TOSHIBA TLP250INV

TLP250(INV)
TOSHIBA PHOTOCOUPLER GaAlAs IRED & PHOTO-IC
TLP250(INV)
Unit in mm
TRANSISTOR INVERTER
INVERTERS FOR AIR CONDITIONER
IGBT GATE DRIVE
POWER MOS FET GATE DRIVE
The TOSHIBA TLP250(INV) consists of a GaAlAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP.
TLP250(INV) is suitable for gate driving circuit of IGBT or power MOS FET.
l Input Threshold Current
: IF=5mA(MAX)
l Supply Current(ICC)
: 11mA(MAX)
l Supply Voltage(VCC)
: 10~35V
l Output Current(IO)
: ±2.0A(MAX)
l Switching Time(tpLH/tpHL) : 0.5µs(MAX)
l Isolation Voltage
: 2500Vrms
l UL Recognized
: UL1577,File No.E67349
TOSHIBA
Weight: 0.54 g
l Option(D4)
11−10C4
VDE Approved : DIN VDE0884/06.92 Certificate No.76823
Maximum Operating Insulation Voltage : 630VPK
Highest Permissible Over Voltage
: 4000VPK
(Note):When a VDE0884 approved type is needed,
Please designate the “Option(D4)”
l Creepage Distance
Clearance
: 6.4mm(MIN)
: 6.4mm(MIN)
TRUTH TABLE
INPUT LED
PIN CONFIGURATION(TOP VIEW)
Tr 1
Tr 2
ON
ON
OFF
OFF
OFF
ON
SCHEMATIC
IF
ICC
(Tr1)
2+
VF
3-
8
7
IO 6
(Tr2)
A 0.1µF bypass capacitor must be
Connected between pin 8 and 5(See Note 5).
5
1
8
2
7
3
6
4
5
1:N.C.
2: ANODE
3:CATHODE
4:N.C.
5:GND
6:VO(OUTPUT)
7:VO
8:VCC
VCC
VO
VO
GND
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TLP250(INV)
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Forward Current
LED
Forward Current Derating (Ta≥70℃)
Peak Transient Forward Current
RATING
UNIT
IF
20
mA
∆IF /∆Ta
−0.36
mA /°C
IFPT
1
A
Reverse Voltage
VR
5
V
Junction Temperature
Tj
125
°C
“H” Peak
Output Current
“L” Peak
Output Current
DETECTOR
(Note 1)
SYMBOL
PW ≤2.5µs , f≤15 kHz
−1.5
IOPH
PW≤1.0µs , f≤15 kHz
PW≤2.5µs , f≤15 kHz
(Note 2)
IOPL
PW ≤1.0µs , f≤15 kHz
(Ta≤70°C)
Output Voltage
(Ta≤70°C)
Supply Voltage
+2.0
24
VCC
(Ta=85°C)
+1.5
35
VO
(Ta=85°C)
−2.0
35
24
A
A
V
V
Output Voltage Derating (Ta≥70°C)
∆VO /∆Ta
−0.73
V /°C
Supply Voltage Derating (Ta≥70°C)
∆VCC /∆Ta
−0.73
V /°C
Tj
125
°C
f
25
kHz
Operating Temperature Range
Topr
−20~85
°C
Storage Temperature Range
Tstg
−55~125
°C
Lead Soldering Temperature(10s)
Tsol
260
°C
BVS
2500
Vrms
Junction Temperature
Operating Frequency
(Note 3)
Isolation Voltage (AC,1min., R.H. ≤60%,Ta=25°C)
(Note 4)
(Note 1) : Pulse width PW≤1µs,300pps
(Note 2) : Exporenential Waveform
(Note 3) : Exporenential Waveform IOPH≤−1.0A (≤2.5µs) , IOPL≤+1.0A (≤2.5µs)
(Note 4) : Device considerd a two terminal device : pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8 shorted together.
(Note 5) : A ceramic capacitor(0.1µF) should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear
amplifier.Failure to provide the bypassing may impair the switching proparty.The total lead length between capacitor and
coupler should not exceed 1cm.
RECOMMENDED OPERATING CONDITIONS
CHARACTERISTIC
SYMBOL
MIN
TYP.
MAX
UNIT
Input Current, ON
IF (ON)
7
8
10
mA
Input Voltage, OFF
VF (OFF)
0
—
0.8
V
VCC
15
—
IOPH / IOPL
—
—
Topr
−20
25
Supply Voltage
Peak Output Current
Operating Temperature
2
30
20
±0.5
70
V
A
85
°C
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TLP250(INV)
ELECTRICAL CHARACTERISTICS (Ta = −20~70°C,Unless otherwise specified)
SYMBOL
TEST
CIRCUIT
VF
—
∆VF /∆Ta
Input Reverse Current
Input Capacitance
CHARACTERISTIC
MIN
TYP.
