MPLUSE MP4T682533 Low current 8 volt, low noise high ft silicon transistor Datasheet

Low Current 8 Volt, Low Noise
High fT Silicon Transistor
Features
•
•
•
•
•
•
MP4T6825 Series
SOT-23
Low Current Operation
High fT (8 GHz)
Low Noise Figure with 1-5 mA Current
Low Phase Noise
Inexpensive
Available on Tape and Reel
Description
The MP4T6825 series of low current silicon bipolar
transistors provide low noise figure at a bias of 5-10 volts
and collector current of 1-5 mA. These inexpensive surface
mount transistors are useful for low noise amplifiers and
VCOs from VHF through 2.5 GHz.
SOT-143
The MP4T6825 series has high fT (8 GHz) and provides
approximately 1.5 dB noise figure with 1-3 mA current.
These transistors also have low phase noise when used in 510 volt low current VCOs through 3 GHz.
The MP4T6825 series are inexpensive transistors designed
for RF systems that require low current drain. This family of
transistors is available in chip (MP4T682500), SOT-23
(MP4T682533), SOT-143 (MP4T682539), and in the MicroX (MP4T682535) packages. Surface mount packages are
available on tape and reel.
Chip
Absulote Maximum Ratings at 25°C
Parameter
Absolute Maximum
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
Chips or Ceramic Packages
Plastic Packages
Power Dissipation1
1.
2.
20V
12 V
1.5 V
25 mA
+200°C2
-65°C to +200°C
-65°C to +150°C
See power derating curves.
Die or ceramic packages -150°C for plastic pacakges.
Specification Subject to Change Without Notice
M M-Pulse Microwave__________________________________________________________________________________
1
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
Low Current 8 Volt, Low Noise High fT Silicon Transistor
MP4T6825 Series
Electrical Specifications at 25°C
Symbol
fT
|S21E|2
NF
GTU (max)
MAG
P1dB
1.
Parameters
Gain Bandwidth
Product
Insertion Power
Gain
Noise Figure
Unilateral Gain
Maximum
Available Gain
Power Out at 1dB
Compression
RTH (J-A)
Thermal
Resistance
RTH (J-C)
Thermal
Resistance
Test
Condition
s
VCE = 8V
IC = 8 mA
VCE = 8V
IC = 8 mA
f = 1 GHz
f = 2 GHz
VCE = 8V
IC = 2 mA
f = 1 GHz
f = 2 GHz
VCE = 8V
IC = 8 mA
f = 1 GHz
f = 2 GHz
VCE = 8V
IC = 8 mA
f = 1 GHz
f = 2 GHz
VCE = 8V
IC = 15 mA
f = 1 GHz
f = 2 GHz
Junction/
Ambient
(Free Air)
Junction/
Case
Units
MP4T682500
Chip
MP4T682533
SOT-23
MP4T682535
Micro-X
MP4T682539
SOT-143
GHz
8 typ.
8 typ.
8 typ.
8 typ.
15 typ.
8 typ.
14 typ.
7 typ.
15 typ.
8 min.
14 typ.
7 typ.
1.8 max.
2.1 typ.
1.9 max.
2.2 typ.
1.8 max.
2.1 typ.
1.9 max.
2.2 typ.
17 typ.
11 typ.
16 typ.
10 typ.
17 typ.
11 typ.
16 typ.
10 typ.
18 typ.
13 typ.
17 typ.
12 typ.
18 typ.
13 typ.
17 typ.
12 typ.
15 typ.
13.5 typ.

14 typ.
12.5 typ.
650 typ.
14 typ.
12.5 typ.
500 typ.
15 typ.
13.5 typ.
625 typ.
1
200 typ.
200 typ.
200 typ.
dB
dB
dB
dB
dBm
°C
°C/W
70 max.
Junction to infinite heat sink.
Electrical Specifications at 25°C
Parameters
Collector Cut-off Current
Conditions
VCB = 8 V
IE = 0
VEB = 1 V
IC = 0
VCE = 8 V
IC = 5 mA
VCB = 8 V
IE = 0
f = 1 MHz
Emitter Cut-off Current
Forward Current Gain
Collector-Base
Junction Capacitance
Symbol
ICBO
Min.

Typ.

