Renesas NV4V31SF Blue-violet laser diode 405 nm blue-violet laser light source Datasheet

Preliminary Data Sheet
NV4V31SF
Blue-Violet Laser Diode
405 nm Blue-Violet Laser Light Source
R08DS0070EJ0100
Rev.1.00
Jun 20, 2013
DESCRIPTION
The NV4V31SF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure
achieves a high optical power output of 175 mW (CW). The NV4V31SF can provide excellent linearity from low to
high output at high temperatures, and reduces the unevenness of beam divergence.
FEATURES
•
•
•
•
•
High optical output power
Peak wavelength
Single transverse mode (lateral)
Wide operating temperature range
φ 5.6 mm CAN package
Po = 175 mW @CW
λp = 405 nm TYP.
TC = −5 to +85°C
APPLICATIONS
• Blue-violet laser light source
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R08DS0070EJ0100 Rev.1.00
Jun 20, 2013
Page 1 of 7
NV4V31SF
PACKAGE DIMENSIONS (UNIT: mm)
90°±2°
1.6±0.2
1.0±0.15
CAP GLASS
0.4±0.1
X
Y
0.4±0.1
φ 5.6±0.1
φ 4.5 MAX.
LD CHIP
φ 3.55±0.1
Z
1.3±0.08
6.5±0.5 1.2±0.1 2.3±0.3
<R>
Chapter Title
0.5 MIN.
STEM
REFERENCE
PLAIN
3– φ 0.45±0.1
P.C.D.
φ 2.0±0.2
1
1
3
LD
2
3 (Stem GND)
2
BOTTOM VIEW
Remark
PIN CONNECTIONS
Cap glass thickness
: 0.25±0.03 mm
Cap glass refractive index : 1.53 ( λ = 405 nm)
R08DS0070EJ0100 Rev.1.00
Jun 20, 2013
Page 2 of 7
NV4V31SF
<R>
Chapter Title
ORDERING INFORMATION
Part Number
NV4V31SF
Order Number
NV4V31SF-A
Rank
HV
XV
Packing Style
Tray Packing (100 p/Tray), With data
Individual Packing (for samples), With data
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
Parameter
Optical Output Power (CW)
Reverse Voltage of LD
Operating Case Temperature
Storage Temperature
Symbol
Po
VR
TC
Tstg
Ratings
210
2
−5 to +85
−40 to +85
Unit
mW
V
°C
°C
RECOMMENDED OPERATING CONDITIONS
(TC = 25°C, unless otherwise specified)
Parameter
Optical Output Power (CW)
Symbol
Po
MAX.
175
Unit
mW
ELECTRO-OPTICAL CHARACTERISTICS
(TC = 25°C, unless otherwise specified)
Parameter
Threshold Current
Operating Current
Operating Voltage
Slope Efficiency
Peak Wavelength
Beam Divergence (lateral)
Beam Divergence (vertical)
Position Accuracy Angle (lateral)
Position Accuracy Angle (vertical)
R08DS0070EJ0100 Rev.1.00
Jun 20, 2013
Symbol
Ith
Iop
Vop
ηd
λp
θ//
θ⊥
Δθ//
Δθ⊥
Conditions
CW
CW, Po = 175 mW
CW, Po = 175 mW
CW, Po = 20 mW, 175 mW
CW, Po = 175 mW
CW, Po = 175 mW
CW, Po = 175 mW
MIN.
1.1
400
6
15
−3
−3
TYP.
35
150
5.0
1.55
405
9
20
0
0
MAX.
55
200
6.5
410
12
25
3
3
Unit
mA
mA
V
W/A
nm
deg.
deg.
Page 3 of 7
NV4V31SF
Chapter Title
TYPICAL CHARACTERISTICS
(TC = 25°C, unless otherwise specified)
OPTICAL OUTPUT POWER
vs. FORWARD CURRENT
FORWARD VOLTAGE vs.
