HP MSA-0504 Cascadable silicon bipolar mmic amplifier Datasheet

Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0504
Features
• Cascadable 50 Ω Gain Block
• High Output Power:
18.0 dBm Typical P1 dB at
1.0␣ GHz
• Low Distortion:
29.0 dBm Typical IP3 at 1.0␣ GHz
• 7.0 dB Typical Gain at
1.0␣ GHz
• Low Cost Plastic Package
Description
The MSA-0504 is a high performance medium power silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) housed
in a low cost plastic package. This
MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in commercial systems.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R bias
VCC > 12 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9580E
OUT
MSA
Vd = 8.4 V
6-350
04A Plastic Package
MSA-0504 Absolute Maximum Ratings
Absolute Maximum[1]
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
135 mA
1.5 W
+25 dBm
200°C
–65 to 150°C
Electrical Specifications[1], TA = 25°C
Symbol
P1 dB
GP
Parameters and Test Conditions: Id = 80 mA, ZO = 50 Ω
Output Power at 1 dB Gain Compression
Power Gain (|S21| 2)
∆GP
Gain Flatness
f3 dB
3 dB Bandwidth[2]
VSWR
Thermal Resistance[2,4]:
θjc = 75°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 13.3 mW/°C for TC > 88°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Units
Min.
Typ.
f = 0.5 GHz
f = 1.0 GHz
dBm
dBm
16.0
19.0
18.0
f = 0.5 GHz
f = 1.0 GHz
dB
6.0
7.5
7.0
f = 0.1 to 1.5 GHz
dB
± 0.75
GHz
2.3
Input VSWR
f = 0.1 to 1.5 GHz
1.6:1
Output VSWR
f = 0.1 to 1.5 GHz
2.0:1
IP3
Third Order Intercept Point
f = 1.0 GHz
dBm
29.0
NF
50 Ω Noise Figure
f = 1.0 GHz
dB
6.5
tD
Group Delay
f = 1.0 GHz
psec
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
Max.
180
6.7
8.4
10.1
–16.0
Notes:
1. The recommended operating current range for this device is 60 to 100 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 0.1 GHz Gain (GP).
6-351
MSA-0504 Typical Scattering Parameters (TA = 25°C, Id = 80 mA)
S11
S21
S12
S22
Freq.
MHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
5
25
50
100
200
400
600
800
1000
1500
2000
2500
3000
.54
.24
.18
.14
.14
.14
.14
.15
.17
.23
.33
.42
.49
–43
–112
–142
–156
–168
–174
–175
–174
–174
–179
171
156
146
14.7
9.3
8.1
7.8
7.6
7.5
7.4
7.2
7.0
6.4
5.5
4.3
3.2
5.43
2.92
2.54
2.45
2.40
2.37
2.34
2.29
2.24
2.09
1.88
1.64
1.44
160
155
161
166
163
150
137
124
111
80
51
27
6
–18.4
–13.8
–13.7
–13.7
–13.7
–13.7
–13.6
–13.5
–13.6
–13.3
–12.8
–13.0
–12.8
.120
.204
.206
.207
.206
.206
.208
.211
.209
.216
.230
.224
.230
37
12
3
3
1
1
–1
–1
–3
–4
–10
–12
–11
.63
.24
.16
.13
.13
.16
.20
.25
.29
.37
.48
.51
.55
–39
–101
–125
–137
–146
–143
–144
–148
–154
–168
178
165
157
0.60
0.99
1.17
1.18
1.20
1.19
1.18
1.15
1.14
1.06
0.91
0.90
0.92
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
10
6:1
120
TC = +85°C
TC = +25°C
8
5:1
TC = –25°C
0.1 GHz
0.5 GHz
4:1
Vd (V)
6
VSWR
GAIN (dB)
90
3:1
4
60
1.0 GHz
1.5 GHz
2.0 GHz
2
Output
30
2:1
Input
1:1
0
8
10
12
14
16
18
20
22
0.1
24
0.2 0.3
0.5
1.0
2.0
0
4.0
0
3
FREQUENCY (GHz)
POWER OUT (dBm)
Figure 2. VSWR vs. Frequency,
Id = 80 mA.
Figure 1. Typical Gain vs. Power Out,
TA = 25°C, Id = 80 mA.
9
12
Figure 3. Device Current vs. Voltage.
14
22
6
I d (mA)
34
IP3 (dBm)
12
20
0.5 GHz
1.0 GHz
16
8
6
4
14
2
2.0 GHz
12
–25
0
+25
+85
TEMPERATURE (°C)
Figure 4. Output Power at 1 dB Gain
Compression, vs. Case Temperature,
Id = 80 mA.
30
IP3
26
22
P1 dB (dBm)
18
Gp (dB)
P1 dB (dBm)
10
0
.01
.05
0.1
0.5 1.0
FREQUENCY (GHz)
Figure 5. Gain vs. Frequency,
Id = 80 to 100 mA.
6-352
5.0
P1 dB
18
14
60
70
80
90
100
Id (mA)
Figure 6. Output Power at 1 dB Gain
Compression, Third Order Intercept
vs. Current, f = 1.0 GHz.
04A Plastic Package Dimensions
12.39 ± 0.76
(0.488 ± 0.030)
4
GROUND
0.76 (0.030)
DIA.
RF INPUT
RF OUTPUT
& BIAS
51
0.76 (0.030)
1
3
4.29
(0.169)
0.96 (0.038)
2
GROUND
0.51
(0.020)
NOTES:
(UNLESS OTHERWISE SPECIFIED)
1. DIMENSIONS ARE IN
MILLIMETERS (INCHES)
2. TOLERANCES
mm .XX = ± 0.13
in .XXX = ± 0.005
0.20 ± 0.050
(0.008 ± 0.002)
2.54 ± 0.25
(0.100 ± 0.010)
3.68
(0.145)
DIMENSIONS ARE IN MILLIMETERS (INCHES).
6-353
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