Max.
100
Units
nA
IEBO


1
µA
hFE
30
110
250

COB

0.25
0.40
pF
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
Low Current 8 Volt, Low Noise High fT Silicon Transistor
MP4T6825 Series
MP4T682535
Typical Scattering Parameters in the MIcro-X Package
VCE = 8 Volts, IC = 5 mA
Frequency
(MHz)
100
300
500
700
900
1500
1900
2500
2900
3300
3900
4500
4900
5500
S11E
Mag.
0.66
0.54
0.41
0.32
0.25
0.14
0.11
0.09
0.10
0.10
0.15
0.17
0.20
0.23
Angle
-15.7
-42.2
-61.2
-75.3
-86.9
-115.2
-142.6
143.9
128.4
108.0
92.4
79.4
69.5
58.8
S21E
Mag.
Angle
12.95
164.7
10.74
139.8
8.54
122.7
6.91
110.8
5.74
101.8
3.75
83.3
3.10
73.1
2.46
60.6
2.15
52.1
1.95
47.2
1.72
35.9
1.56
26.4
1.50
19.4
1.35
9.9
Mag.
0.01
0.02
0.03
0.04
0.05
0.08
0.10
0.12
0.14
0.15
0.17
0.20
0.21
0.23
S12E
Angle
86.0
71.9
66.4
64.7
63.8
62.0
59.1
55.6
53.0
51.1
46.7
45.0
42.2
37.9
S22E
Mag
0.97
0.88
0.79
0.73
0.69
0.63
0.61
0.58
0.56
0.56
0.53
0.53
0.52
0.50
Angle
-6.7
-16.8
-22.4
-25.9
-28.5
-35.5
-42.1
-50.5
-55.7
-61.2
-69.6
-79.6
-85.3
-92.9
VCE = 8 Volts, IC = 10 mA
Frequency
(MHz)
100
300
500
700
900
1500
1900
2500
2900
3300
3900
4500
4900
5500
S11E
Mag.
0.49
0.36
0.26
0.20
0.13
0.10
0.11
0.13
0.14
0.15
0.20
0.27
0.25
0.29
Angle
-22.0
-55.9
-78.4
-96.0
-125.3
-152.7
160.2
134.4
115.4
102.3
90.5
79.2
70.0
59.3
Mag.
17.06
12.71
9.37
7.28
4.93
3.76
3.07
2.43
2.12
1.92
1.70
1.53
1.48
1.32
S21E
Angle
160.4
131.5
114.5
103.5
88.8
78.7
69.0
57.3
49.2
44.2
33.3
23.4
16.4
6.8
Mag.
0.01
0.02
0.03
0.04
0.06
0.07
0.09
0.12
0.13
0.15
0.17
0.19
0.21
0.23
S12E
Angle
87.0
71.9
68.8
68.8
67.8
65.9
63.6
59.2
56.7
54.4
50.2
47.8
45.0
40.5
Mag
0.96
0.83
0.74
0.70
0.65
0.63
0.61
0.58
0.57
0.57
0.54
0.54
0.53
0.51
S22E
Mag.
17.16
10.98
7.55
5.70
4.56
2.88
2.34
1.86
1.63
1.49
1.33
S21E
Angle
154.3
122.3
106.7
97.0
89.8
74.1
64.4
53.1
45.1
39.5
29.7
Mag.
0.01
0.02
0.02
0.03
0.04
0.06
0.08
0.10
0.12
0.14
0.16
S12E
Angle
84.7
72.6
71.5
72.3
72.5
70.7
68.6
65.6
64.1
61.9
58.3
Mag
0.93
0.80
0.75
0.72
0.70
0.68
0.67
0.64
0.63
0.63
0.61
Angle
-7.9
-17.6
-21.5
-24.0
-28.6
-33.4
-40.0
-48.9
-54.4
-60.7
-69.3
-80.0
-86.0
-94.2
VCE = 8 Volts, IC = 20 mA
Frequency
(MHz)
100
300
500
700
900
1500
1900
2500
2900
3300
3900
S11E
Mag.
0.26
0.22
0.20
0.20
0.20
0.22
0.24
0.27
0.29
0.31
0.36
Angle
-48.6
-105.7
-136.0
-155.8
-169.8
161.3
146.4
126.6
115.1
104.4
92.3
S22E
Angle
-0.8
-14.8
-17.3
-19.8
-22.4
-31.3
-38.4
-48.2
-54.5
-61.5
-70.7
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
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576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
Low Current 8 Volt, Low Noise High fT Silicon Transistor
4500
4900
5500
0.39
0.42
0.46
79.7
70.1
57.6
1.20
1.15
1.02
18.5
11.5
2.9
0.19
0.20
0.23
MP4T6825 Series
55.5
52.7
48.2
0.59
0.58
0.56
-81.0
-88.0
-96.7
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
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576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
Low Current 8 Volt, Low Noise High fT Silicon Transistor
MP4T6825 Series
Typical Performance Curves (MP4T682535)
NOISE FIGURE and ASSOCIATED GAIN at
VCE = 8 V, 1 GHz vs COLLECTOR CURRENT
POWER DERATING CURVES
20
300
18
250
200
NOISE FIGURE (dB)
M P4T 682535
(M I C R O -X )
150
100
M P4T682533, 39
( S O T -2 3 , 1 4 3 ) F R E E A I R
50
16
ASSOCIATED GAIN (dB)
POWER DISSIPATION (mW)
M P 4 T 6 8 2 5 0 0 (C H I P ) O N I N F I N I T E H E A T S I N K
A SS O C I AT E D G A IN
14
12
10
8
6
4
N O IS E F I G U R E
2
0
1
0
0
20
40
60
80
100
120
140
160
180
10
200
1 00
C O L L E C T O R C U R R E N T (m A )
A M B I E N T T E M P E R A T U R E (C )
COLLECTOR-BASE CAPACITANCE (COB)
vs COLLECTOR-BASE VOLTAGE
GAIN vs FREQUENCY at VCE=8 V and IC =
5 mA
0 .3 5
COLL.-BASE CAPACITANCE (pF)
25
20
GAIN (dB)
GT U (M A X )
15
10
|S 21 E |2
5
0.3
0 .2 5
0.2
0 .1 5
0.1
0 .0 5
0
0
1
1
10
F R E Q U E N C Y (G H z)
1 00
GAIN vs COLLECTOR CURRENT at 1
GHz, VCE=8 V
GAIN BANDWIDTH PRODUCT (fT ) vs
COLLECTOR CURRENT at VCE=8 V
22
10
20
9
8
18
7
16
GAIN (dB)
GAIN BANDWIDTH (GHz)
10
C O L L E C T O R -B AS E V O L T A G E (V o lts )
6
5
4
14
|S 2 1 E |2
12
3
10
2
8
1
M AG
G T U (M AX )
6
0
1
10
10 0
1
10
C O L L E C T O R C U R R E N T (m A)
C O L L E C T O R C U R R E N T (m A)
Specification Subject to Change Without Notice
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576 Charcot Avemue, San Jose, California 95131
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10 0
Low Current 8 Volt, Low Noise High fT Silicon Transistor
MP4T6825 Series
Typical Performance Curves
(MP4T682535) Cont.
DC CURRENT GAIN (hFE) vs
COLLECTOR CURRENT at VCE = 8 V
1 20
DC CURRENT GAIN
1 10
1 00
90
80
70
60
50
1
10
10 0
C O L L E C T O R C U R R E N T (m A)
OUTPUT POWER at 1 dB COMPRESSION POINT vs
COLLECTOR CURRENT VCE=8V
16
f = 1 GHz
14
POUT - 1dB (dBm)
12
10
8
6
4
f = 2 GH z
2
0
0
5
10
15
20
25
C O L L E C T O R C U R R E N T (m A)
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
6
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
MP4T6825 Series
Low Current 8 Volt, Low Noise High fT Silicon Transistor
Case Styles
Chip - MP4T682500
MP4T682500
DIM.
A
B
C
D
BASE
INCHES (Nominal)
0.013
0.013
0.0016
0.0045
MM (Nominal)
0.35
0.35
0.040
0.11
DIM.
A
B
C
D
E
F
G
H
J
K
L
INCHES
MIN.
MAX.
0.044

