IXYS IXTQ26N50P Polarhv power mosfet Datasheet

IXTQ 26N50P
IXTT 26N50P
IXTV 26N50P
IXTV 26N50PS
PolarHVTM
Power MOSFET
VDSS
ID25
=
=
≤
RDS(on)
500
26
230
V
A
Ω
mΩ
N-Channel Enhancement Mode
Avalanche Rated
TO-3P (IXTQ)
Symbol
Test Conditions
VDSS
TJ = 25° C to 150° C
500
V
VDGR
TJ = 25° C to 150° C; RGS = 1 MΩ
500
V
VGSS
Continuos
±30
V
VGSM
Transient
±40
V
ID25
TC = 25° C
26
A
IDM
TC = 25° C, pulse width limited by TJM
78
A
IAR
TC = 25° C
26
A
EAR
TC = 25° C
40
mJ
EAS
TC = 25° C
1.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 4 Ω
10
V/ns
PD
Maximum Ratings
TJ
TJM
Tstg
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Md
Mounting torque
Weight
TO-3P
TO-268
PLUS220 & PLUS220SMD
(TO-3P)
400
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
BVDSS
VGS = 0 V, ID = 250 µA
500
VGS(th)
VDS = VGS, ID = 250µA
3.0
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
TJ = 125° C
S
D (TAB)
PLUS220 (IXTV)
D
D (TAB)
S
PLUS220SMD (IXTV_S)
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Features
l
V
l
5.5
V
l
±100
nA
25
250
µA
µA
230
mΩ
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
l
l
l
© 2006 IXYS All rights reserved
D (TAB)
G
g
g
g
Characteristic Values
Min. Typ.
Max.
S
TO-268 (IXTT)
1.13/10 Nm/lb.in.
6
5.5
5
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
D
G
TC = 25° C
TL
TSOLD
G
Easy to mount
Space savings
High power density
DS99206E(12/05)
IXTQ 26N50P IXTT 26N50P
IXTV 26N50P IXTV26N50PS
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 20 V; ID = 0.5 ID25, pulse test
31
S
3600
pF
380
pF
Crss
48
pF
td(on)
20
ns
Ciss
Coss
24
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 ID25
25
ns
td(off)
RG = 4 Ω (External)
58
ns
tf
20
ns
Qg(on)
65
nC
18
nC
20
nC
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
TO-3P (IXTQ) Outline
0.31 ° C/W
RthJC
° C/W
0.21
RthCS
Source-Drain Diode
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
Symbol
Test Conditions
IS
VGS = 0 V
26
A
ISM
Repetitive
104
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
IF = 25A, -di/dt = 100 A/µs
300
ns
QRM
VR = 100V, VGS = 0 V
3.3
µC
PLUS220 (IXTV) Outline
PLUS220SMD (IXTV_S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXTQ 26N50P IXTT 26N50P
IXTV 26N50P IXTV26N50PS
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
26
60
V GS = 10V
8V
7V
24
22
50
20
45
I D - Amperes
18
I D - Amperes
V GS = 10V
8V
55
16
14
12
6V
10
35
30
25
8
20
6
15
4
10
2
7V
40
6V
5
5V
0
5V
0
0
1
2
3
4
5
6
7
0
3
6
9
26
18
21
24
27
30
3.1
V GS = 10V
7V
24
22
V GS = 10V
2.8
2.5
18
R DS(on) - Normalized
20
I D - Amperes
15
Fig. 4. R DS(on) Normalized to ID = 13A Value
v s. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
6V
16
14
12
10
8
6
5V
2.2
I D = 26A
1.9
1.6
I D = 13A
1.3
1
4
0.7
2
0
0.4
0
2
4
6
8
10
12
14
16
-50
-25
V DS - Volts
0
25
50
75
100
125
150
T J - Degrees Centigrade
Fig. 5. R DS(on) Normalized to ID = 13A Value
v s. Drain Current
Fig. 6. Maximum Drain Current v s.
Case Temperature
30
3.2
3
V GS = 10V
TJ = 125ºC
2.8
25
2.6
2.4
I D - Amperes
R DS(on) - Normalized
12
V DS - Volts
V DS - Volts
2.2
2
1.8
1.6
20
15
10
1.4
TJ = 25ºC
1.2
5
1
0.8
0
0
5
10
15
20
25
30
35
I D - Amperes
© 2006 IXYS All rights reserved
40
45
50
55
60
-50
-25
0
25
50
75
T J - Degrees Centigrade
100
125
150
IXTQ 26N50P IXTT 26N50P
IXTV 26N50P IXTV26N50PS
Fig. 8. Transconductance
50
45
45
40
40
35
35
30
g f s - Siemens
I D - Amperes
Fig. 7. Input Admittance
50
TJ = 125ºC
25ºC
- 40ºC
25
20
TJ = - 40ºC
25ºC
125ºC
30
25
20
15
15
10
10
5
5
0
0
3.5
4
4.5
5
5.5
6
6.5
7
0
5
10
15
20
V GS - Volts
25
30
35
40
45
50
55
60
60
65
I D - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
80
10
V DS = 250V
9
70
I D = 13A
8
I G = 10mA
60
I S - Amperes
7
V GS - Volts
50
40
30
TJ = 125ºC
6
5
4
3
20
2
10
TJ = 25ºC
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0
5
10
V SD - Volts
15
20
25
30
35
40
45
50
55
Q G - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100
10,000
f = 1 MHz
Capacitance - PicoFarads
RDS(on) Limit
C iss
25µs
I D - Amperes
1,000
C oss
100µs
10
1ms
100
10ms
DC
TJ = 150ºC
C rss
TC = 25ºC
10
1
0
5
10
15
20
25
30
35
40
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V DS - Volts
1000
IXTQ 26N50P IXTT 26N50P
IXTV 26N50P IXTV26N50PS
Fig. 13. Maximum Transient Thermal Resistance
R (th)JC - ºC / W
1.000
0.100
0.010
0.0001
0.001
0.01
Pulse W idth - Seconds
TO-268 (IXTT) Outline
© 2006 IXYS All rights reserved
0.1
1
10
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