MPSA44 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High Voltage NPN Transistor Collector Emitter Base Collector Base Emitter REF. A B C D E Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 REF. F G H J K Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Current - Pulsed Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction, Storage Temperature SYMBOL RATING UNIT VCBO VCEO VEBO IC ICM PC RθJA TJ, TSTG 400 400 5 0.2 0.3 625 200 150, -55~150 V V V A A mW °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage1 Emitter to Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) hFE(3) hFE(4) VCE(sat)(1) VCE(sat)(2) VBE(sat) fT 400 400 5 80 70 40 80 50 - 0.1 5 0.1 300 0.2 0.3 0.75 - V V V μA μA μA DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Voltage http://www.SeCoSGmbH.com/ 27-Jun-2014 Rev. F V V MHz TEST CONDITION IC=100μA, IE =0 IC=1mA, IB =0 IE=100μA, IC =0 VCB=400 V, IE =0 VCB=400 V, IB =0 VEB=4V, IC=0 VCE=10V, IC=10mA VCE=10V, IC=1mA VCE=10V, IC=100mA VCE=10V, IC=50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA VCE =20V, IC=10mA, f=30MHz Any changes of specification will not be informed individually. Page 1 of 2 MPSA44 Elektronische Bauelemente NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 27-Jun-2014 Rev. F Any changes of specification will not be informed individually. Page 2 of 2