Infineon BF799 Npn silicon rf transistor Datasheet

BF799
NPN Silicon RF Transistor
3
For linear broadband amplifier
application up to 500 MHz
SAW filter driver in TV tuners
2
1
Type
Marking
BF799
LKs
Pin Configuration
1=B
2=E
VPS05161
Package
3=C
SOT23
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
20
Collector-emitter voltage
VCES
30
Collector-base voltage
VCBO
30
Emitter-base voltage
VEBO
3
Collector current
IC
35
Peak collector current,
ICM
50
Peak base current
IBM
15
Total power dissipation
Ptot
280
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
V
mA
TS 69 °C 1)
-65 ... 150
Thermal Resistance
Junction - soldering point2)
RthJS
290
K/W
1T is measured on the collector lead at the soldering point to the pcb
S
2For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Apr-15-2003
BF799
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)CEO
20
-
-
V(BR)CBO
30
-
-
V(BR)EBO
3
-
-
ICBO
-
-
100
DC characteristics
Collector-emitter breakdown voltage
V
IC = 1 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Base-emitter breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
nA
VCB = 20 V, IE = 0
DC current gain
-
hFE
IC = 5 mA, VCE = 10 V
35
95
-
IC = 20 mA, VCE = 10 V
40
100
250
VCEsat
-
0.1
0.3
VBEsat
-
-
0.95
Collector-emitter saturation voltage
V
IC = 20 mA, IB = 2 mA
Base-emitter saturation voltage
IC = 20 mA, IB = 2 mA
AC characteristics
MHz
fT
Transition frequency
IC = 5 mA, VCE = 10 V, f = 100 MHz
-
800
-
IC = 20 mA, VCE = 8 V, f = 100 MHz
-
1100
-
Cob
-
0.96
-
Ccb
-
0.7
-
Cce
-
0.28
-
F
-
3
-
dB
g22e
-
60
-
S
Output capacitance
pF
VCB = 10 V, IE = 0 mA, f = 1 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Noise figure
IC = 5 mA, VCE = 10 V, f = 100 MHz,
ZS = 50 Output conductance
IC = 20 mA, VCE = 10 V, f = 35 MHz
2
Apr-15-2003
BF799
Total power dissipation Ptot = f(TS)
320
mW
Ptot
240
200
160
120
80
40
0
0
15
30
45
60
75
90 105 120
°C 150
TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load
Ptotmax/PtotDC = f (tp )
10 3
10 3
Ptotmax / PtotDC
RthJS
K/W
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
10 0 -7
10
10
-6
10
-5
10
-4
10
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
-3
10
-2
s
tp
10
10 0 -6
10
0
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
3
Apr-15-2003
BF799
Transition frequency fT = f (IC)
Collector-base capacitance Ccb = f (VCB )
f = 100MHz
f = 1 MHz
1200
fT
BF 799
EHT07116
MHz
1.5
Ccb
1000
BF 799
EHT07117
pF
VCE = 5 V
1.0
800
600
2V
0.5
400
200
0
0
10
20
30
0
40 mA 50
ΙC
0
10
V
20
VCB
4
Apr-15-2003
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