2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE (sat) = 0.4 V (typ.) Unit: mm (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V DC IC 50 Pulse ICP 100 Base current IB 25 mA Collector power dissipation PC 900 mW Junction temperature Tj 150 °C JEDEC Tstg −55 to 150 °C JEITA Collector current Storage temperature range mA TO-92MOD ― TOSHIBA 2-5J1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.36 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 2SC5122 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 400 V, IE = 0 ― ― 1 μA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 1 μA V (BR) CEO IC = 1 mA, IB = 0 400 ― ― V Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage hFE (1) VCE = 5 V, IC = 1 mA 80 ― ― hFE (2) VCE = 5 V, IC = 20 mA 100 ― 300 IC = 20 mA, IB = 0.5 mA ― 0.4 1.0 V VCE (sat) Base-emitter voltage VBE VCE = 5 V, IC = 20 mA ― 0.7 1.0 V Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 4 ― pF Marking C5122 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-10 2SC5122 IC – VCE Common emitter Ta = 25°C Common emitter 1 mA 900 800 700 600 500 DC current gain hFE Collector current IC (mA) 50 hFE – IC 100 400 40 300 30 200 VCE = 10 V Tc = 100°C 30 25 10 −25 3 20 100 1 0.1 10 1 Collector current IC IB = 50 μA 0 2 10 6 4 Collector-emitter voltage 8 VCE (V) VCE (sat) – IC IC – VBE 60 Common emitter Common emitter IC/IB = 5 VCE = 10 V (mA) 50 200 Collector current IC Collector-emitter saturation voltage VCE (sat) (mV) (mA) 10 280 240 100 160 Tc = 100°C 120 25 80 −25 40 30 20 Tc = 100°C 10 40 0 0 10 20 30 Collector current IC 40 0 0 50 0.2 (mA) −25 25 0.6 0.4 0.8 Base-emitter voltage 1.0 1.2 1.4 VBE (V) Safe Operating Area 500 PC – Ta 300 0.6 0.4 0.2 0 0 40 80 120 160 200 (mA) 0.8 100 Collector current IC Collector current IC (mA) 1.0 30 IC max (pulsed)* 50 DC operation Ta = 25°C 10 100 ms* 10 ms* 5 3 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated 1 linearly with increase in temperature. 1 240 Ambient temperature Ta (°C) 100 μs* IC max (continuous) 1 ms* 3 10 VCEO max 30 Collector-emitter voltage 3 100 300 1000 VCE (V) 2006-11-10 2SC5122 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2006-11-10