LITEON LTV-4N35S Property of lite-on only Datasheet

LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
FEATURES
* High crrent transfer ratio
( CTR : MIN. 100% at IF = 10mA, VCE = 10V )
* Response time
( ton : TYP. 3µs at VCC = 10V, IC = 2mA, RL = 100Ω )
* Input-output isolation voltage
LTV-4N35 series : Viso = 3,550Vrms
LTV-4N37 series : Viso = 1,500Vrms
* Dual-in-line package :
LTV-4N35, LTV-4N37
* Wide lead spacing package :
LTV-4N35M, LTV-4N37M
* Surface mounting package :
LTV-4N35S, LTV-4N37S
* Tape and reel packaging :
LTV-4N35S-TA, LTV-4N37S-TA, LTV-4N35S-TA1, LTV-4N37S-TA1
* UL approved ( No. E113898 )
* TUV approved ( No. R9653630 )
* CSA approved ( No. CA91533-1 )
* FIMKO approved ( No. 193422-01 )
* NEMKO approved ( No. P96103013 )
* DEMKO approved ( No. 303985 )
* SEMKO approved ( No. 9646047 / 01-30 )
* VDE approved ( No. 094722 )
Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 )
BNS-OD-C131/A4
Page :
1 of 9
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-4N35 :
LTV-4N37 :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand).
Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 )
BNS-OD-C131/A4
Page :
2 of 9
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-4N35M :
LTV-4N37M :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand).
Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 )
BNS-OD-C131/A4
Page :
3 of 9
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV-4N35S :
LTV-4N37S :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand).
Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 )
BNS-OD-C131/A4
Page :
4 of 9
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
TAPING DIMENSIONS
LTV-4N35S-TA , LTV-4N37S-TA :
LTV-4N35S-TA1 , LTV-4N37S-TA1 :
Description
Tape wide
Pitch of sprocket holes
Distance of compartment
Distance of compartment to compartment
Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 )
BNS-OD-C131/A4
Symbol
W
P0
F
P2
P1
Dimensions in mm ( inches )
16 ± 0.3 ( .63 )
4 ± 0.1 ( .15 )
7.5 ± 0.1 ( .295 )
2 ± 0.1 ( .079 )
12 ± 0.1 ( .472 )
Page :
5 of 9
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ABSOLUTE MAXIMUM RATING
( Ta = 25°C )
PARAMETER
INPUT
OUTPUT
SYMBOL
RATING
UNIT
Forward Current
IF
60
mA
Reverse Voltage
VR
6
V
Power Dissipation
P
100
mW
Collector - Emitter Voltage
VCEO
30
V
Emitter - Collector Voltage
VECO
7
V
Collector - Base Voltage
VCBO
70
V
Collector Current
IC
100
mA
Collector Power Dissipation
PC
300
mW
Ptot
350
mW
Total Power Dissipation
LTV-4N35 series
*1 Isolation Voltage
3,550
Viso
LTV-4N37 series
Vrms
1,500
Operating Temperature
Topr
-55 ~ +100
°C
Storage Temperature
Tstg
-55 ~ +150
°C
Tsol
260
°C
*2 Soldering Temperature
*1. AC For 1 Minute, R.H. = 40 ~ 60%
Isolation voltage shall be measured using the following method.
(1) Short between anode and cathode on the primary side and between collector,
emitter and base on the secondary side.
(2) The isolation voltage tester with zero-cross circuit shall be used.
(3) The waveform of applied voltage shall be a sine wave.
*2. For 10 Seconds
Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 )
BNS-OD-C131/A4
Page :
6 of 9
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ELECTRICAL - OPTICAL CHARACTERISTICS
( Ta = 25°C )
PARAMETER
INPUT
SYMBOL MIN. TYP. MAX. UNIT
CONDITIONS
Forward Voltage
VF
—
1.2
1.5
V
IF=10mA
Reverse Current
IR
—
—
10
µA
VR=4V
Terminal Capacitance
Ct
—
50
—
pF
V=0, f=1KHz
—
—
50
nA
VCE=10V, IF=0
—
—
500
µA
VCE=30V, IF=0
Collector Dark
Current
Ta=25°C
ICEO
Ta=100°C
Collector-Emitter
Breakdown Voltage
BVCEO
30
—
—
V
IC=0.1mA
IF=0
Emitter-Collector
Breakdown Voltage
BVECO
7
—
—
V
IE=10µA
IF=0
Collector-Base
Breakdown Voltage
BVCBO
70
—
—
V
IC=0.1mA
IF=0
IC
10
—
—
mA
CTR
100
—
—
%
Collector-Emitter
Saturation Voltage
VCE(sat)
—
—
0.3
V
IF=50mA
IC=2mA
Isolation Resistance
Riso
—
Ω
DC500V
40 ~ 60% R.H.
