PHILIPS BF545B N-channel silicon junction field-effect transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BF545A; BF545B; BF545C
N-channel silicon junction
field-effect transistors
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Jul 29
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
FEATURES
• Low leakage level (typ. 500 fA)
• High gain
• Low cut-off voltage (max. 2.2 V for BF545A).
handbook, halfpage
2
APPLICATIONS
1
• Impedance converters in e.g. electret microphones and
infra-red detectors
d
g
s
• VHF amplifiers in oscillators and mixers.
3
DESCRIPTION
Top view
MAM036
N-channel symmetrical silicon junction field-effect
transistors in a SOT23 package.
PINNING - SOT23
PIN
SYMBOL
1
s
source
2
d
drain
3
g
gate
Marking codes:
BF545A: M65.
BF545B: M66.
BF545C: M67.
DESCRIPTION
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−
±30
V
−0.4
−7.8
V
2
6.5
mA
BF545B
6
15
mA
BF545C
12
25
mA
VDS
drain-source voltage
VGSoff
gate-source cut-off voltage
ID = 1 µA; VDS = 15 V
IDSS
drain current
VGS = 0; VDS = 15 V
BF545A
Ptot
total power dissipation
up to Tamb = 25 °C
−
250
mW
yfs
forward transfer admittance
VGS = 0; VDS = 15 V
3
6.5
mS
1996 Jul 29
2
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
±30
V
VGSO
gate-source voltage
open drain
−
−30
V
VGDO
gate-drain voltage (DC)
open source
−
−30
V
IG
forward gate current (DC)
−
10
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
150
°C
Tj
operating junction temperature
−
150
°C
up to Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm2.
MBB688
400
handbook, halfpage
Ptot
(mW)
300
200
100
0
0
50
100
150
200
Tamb (°C)
Fig.2 Power derating curve.
1996 Jul 29
3
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
VALUE
UNIT
500
K/W
thermal resistance from junction to ambient; note 1
Note
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm2.
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)GSS
gate-source breakdown voltage IG = −1 µA; VDS = 0
VGSoff
gate-source cut-off voltage
MAX.
UNIT
−
−
V
BF545A
−0.4
−
−2.2
V
BF545B
−1.6
−
−3.8
V
−3.2
−
−7.8
V
−0.4
−
−7.5
V
BF545A
2
−
6.5
mA
BF545B
6
−
15
mA
BF545C
12
−
25
mA
VGS = −20 V; VDS = 0
−
−0.5
−1000
pA
VGS = −20 V; VDS = 0;
Tj = 125 °C
−
−
−100
nA
ID = 200 µA; VDS = 15 V
ID = 1 µA; VDS = 15 V
IGSS
TYP.
−30
BF545C
IDSS
MIN.
drain current
gate leakage current
VGS = 0; VDS = 15 V
yfs
forward transfer admittance
VGS = 0; VDS = 15 V
3
−
6.5
mS
yos
common source output
admittance
VGS = 0; VDS = 15 V
−
40
−
µS
1996 Jul 29
4
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
DYNAMIC CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
UNIT
Cis
input capacitance
VDS = 15 V; VGS = −10 V; f = 1 MHz
1.7
pF
VDS = 15 V; VGS = 0; f = 1 MHz
3
pF
Crs
reverse transfer capacitance
VDS = 15 V; VGS = −10 V; f = 1 MHz
0.8
pF
VDS = 15 V; VGS = 0; f = 1 MHz
0.9
pF
15
µS
VDS = 10 V; ID = 1 mA; f = 450 MHz
300
µS
common source input conductance VDS = 10 V; ID = 1 mA; f = 100 MHz
gis
gfs
common source transfer
conductance
VDS = 10 V; ID = 1 mA; f = 100 MHz
2
mS
VDS = 10 V; ID = 1 mA; f = 450 MHz
1.8
mS
grs
common source reverse
conductance
VDS = 10 V; ID = 1 mA; f = 100 MHz
−6
µS
VDS = 10 V; ID = 1 mA; f = 450 MHz
−40
µS
common source output
conductance
VDS = 10 V; ID = 1 mA; f = 100 MHz
30
µS
VDS = 10 V; ID = 1 mA; f = 450 MHz
60
µS
gos
MBB467
30
MBB466
6
handbook, halfpage
handbook, halfpage
IDSS
(mA)
Yfs
(mS)
20
5
10
0
0
−2
−4
4
−6
−8
VGSoff (V)
0
−2
−4
−6
−8
VGSoff (V)
VDS = 15 V; VGS = 0; Tj = 25 °C.
VDS = 15 V; Tj = 25 °C.
Fig.4
Fig.3
1996 Jul 29
Drain current as a function of gate-source
cut-off voltage; typical values.
5
Forward transfer admittance as a
function of gate-source cut-off voltage;
typical values.
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
MBB465
80
MBB464
300
handbook, halfpage
handbook, halfpage
RDSon
(Ω)
Yos
(µS)
200
40
100
0
0
−2
−4
0
−6
−8
VGSoff (V)
VDS = 15 V; VGS = 0; Tj = 25 °C.
Fig.5
−6
−8
VGSoff (V)
−4
−2
0
VDS = 100 mV; VGS = 0; Tj = 25 °C.