FORWARD CURRENT
10
160
140
20°C
25°C
30°C
40°C
50°C
60°C
70°C
80°C
90°C
120
100
80
60
40
20
0
0
50
100
150
8
4
2
0
50
100
150
200
Forward Current IF (mA)
Forward Current IF (mA)
POWER DEPENDENCE OF
PEAK WAVELENGTH
TEMPERATURE DEPENDENCE OF
PEAK WAVELENGTH
412
Peak Wavelength λp (nm)
N=5
408
406
404
402
400
60°C
70°C
80°C
90°C
6
0
200
410
0.011 nm/mW
0
50
100
150
408
406
404
402
400
0
200
0.064 nm/°C
20
40
60
80
Optical Output Power PO (mW)
Temperature (°C)
FFP (LATERAL)
FFP (VERTICAL)
Relative Intensity
175 mW
120 mW
80 mW
40 mW
−30
410
175 mW
N=5
−20
−10
0
10
20
30
Angle (degrees)
100
175 mW
120 mW
80 mW
40 mW
Relative Intensity
Peak Wavelength λp (nm)
20°C
25°C
30°C
40°C
50°C
180
Forward Voltage VF (V)
Optical Output Power PO (mW)
200
−30
−20
−10
0
10
20
30
Angle (degrees)
Remark The graphs indicate nominal characteristics.
R08DS0070EJ0100 Rev.1.00
Jun 20, 2013
Page 4 of 7
NV4V31SF
Chapter Title
Wavelength Spectrum (175 mW)
1.2
1
1
Relative Intensity
Relative Intensity
Wavelength Spectrum (100 mW)
1.2
0.8
0.6
0.4
0.2
0
400
0.8
0.6
0.4
0.2
402
404
406
408
410
Wavelength λ (nm)
0
400
402
404
406
408
410
Wavelength λ (nm)
Remark The graphs indicate nominal characteristics.
R08DS0070EJ0100 Rev.1.00
Jun 20, 2013
Page 5 of 7
NV4V31SF
Chapter Title
NOTES ON HANDLING
1. Recommended soldering conditions
• Peak Temperature
≤ 350°C
• Time
≤ 3 seconds
• Soldering of leads should be made at the point 2.0 mm from the root of the lead
• This device cannot be mounted using reflow soldering.
2. Usage cautions
(1) Take the following steps to ensure that the device is not damaged by static electricity.
• Wear an antistatic wrist strap when soldering the device.
We recommend a strap with a 1 MΩ resistor.
• Make sure that the work table and soldering iron are grounded.
• Make sure that the soldering iron does not leak.
(2) Do not subject the package to undue stress.
The package has a tensile strength of 1N or less.
Do not exceed this rating. Also, avoid bending the leads as much as possible.
If the leads must be bent, bend them only once, making sure to anchor the stem base of the lead.
(3) Do not allow the cap glass of the package to become scratched or dirty.
Also, do not subject the cap glass to external force.
(4) Be sure to attach a heat sink to sufficiently dissipate heat.
(5) Use the device as soon as possible after opening the bag.
R08DS0070EJ0100 Rev.1.00
Jun 20, 2013
Page 6 of 7
NV4V31SF
Chapter Title
SAFETY INFORMATION ON THIS PRODUCT
DANGER
SEMICONDUCTOR LASER
VISIBLE LASER RADIATION
AVOID EYE OR SKIN EXPOSURE TO
DIRECT OR SCATTERED RADIATION
Warning
Laser Beam
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
A laser beam is emitted from this diode during operation.
If the laser beam or its reflection enters your eye, it may cause injury to the eye or loss of eyesight.
(Note that, depending on the wavelength of the beam, the laser beam might not be visible.)
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
R08DS0070EJ0100 Rev.1.00
Jun 20, 2013
Page 7 of 7
Revision History
NV4V31SF Data Sheet
Rev.
Date
Page
0.01
1.00
Jan 23, 2013
Jun 20, 2013
−
p.2
p.3
Description
Summary
First edition issued
Modification of PACKAGE DIMENSIONS
Modification of ORDERING INFORMATION
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