Vishay IRF9640 Power mosfet Datasheet

IRF9640, SiHF9640
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
•
- 200
RDS(on) (Ω)
VGS = - 10 V
0.50
Qg (Max.) (nC)
44
Qgs (nC)
7.1
Qgd (nC)
27
Configuration
Single
Dynamic dV/dt Rating
Repetitive Avalanche Rated
P-Channel
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
S
DESCRIPTION
TO-220
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
G
S
G
D
D
P-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
IRF9640PbF
SiHF9640-E3
IRF9640
SiHF9640
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
- 200
V
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current
VGS at - 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
- 11
- 6.8
A
IDM
- 44
1.0
W/°C
Single Pulse Avalanche Energyb
EAS
700
mJ
Repetitive Avalanche Currenta
IAR
- 11
A
Repetitive Avalanche Energya
EAR
13
mJ
PD
125
W
dV/dt
- 5.0
V/ns
TJ, Tstg
- 55 to + 150
Linear Derating Factor
Maximum Power Dissipation
Peak Diode Recovery
TC = 25 °C
dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
300d
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 50 V, starting TJ = 25 °C, L = 8.7 mH, RG = 25 Ω, IAS = - 11 A (see fig. 12).
c. ISD ≤ - 11 A, dI/dt ≤ 150 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91086
S-81272-Rev. A, 16-Jun-08
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IRF9640, SiHF9640
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
1.0
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VGS = 0 V, ID = - 250 µA
- 200
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = - 1 mA
-
-0.2
-
V/°C
VGS(th)
VDS = VGS, ID = - 250 µA
- 2.0
-
- 4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 200 V, VGS = 0 V
-
-
- 100
VDS = - 160 V, VGS = 0 V, TJ = 125 °C
-
-
- 500
Gate-Source Threshold Voltage
µA
-
-
0.50
Ω
gfs
VDS = - 50 V, ID = - 6.6 Ab
4.1
-
-
S
Input Capacitance
Ciss
VGS = 0 V,
-
1200
-
-
370
-
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
ID = - 6.6 Ab
VGS = - 10 V
Dynamic
Output Capacitance
Coss
VDS = - 25 V,
Reverse Transfer Capacitance
Crss
f = 1.0 MHz, see fig. 5
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VGS = - 10 V
ID = - 11 A, VDS = - 160 V,
see fig. 6 and 13b
-
81
-
-
-
44
-
-
7.1
Gate-Drain Charge
Qgd
-
-
27
Turn-On Delay Time
td(on)
-
14
-
Rise Time
Turn-Off Delay Time
Fall Time
pF
nC
tr
VDD = - 100 V, ID = - 11 A
-
43
-
td(off)
RG = 9.1 Ω, RD = 8.6 Ω, see fig. 10b
-
39
-
-
38
-
-
4.5
-
-
7.5
-
-
-
- 11
-
-
- 44
-
-
-5
V
-
250
300
ns
-
2.9
3.6
µC
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
ns
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = - 11 A, VGS = 0 Vb
TJ = 25 °C, IF = - 11 A, dI/dt = 100 A/µsb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91086
S-81272-Rev. A, 16-Jun-08
IRF9640, SiHF9640
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91086
S-81272-Rev. A, 16-Jun-08
www.vishay.com
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IRF9640, SiHF9640
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91086
S-81272-Rev. A, 16-Jun-08
IRF9640, SiHF9640
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
+VDD
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
10 %
td(on)
td(off) tf
tr
90 %
VGS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
IAS
L
VDS
RG
-
D.U.T
VDS
+ VDS
VDD
IAS
- 10 V
tp
0.01 Ω
tp
V(BR)DSS
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91086
S-81272-Rev. A, 16-Jun-08
Fig. 12b - Unclamped Inductive Waveforms
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IRF9640, SiHF9640
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
- 10 V
12 V
0.2 µF
0.3 µF
QGS
-
QGD
D.U.T.
VG
+ VDS
VGS
- 3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91086
S-81272-Rev. A, 16-Jun-08
IRF9640, SiHF9640
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
RG
+
• dV/dt controlled by RG
• ISD controlled by duty factor "D"
• D.U.T. - device under test
+
- VDD
Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
VDD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
*
ISD
VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91086.
Document Number: 91086
S-81272-Rev. A, 16-Jun-08
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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