Floating Capacitance
Cf
—
1
2.5
pF
V=0, f=1MHz
Response Time (Turn-on)
ton
—
3
10
µs
Response Time (Turn-off)
toff
—
3
10
µs
OUTPUT
Collector Current
* Current Transfer Ratio
TRANSFER
5×1010 1×1011
CHARACTERISTICS
* CTR =
IF=10mA
VCE=10V
VCC=10V, IC=2mA
RL=100Ω
IC
× 100%
IF
Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 )
BNS-OD-C131/A4
Page :
7 of 9
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.1 Forward Current vs. Ambient
Temperature
Fig.2 Collector Power Dissipation vs.
Ambient Temperature
Collector Power dissipation Pc (mW)
Forward current IF (mA)
100
80
60
40
20
0
-55 -25
0
25
50
75
100 125
400
300
200
100
0
-55
-25
0
25
50
75 100 125
o
o
Ambient temperature Ta ( C)
Ambient temperature Ta ( C)
Fig.3 Forward Current vs. Forward
Voltage
Fig.4 Current Transfer Ratio vs.
Forward Current
500
Current transfer ratio CTR (%)
Forward current I F(mA)
o
Ta= 75 C
o
50 C
200
o
25 oC
0C
o
-25 C
100
50
20
10
5
2
0.5
1.0
1.5
2.0
2.5
V = 10V
o
Ta= 25 C
140
120
100
60
40
20
3.0
Forward voltage VF (V)
Fig.5 Collector Current vs.
Collector-emitter Voltage
R =
80
100k
0
0.1 0.2 0.5 1
1
0
160
100k
5 10 20
2
50 100
Forward current IF (mA)
o
Fig.6 Relative Current Transfer Ratio
vs. Ambient Temperature
Ta= 25 C
30
Collector current Ic (mA)
10mA
20
5mA
10
2mA
0
0
5
10
15
Collector-emitter voltage V (V)
Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 )
BNS-OD-C131/A4
Relative current transfer ratio (%)
150
Pc(MAX.)
IF= 15mA
I F= 10mA
VCE= 10V
100
50
0
-55
-25
0
25
50
75
100
o
Ambient temperature Ta ( C)
Page :
8 of 9
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.7 Collector-emitter Saturation Voltage
vs. Ambient Temperature
Fig.8 Collector Dark Current vs.
Ambient Temperature
-6
10
I F= 50mA
Ic= 2mA
0.10
Collector dark current ICEO (A)
Collector-emitter saturation voltage
V (sat) (V)
0.12
0.08
0.06
0.04
0.02
0
-55
5
5
-8
10
5
-9
10
5
-10
10
5
-11
10
5
-12
10
5
-13
10
-25
0
25
50
75
100
-55
40
60 100 100 125
Fig.10 Frequency Response
5
V = 10V
Ic= 2mA
o
Ta= 25 C
V = 5V
Ic= 2mA
o
Ta= 25 C
tf
tr
Voltage gain Av (dB)
Response time ( s)
20
Ambient temperature Ta ( C)
Fig.9 Response Time vs. Load
Resistance
td
20
10
5
2
1
ts
0
-5
RL= 10k
100
-10
1k
-15
0.5
0.2
0.05 0.1 0.2 0.5 1 2
-20
0.5 1
5 10 20 50
Load resistance RL (k )
7
5 10 20
50 100 200 500
Test Circuit for Response Time
Ic= 0.5mA
o
Ta= 25 C
1mA
6
2
Frequency f (kHz)
Fig.11 Collector-emitter Saturation
Voltage vs. Forward Current
Collector-emitter saturation voltage
VCE(sat)
-25
o
o
Ambient temperature Ta ( C)
200
100
50
V = 10V
-7
10
Vcc
Input
RD
RL
Input
Output
Output
10%
2mA
90%
5
3mA
5mA
7mA
4
ts
td
tr
3
tf
Test Circuit for Frequency Response
2
Vcc
1
RD
0
0
5
10
RL
Output
15
Forward current IF(mA)
Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 )
BNS-OD-C131/A4
Page :
9 of 9
Similar pages