MAX
UNIT
IF = 10 mA, Ta = 25°C
—
1.6
1.8
V
—
IF = 10 mA
—
−2.0
—
mV /°C
IR
—
VR = 5 V, Ta = 25°C
—
—
10
µA
CT
—
V = 0, f = 1 MHz, Ta = 25°C
—
45
250
pF
“H” Level
IOPH
2
IF = 10 mA
V8−6 = 4 V
−1.0
−1.5
—
“L” Level
IOPL
1
IF = 0
V6−5 = 2.5 V
1.0
2
—
“H” Level
VOH
3
VCC1 = +15 V
VEE1 = −15 V
RL = 200Ω, IF = 5 mA
11
12.8
—
VCC1 = +15 V
VEE1 = −15 V
RL = 200Ω, VF = 0.8 V
—
−14.2
−12.5
IF = 10 mA
Ta = 25°C
—
7
—
IF = 10 mA
—
—
11
IF = 0 mA
Ta = 25°C
—
7.5
—
IF = 0 mA
—
—
11
VCC1 = +15 V
VEE1 = −15 V
RL = 200Ω, VO > 0V
—
1.2
5
mA
VCC1 = +15 V
VEE1 = −15 V
RL = 200Ω, VO < 0V
0.8
—
—
V
10
—
35
V
—
1.0
2.0
pF
1×1012
1014
—
Ω
Input Forward Voltage
Temperature Coefficient of
Forward Voltage
TEST CONDITION
VCC = 30 V
Output Current
Output Voltage
“L” Level
VOL
4
“H” Level
ICCH
—
(*1)
VCC = 30 V
Supply Current
“L” Level
Threshold Input
Current
L→H
ICCL
—
IFLH
—
Threshold Input
Voltage
H→L
VFHL
Supply Voltage
VCC
—
—
Capacitance (Input-Output)
CS
—
VS = 0, f = 1 MHz, Ta = 25°C
Resistance (Input-Output)
RS
—
VS = 500 V, Ta = 25°C
R.H.≤60%
A
V
mA
mA
(*) : All typical values are at Ta=25°C
(*1) : Duration of IO time ≤ 50µs
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TLP250(INV)
SWITCHING CHARACTERISTICS
CHARACTERISTIC
(Ta = −20~70°C,Unless otherwise specified)
TEST
CIRCUIT
SYMBOL
Propagation
L→H
tpLH
Delay Time
H→L
tpHL
Switching Time Dispersion
IF = 8 mA,
|tpHL-tpLH|
between ON and OFF
Output Rise Time
tr
Output Fall Time
tf
Common Mode Transient
RL = 20Ω, CL = 10nF
Fig.1 IOPL TEST CIRCUIT
MAX
0.05
0.15
0.5
0.05
0.15
0.5
—
—
0.45
—
—
—
—
UNIT
µs
VCM = 1000 V, IF = 8 mA
VCC = 30 V, Ta = 25°C
−15000
—
—
V /µs
VCM = 1000 V, IF = 0 mA
VCC = 30 V, Ta = 25°C
15000
—
—
V /µs
Fig.2 IOPH TEST CIRCUIT
8
8
1
0.1µA
0.1µA
A
VCC
A
IOPH
4
V6-5
4
Fig.3 VOH TEST CIRCUIT
VCC
V8-6
↑
IOPL
Fig.4 VOL TEST CIRCUIT
8
1
0.1µA
IF
TYP.
VCC = 15 V
CML
Immunity at Low Level Output
1
MIN
6
Common Mode Transient
1
5
CMH
Immunity at High Level Output
TEST CONDITION
↑
RL
V
VCC1
8
0.1µA
VF
RL
V
VOH
VCC1
VOL
4
4
VEE1
VEE1
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2002-06-27
TLP250(INV)
Fig.5 tpLH、tpHL、tr、tf TEST CIRCUIT
8
1
IF
IF
0.1µF
RL CL
4
tf
tr
VO
VCC
90%
50%
10%
VO
5
tpHL
tpLH
Fig.6 CMH , CML TEST CIRCUIT
IF
SW
A
8
1
0.1µF
B
VCC
VO
4
VCM
+
VCM
10%
1000V
90%
tr
tf
SW : A(IF=8mA)
VO
3V
SW : B(IF=0mA)
CMH
CMH =
800(V)
tf(µs)
CML
CML =
800(V)
tr(µs)
26V
CML(CMH) is the maximum rate of rise(fall) of the common mode voltage that can be
sustained with the output voltage in the low(high)state.
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TLP250(INV)
RESTRICTIONS ON PRODUCT USE
000707EBC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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