Common-source output admittance as a
function of gate-source cut-off voltage;
typical values.
Fig.6
Drain-source on-resistance as a
function of gate-source cut-off voltage;
typical values.
MBB462
6
MBB463
6
handbook, halfpage
handbook, halfpage
ID
(mA)
ID
(mA)
VGS = 0 V
4
4
−0.5 V
2
2
−1.0 V
0
0
4
8
12
VDS (V)
0
−3
16
Tj = 25 °C.
−1
VGS (V)
0
VDS = 15 V; Tj = 25 °C.
Fig.7 Typical output characteristics; BF545A.
1996 Jul 29
−2
Fig.8 Typical input characteristics; BF545A.
6
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
MBB460
16
MBB459
16
handbook, halfpage
handbook, halfpage
ID
(mA)
ID
(mA)
VGS = 0 V
12
12
−0.5 V
−1 V
8
8
−1.5 V
−2 V
4
4
−2.5 V
0
−6
0
0
4
8
12 V
16
DS (V)
Tj = 25 °C.
−4
−2
VGS (V)
0
VDS = 15 V; Tj = 25 °C.
Fig.9 Typical output characteristics; BF545B.
Fig.10 Typical input characteristics; BF545B.
MBB457
30
MBB456
30
handbook, halfpage
handbook, halfpage
ID
(mA)
ID
(mA)
VGS = 0 V
20
20
−1 V
−2 V
10
10
−3 V
−4 V
−5 V
0
−8
0
0
4
8
12
VDS (V)
16
Tj = 25 °C.
−4
−2
VGS (V)
0
VDS = 15 V; Tj = 25 °C.
Fig.11 Typical output characteristics; BF545C.
1996 Jul 29
−6
Fig.12 Typical input characteristics; BF545C.
7
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
MBB461
103
handbook,
halfpage
I
MBB458
103
handbook,
halfpage
I
D
(µA)
102
D
(µA)
102
10
10
1
1
10−1
10−1
10−2
10−2
10−3
−3
−2
−1
VGS (V)
10−3
−6
0
VDS = 15 V; Tj = 25 °C.
−4
−2
VGS (V)
0
VDS = 15 V; Tj = 25 °C.
Fig.13 Drain current as a function of gate-source
voltage; typical values for BF545A.
Fig.14 Drain current as a function of gate-source
voltage; typical values for BF545B.
MBB455
103
handbook,
halfpage
I
MBB454
−102
handbook, halfpage
D
(µA)
102
IG
(pA)
ID = 10 mA
−10
10
1 mA
−1
1
IGSS
10−1
−10−1
0.1 mA
10−2
10−3
−8
−6
−4
−2
VGS (V)
−10−2
0
0
VDS = 15 V; Tj = 25 °C.
VDG (V)
20
ID = 10 mA only for BF545B and BF545C; Tj = 25 °C.
Fig.15 Drain current as a function of gate-source
voltage; typical values for BF545C.
1996 Jul 29
10
Fig.16 Gate current as a function of drain-gate
voltage; typical values.
8
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
MBB453
−103
handbook, halfpage
MBB452
1
handbook, halfpage
IGSS
(pA)
−102
Crs
(pF)
−10
0.5
−1
−10−1
−50
0
50
100
Tj (°C)
0
−10
150
VDS = 0; VGS = −20 V.
−5
0
VGS (V)
VDS = 15 V; Tj = 25 °C.
Fig.17 Gate current as a function of junction
temperature; typical values.
Fig.18 Reverse transfer capacitance as a function
of gate-source voltage; typical values.
MBB451
3
MBB468
102
handbook, halfpage
handbook, halfpage
yis
(mS)
Cis
(pF)
10
2
bis
1
1
gis
10−1
0
−10
−5
VGS (V)
10−2
10
0
102
f (MHz)
103
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
VDS = 15 V; Tj = 25 °C.
Fig.20 Common-source input admittance;
typical values.
Fig.19 Typical input capacitance.
1996 Jul 29
9
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
MBB469
10 2
handbook, halfpage
MBB470
10
handbook, halfpage
yrs
(mS)
Yfs
(mS)
−brs
1
10
10−1
g fs
1
10 –1
10
102
f (MHz)
10−3
10
103
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
f (MHz)
103
Fig.22 Common-source reverse transfer
admittance; typical values.
MBB471
10
handbook, halfpage
yos
(mS)
1
bos
10−1
gos
102
f (MHz)
103
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
Fig.23 Common-source output admittance;
typical values.
1996 Jul 29
102
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
Fig.21 Common-source forward transfer
admittance; typical values.
10−2
10
−grs
10−2
–b fs
10
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
PACKAGE OUTLINE
3.0
2.8
handbook, full pagewidth
0.55
0.45
0.150
0.090
B
1.9
0.95
2
1
0.1
max
10 o
max
0.2 M A
A
1.4
1.2
2.5
max
10 o
max
3
1.1
max
30 o
max
0.48
0.38
0.1 M A B
TOP VIEW
Dimensions in mm.
Fig.24 SOT23.
1996 Jul 29
11
MBC846
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jul 29
12
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