Dynex DSF8025SE Fast recovery diode Datasheet

DSF8025SE / DSF8025SG
DSF8025SE / DSF8025SG
Fast Recovery Diode
Advance Information
Replaces March 2000 version, DS4146-5.1
FDS4146-6.0 January 2004
KEY PARAMETERS
VRRM
2500V
IF(AV)
650A
IFSM
7500A
Qr
540µC
trr
5.0µs
APPLICATIONS
■
Induction Heating
■
A.C. Motor Drives
■
Inverters And Choppers
■
Welding
■
High Frequency Rectification
■
UPS
FEATURES
■
Double side cooling
■
High surge capability
■
Low recovery charge
VOLTAGE RATINGS
Type Number
DSF8025SE25
DSF8025SG25
DSF8025SE24
DSF8025SG24
DSF8025SE23
DSF8025SG23
DSF8025SE22
DSF8025SG22
DSF8025SE21
DSF8025SG21
DSF8025SE20
DSF8025SG20
Repetitive Peak
Reverse Voltage
VRRM
V
2500
Conditions
VRSM = VRRM + 100V
Package outline type code: E
Package outline type code: G
2400
(See package details for further information)
2300
Fig. 1 Package outlines
2200
2100
2000
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DSF8025SE23 for 2300V product in an 'E' outline,
DSF8025SG23 for 2300V product in an 'G' outline,
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
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DSF8025SE / DSF8025SG
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
650
A
Double Side Cooled
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
IF(RMS)
RMS value
Tcase = 65oC
1020
A
Continuous (direct) forward current
Tcase = 65oC
785
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
385
A
IF(RMS)
RMS value
Tcase = 65oC
604
A
Continuous (direct) forward current
Tcase = 65oC
465
A
IF
SURGE RATINGS
Symbol
IFSM
I2t
IFSM
I2t
Parameter
Conditions
Surge (non-repetitive) forward current
Max.
Units
7.5
kA
281 x 103
A2s
6.0
kA
180 x 103
A2s
10ms half sine; with 0% VRRM, Tj = 150oC
I2t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% VRRM, Tj = 150oC
I2t for fusing
THERMAL AND MECHANICAL DATA
Parameter
Symbol
Conditions
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
Min.
Max.
Units
dc
-
0.047
o
Anode dc
-
0.094
o
Cathode dc
-
0.094
o
Double side
-
0.018
o
Single side
-
0.036
o
-
150
o
o
C/W
C/W
Single side cooled
Rth(c-h)
Thermal resistance - case to heatsink
Clamping force 8.0kN
with mounting compound
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-55
175
Clamping force
7.0
9.0
-
Forward (conducting)
C/W
C/W
C/W
C
C
kN
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DSF8025SE / DSF8025SG
CHARACTERISTICS
Symbol
Conditions
Parameter
Typ.
Max.
Units
VFM
Forward voltage
At 1000A peak, Tcase = 25oC
-
2.3
V
IRM
Peak reverse current
At VRRM, Tcase = 150oC
-
50
mA
trr
Reverse recovery time
-
5.0
µs
Recovered charge (50% chord)
IF = 1000A, diRR/dt = 100A/µs
-
540
µC
IRR
Reverse recovery current
Tcase = 150oC, VR = 100V
-
235
A
K
Soft factor
1.8
-
-
QRA1
VTO
Threshold voltage
At Tvj = 150oC
-
1.48
V
rT
Slope resistance
At Tvj = 150oC
-
0.8
mΩ
Peak forward recovery voltage
di/dt = 1000A/µs, Tj = 125oC
70
-
V
VFRP
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2)
dIR/dt
t1
t2
k = t1/t2
τ
0.5x IRR
IRR
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DSF8025SE / DSF8025SG
CURVES
3500
500
Measured under pulse conditions
Measured under pulse conditions
Tj = 25˚C
Tj = 150˚C
Tj = 25˚C
Tj = 150˚C
3000
Instantaneous forward current IF - (A)
Instantaneous forward current IF - (A)
400
2500
300
2000
200
1500
100
1000
500
0
1.0
2.0
3.0
Instantaneous forward voltage VF - (V)
0
1.00
4.0
Fig.2 Maximum (limit) forward characteristics
1.25
1.50
1.75
Instantaneous forward voltage VF - (V)
Fig.3 Maximum (limit) forward characteristics
250
10000
IFM
Current
waveform
QRA1
VFRP
tp = 1ms
dIR/dt
Reverse recovered charge, Qr - (µC)
Transient forward votage, VFR - (V)
δy
di = δy
dt δx
δx
0.5x IRR
IRR
1000
Tj = 125˚C limit
100
Tj = 25˚C limit
IF = 2000A
IF = 1000A
50
0
0
Conditions:
Tj = 150˚C,
VR = 100V
Voltage
waveform
200
150
2.00
IF = 200A
500
1000
1500
Rate of rise of forward current, dIF/dt - (A/µs)
Fig.5 Transient forward voltage vs rate of rise of
forward current
2000
100
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig.6 Recovered charge
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DSF8025SE / DSF8025SG
1000
0.1
Conditions:
Tj = 150˚C,
VR = 100V
Anode side
cooled
Transient thermal impedance, Zth(j-c) - (˚C/W)
A
B
Reverse recovery current, IRR - (A)
C
Double side
cooled
0.01
100
A: IF = 2000A
B: IF = 1000A
C: IF = 200A
10
1
10
Rate of rise of reverse current dIR/dt - (A/µs)
100
Fig.7 Typical reverse recovery current vs rate of fall of
forward current
0.001
0.001
0.01
0.1
Time - (s)
1.0
10
Fig.8 Maximum (limit) transient thermal impedance junction to case - (˚C/W)
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DSF8025SE / DSF8025SG
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep
(One in each electrode)
Cathode
Ø42max
Ø25nom.
15
14
Ø25nom.
Anode
Nominal weight: 82g
Clamping force: 8kN ±10%
Package maybe supplied with pins and/or tags.
Package outline type code: E
Fig. 9 Package details - E
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DSF8025SE / DSF8025SG
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Hole Ø3.6 x 2.0 deep (in both electrodes)
Cathode
Ø58.5 max
27.0
25.4
Ø34 nom
Ø34 nom
Anode
Nominal weight: 250g
Clamping force: 12kN ±10%
Package outine type code: G
Fig. 10 Package details - G
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always
be followed.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
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