
µA
Output High Voltage
IOH = -2.5mA, Vcc = Vcc min
VOH
Output Low Voltage
IOL = 12mA, Vcc =Vcc min
VOL
Vcc Active Current for Read(1)
/CE = VIL, /OE=VIH,
ICC1
/CE = VIL, /OE=VIH
/CE= VIH
2.4
V
0.45
V
80
120
mA
ICC2
120
160
mA
ICC3
4
20
mA
VLKO
3.2
4.2
V
Vcc Active Current for Program
or Erase(2)
Vcc Standby Current
Low Vcc Lock-Out Voltage
Notes:
1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH.
2. Icc active while embedded algorithm (program or erase) is in progress
3. Maximum Icc current specifications are tested with Vcc=Vcc max
URL: www.hbe.co.kr
REV.02(August,2002)
3
HANBit Electronics Co., Ltd.
HANBit
HMF51232M4Y
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
UNIT
MIN.
TYP.
COMMENTS
MAX.
Excludes 00H programming
Sector Erase Time
-
1
8
sec
prior to erasure
Excludes system-level
Byte Programming Time
-
7
300
us
overhead
Excludes system-level
Chip Programming Time
-
3.6
10.8
sec
overhead
CAPACITANCE
PARAMETER
PARAMETER
SYMBOL
CIN
TEST SETUP
TYP.
MAX
UNIT
VIN = 0
6
7.5
pF
VOUT = 0
8.5
12
pF
VIN = 0
7.5
9
pF
DESCRIPTION
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
Notes : Test conditions TA = 25o C, f=1.0 MHz.
TEST CONDITIONS
TEST CONDITION
-55
Output load
ALL OTHERS
UNIT
1 TTL gate
Output load Capacitance, CL
30
100
pF
Input Rise and Fall Times
5
20
ns
Input Pulse Levels
0~3
0.45~2.4
V
Input timing measurement reference levels
1.5
0.8
V
Output timing measurement reference levels
1.5
2.0
V
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REV.02(August,2002)
4
HANBit Electronics Co., Ltd.
HANBit
HMF51232M4Y
AC CHARACTERISTICS
u Read Only Operations Characteristics
PARAMETER
SYMBOLS
tRC
-55
TEST
-70
-90
-120
UNIT
DESCRIPTION
SETUP
MIN
Read Cycle Time
MAX
MIN
55
tACC
/CE = VIL
MAX
MIN
70
55
MAX
MIN
90
MAX
120
ns
70
Address to Output Delay
90
120
ns
/OE = VIL
tCE
Chip Enable to Output Delay
tOE
Chip Enable to Output Delay
tDF
Chip Enable to Output High-Z
tDF
Output Enable to Output High-Z
/OE = VIL
55
70
90
120
ns
30
30
35
50
ns
0
0
18
0
20
Output Hold Time From
0
ns
20
35
ns
0
ns
0
Addresses,
0
tQH
0
/CE or /OE, Whichever Occurs
First
5.0V
2.7kΩ
IN3064
or Equivalent
Device
Under
Test
CL
6.2kΩ
Diodes = IN3064
or Equivalent
Note : CL = 100pF including jig capacitance
u Erase/Program Operations
PARAMETER
-55
-70
-90
-120
DESCRIPTION
SYMBOLS
UNIT
MIN
TYP
MAX
MIN
90
MIN
MAX
Write Cycle Time
tAS
Address Setup Time
tAH
Address Hold Time
40
45
45
50
ns
tDS
Data Setup Time
25
30
45
50
ns
REV.02(August,2002)
70
MAX
tWC
URL: www.hbe.co.kr
55
MIN
120
0
5
ns
ns
HANBit Electronics Co., Ltd.
HANBit
HMF51232M4Y
tDH
Data Hold Time
0
ns
tOES
Output Enable Setup Time
0
ns
Read Recover Time Before Write
0
ns
tCS
/CE Setup Time
0
ns
tCH
/CE Hold Time
0
ns
tWP
Write Pulse Width
tWPH
Write Pulse Width High
20
ns
tWHWH1
Byte Programming Operation
7
µs
tWHWH2
Sector Erase Operation (Note1)
1
sec
Vcc set up time
50
µs
tGHWL
tVCS
30
35
45
50
ns
Notes :
1. This does not include the preprogramming time
2. This timing is only for Sector Protect operations
u Erase/Program Operations
Alternate /CE Controlled Writes
PARAMETER
-55
-70
-90
-120
DESCRIPTION
SYMBOLS
UNIT
MIN
TYP
MIN
55
ns
70
MAX
MIN
MIN
MAX
tWC
Write Cycle Time
tAS
Address Setup Time
tAH
Address Hold Time
40
ns
45
45
50
ns
tDS
Data Setup Time
25
ns
30
45
50
ns
tDH
Data Hold Time
0
ns
Read Recover Time Before Write
0
ns
tWS
/WE Setup Time
0
ns
tWH
/WE Hold Time
0
ns
tCP
/CE Pulse Width
tCPH
/CE Pulse Width High
20
ns
tWHWH1
Byte Programming Operation
7
µs
tWHWH2
Sector Erase Operation (Note)
1
sec
tGHEL
90
MAX
120
ns
0
30
ns
35
ns
45
50
ns
Notes : This does not include the preprogramming time.
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REV.02(August,2002)
6
HANBit Electronics Co., Ltd.
HANBit
HMF51232M4Y
u READ OPERATIONS TIMING
u RESET TIMING
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REV.02(August,2002)
7
HANBit Electronics Co., Ltd.
HANBit
HMF51232M4Y
u PROGRAM OPERATIONS TIMING
u CHIP/SECTOR ERASE OPERATION TIMINGS
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REV.02(August,2002)
8
HANBit Electronics Co., Ltd.
HANBit
HMF51232M4Y
u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
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REV.02(August,2002)
9
HANBit Electronics Co., Ltd.
HANBit
HMF51232M4Y
u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
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REV.02(August,2002)
10
HANBit Electronics Co., Ltd.
HANBit
HMF51232M4Y
PACKAGE DIMENSIONS
2.54 mm
MIN
0.25 mm MAX
1.27±0.08mm
Gold: 1.04±0.10 mm
Solder: 0.914±0.10 mm
1.27
(Solder & Gold Plating)
ODERING INFORMATION
Part Number
Density
Org.
Package
HMF51232M4Y-55
2MByte
512K×32bit
72 Pin-SIMM
HMF51232M4Y-70
2MByte
512K×32bit
HMF51232M4Y-90
2MByte
HMF51232M4Y-120
2MByte
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REV.02(August,2002)
Component
Vcc
SPEED
4EA
5.0V
55ns
72 Pin-SIMM
4EA
5.0V
70ns
512K×32bit
72 Pin-SIMM
4EA
5.0V
90ns
512K×32bit
72 Pin-SIMM
4EA
5.0V
120ns
11
Number
HANBit Electronics Co., Ltd.
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