0.004

0.040

0.013
0.020
0.003
0.006
0.110
0.119
0.047
0.056
0.037 typical
0.075 typical
0.103

0.024

MILLIMETERS
MIN.
MAX.
1.12

0.10

1.00

0.35
0.50
0.08
0.15
2.80
3.00
1.20
1.40
0.95 typical
1.90 typical
2.60

0.60

DIM.
M
N
GRADIENT
10° max. 1
2° . . . 30°
B
D THICKNESS
EMITTER
A
C 2 PLCS.
SOT-23 - MP4T682533
MP4T682533
F
N
A
D
C olle c tor
B
M
G
K
L
H
B a se
E
J
C
E m itte r
NOTE:
1. Applicable on all sides
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
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576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
Low Current 8 Volt, Low Noise High fT Silicon Transistor
MP4T6825 Series
Case Styles (Con’t)
Micro-X - MP4T682535
Emitter
F
4 PLCS.
E
H
Collector
Base
B
Emitter
A
C
D
G
SOT-143 - MP4T682539
B a se
E m itte r
G
P
A
J
B
N
H
L
M
E
D
F
C
K
C olle c tor E m itte r
Specification Subject to Change Without Notice
M-Pulse
Microwave_____________________________________________________________________________
_______
8
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
Low Current 8 Volt, Low Noise High fT Silicon Transistor
MP4T6825 Series
MP4T682535
INCHES
MIN.
MAX.
0.092
0.108
0.079
0.087
0.070

0.019
0.025
0.018
0.022
0.150

0.003
0.006
45°
MILLIMETERS
MIN.
MAX.
2.34
2.74
2.01
2.21
1.78

0.48
0.64
0.046
0.56
3.81

0.08
0.15
45°
DIM.
A
B
C
D
E
F
G
H
J
K
L
M
INCHES
MIN.
MAX.
0.044

0.044

0.040

0.030
0.035
0.013
0.020
0.003
0.006
0.110
0.119
0.047
0.056
0.075 typical
0.075 typical
0.103

0.024

MILLIMETERS
MIN.
MAX.
1.10

1.10

1.00

0.75
0.90
0.35
0.50
0.08
0.15
2.80
3.00
1.20
1.40
1.90 typical
1.90 typical
2.6

0.6

DIM.
N
P
GRADIENT
10° max. 1
2° . . . 30°
DIM.
A
B
C
D
E
F
G
H
MP4T682539
Specification Subject to Change Without Notice
M-Pulse
Microwave_____________________________________________________________________________
_______
9
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
Low Current 8 Volt, Low Noise High fT Silicon Transistor
MP4T6825 Series
NOTE:
1. Applicable on all sides
Specification Subject to Change Without Notice
M-Pulse
Microwave_____________________________________________________________________________
_______
10
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
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