TPCM8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCM8001-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable-Equipment Applications Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 6.0 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 7 mΩ (typ.) • High forward transfer admittance: |Yfs| =36 S (typ.) 0.25±0.05 5 0.2＋0 － 0.2 0.166±0.05 0.75±0.05 0.05 S S 1 4 2.75±0.2 Absolute Maximum Ratings (Ta = 25°C) 0.8±0.1 8 Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V (Note 1) ID 20 Pulsed (Note 1) IDP 60 PD 30 W PD 2.3 W PD 1.0 W EAS 104 mJ IAR 20 A EAR 1.8 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current Drain power dissipation (Tc=25°C) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25°C) (Note 4) A 2.2±0.2 Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 3.5±0.2 0.6±0.1 • 0.55 4 1 • 0.05 M A 1.05±0.2 • 0.8 8 3.65±0.2 4.65±0.3 0.5±0.1 Unit: mm A 5 1,2,3：SOURCE 5,6,7,8：DRAIN 4：GATE JEDEC ― JEITA ― TOSHIBA 2-4L1A Weight: 0.028 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-16 TPCM8001-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25°C) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-c) 4.17 °C/W Rth (ch-a) 54.3 °C/W Rth (ch-a) 125 °C/W Marking (Note 5) M8001 H Part No. (or abbreviation code) Lot No. ※ Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = 20 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: • on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-16 TPCM8001-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ VDS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 VGS = 4.5 V, ID = 10 A ⎯ 10 14 VGS = 10 V, ID = 10 A ⎯ 7 9.5 VDS = 10 V, ID = 10 A 18 36 ⎯ ⎯ 1130 ⎯ ⎯ 120 ⎯ ⎯ 480 ⎯ ⎯ 2.5 ⎯ ⎯ 9 ⎯ Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr VGS Turn-on time ton Fall time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd 3 ⎯ VDD ∼ − 15 V < Duty = 1%, tw = 10 μs ⎯ 19 ⎯ VDD ∼ − 24 V, VGS = 10 V, ID = 20 A ⎯ 19 ⎯ VDD ∼ − 24 V, VGS = 5 V, ID = 20 A ⎯ 11 ⎯ ⎯ 3.9 ⎯ ⎯ 4.0 ⎯ Gate switch charge QSW ⎯ 6.0 ⎯ VDD ∼ − 24 V, VGS = 10 V, ID = 20 A V mΩ S pF ns ⎯ tf Turn-off time 0V 4.7 Ω Switching time ID = 10A VOUT 10 V RL = 1.5Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz V nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 60 A ⎯ ⎯ −1.2 V VDSF IDR = 20 A, VGS = 0 V 3 2006-11-16 TPCM8001-H ID – VDS 4 10 3.8 ID – VDS 3.6 8 16 6 (A) 5 4.5 10 8 Common source Ta = 25°C Pulse test 4.2 4 6 40 3.4 5 3.8 ID 3.3 12 4.5 3.2 Drain current ID Drain current 50 Common source Ta = 25°C Pulse test (A) 20 8 3.0 4 3.6 30 3.4 20 3.2 10 VGS = 3 V VGS = 2.8 V 0 0 0.2 0.4 0.6 Drain-source voltage 0.8 VDS 0 1.0 0 (V) 0.4 0.8 Drain-source voltage ID – VGS 50 (V) Common source Ta = 25°C Pulse test VDS (A) Drain-source voltage ID Drain current (V) VDS – VGS 30 20 25 10 0 Ta = −55°C 0 1 2 3 4 Gate-source voltage 5 VGS 0.3 0.2 ID = 20 A 0.1 0 6 5 0 (V) 6 8 VGS 10 (V) Common source Ta = −55°C Drain-source ON-resistance RDS (ON) (mΩ) |Yfs| 4 RDS (ON) − ID Common source VDS = 10 V Pulse test 100 25 1 0.1 0.1 2 100 100 10 10 Gate-source voltage ⎪Yfs⎪ − ID (S) 2.0 0.4 100 Forward transfer admittance 1.6 VDS 0.5 Common source VDS = 10 V Pulse test 40 1.2 1 Drain current 10 ID Ta = 25°C Pulse test VGS = 4.5 V 10 10 1 0.1 100 (A) 1 Drain current 4 10 ID 100 (A) 2006-11-16 TPCM8001-H RDS (ON) − Ta IDR − VDS 100 Common source Pulse test Common source 10 5 12 VGS = 4.5 V 8 ID = 20, 10, 5 A VGS = 10 V 0 −80 −40 0 40 Ambient temperature 80 120 Ta 10 IDR ID = 20 A 4 Ta = 25°C Pulse test (A) 16 Drain reverse current 4.5 1 VGS = 0 V 1 160 3 10 −0.2 0 (°C) −0.4 2.5 Vth (V) (pF) Gate threshold voltage C Common source VDS = 10 V ID = 1 mA Pulse test 2.0 100 Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C 1 10 Drain-source voltage 0.5 0 −80 100 VDS 1.0 −40 0 (V) 3.0 50 (2) Device mounted on a glass-epoxy (1) 40 ｔ＝10s Drain-source voltage 1.5 (2) 0.5 40 80 Ambient temperature 160 (°C) 20 16 VDS board (b) (Note 2b) 2.0 120 Ta Common source ID = 20 A Ta = 25°C Pulse test (V) (1) Device mounted on a glass-epoxy board (a) (Note 2a) PD (W) 80 Dynamic input/output characteristics PD − Ta Drain power dissipation 40 Ambient temperature (V) 10 0.1 1.5 120 Ta 30 (°C) 16 20 4 VGS 8 16 Total gate charge 5 8 VDD = 32 V 8 10 0 0 160 12 VDS 24 Qg 32 VGS Capacitance Coss 0 0 −1.0 (V) Ciss 1000 1.0 −0.8 VDS Vth − Ta Capacitance – VDS 10000 2.5 −0.6 Drain-source voltage Gate-source voltage Drain-source ON-resistance RDS (ON) (mΩ) 20 0 40 (nC) 2006-11-16 TPCM8001-H rth − tw 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) rth (°C/W) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) (3) Tc=25°C (1) Transient thermal impedance 100 10 (3) 1 Single - pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 Safe operating area PD – Tc 50 ID max (Pulse) * (W) 100 PD (A) t =1 ms * 10 ms * Drain current ID Drain power dissipation ID max (Continuous) 10 DC operation Tc = 25°C 1 * Single - pulse Ta = 25°C Curves must be linearly with increase derated in temperature. 0.1 0.1 1000 (s) Drain-source voltage 10 VDS 30 20 10 0 0 VDSS max 1 40 40 80 Case temperature 100 120 TC 160 (°C) (V) 6 2006-11-16 TPCM8001-H RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-16