FAIRCHILD KSA1943

KSA1943
KSA1943
Audio Power Amplifier
•
•
•
•
High Current Capability IC = -13A
High Power Dissipation
Wide S.O.A
Complement to KSC5200
TO-264
1
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Ratings
-230
Units
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
-230
-5
V
V
IC
Collector Current
-13
A
IB
Base Current
-1.5
A
PC
Collector Dissipation (TC=25°C)
130
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 50 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=-5mA, IE=0
Min.
-230
Typ.
Max.
Units
V
-230
V
-5
V
BVCEO
Collector-Emitter Breakdown Voltage
IC=-10mA, RBE=∞
BVEBO
Emitter-Base Breakdown Voltage
IE=-5mA, IC=0
ICBO
Collector Cut-off Current
VCB=-230V, IE=0
-5.0
µA
IEBO
Emitter Cut-off Current
VEB=-5V, IC=0
-5.0
µA
hFE1
* DC Current Gain
VCE=-5V, IC=-1A
55
hFE2
DC Current Gain
VCE=-5V, IC=-7A
35
VCE(sat)
Collector-Emitter Saturation Voltage
IC=-8A, IB=-0.8A
-0.4
-3.0
V
VBE(on)
Base-Emitter ON Voltage
VCE=-5V, IC=-7A
-1.0
-1.5
V
fT
Current Gain Bandwidth Product
VCE=-5V, IC=-1A
30
MHz
Cob
Output Capacitance
VCB=-10V, f=1MHz
360
pF
160
60
* Pulse Test : PW=20us
*hFE Classification
Classification
R
O
hFE1
55 ~ 110
80 ~ 160
©2001 Fairchild Semiconductor Corporation
Rev. B1, Septmeber 2001
KSA1943
Typical Characteristics
IB = -900mA
IB = -800mA
IB = -1A
Ic[mA], COLLECTOR CURRENT
-18
IB = -700mA
IB = -600mA
IB = -500mA
mA
IB = -400
-16
-14
-12
IB = -300mA
-10
IB = -200mA
-8
IB = -100mA
-6
-4
VCE = -5V
hFE, DC CURRENT GAIN
-20
100
10
-2
-0
-2
-4
-6
-8
1
0.1
-10
1
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VCE(sat)[V], SATURATION VOLTAGE
10
14
IC = 10 IB
IC[A], COLLECTOR CURRENT
12
1
0.1
0.01
1E-3
0.01
0.1
1
VCE = 5V
10
8
6
4
2
0
0.0
10
0.2
0.4
Figure 3. Collector-Emitter Saturation Voltage
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
VBE[V], BASE-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 4. Collector-Emitter Saturation Voltage
-100
160
IC MAX. (Pulsed*)
-10
IC MAX. (DC)
100ms*
DC
-1
-0.1
*SINGLE NONREPETITIVE
PC[W], POWER DISSIPATION
140
10ms*
IC [A], COLLECTOR CURRENT
10
120
100
80
60
40
20
o
PULSE TC=25[ C]
0
-0.01
1
10
100
0
25
50
75
100
125
150
175
o
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
TC[ C], CASE TEMPERATURE
Figure 6. Power Derating
Rev. B1, Septmeber 2001
KSA1943
Package Demensions
(8.30)
(1.00)
(2.00)
(7.00)
20.00 ±0.20
2.50 ±0.10
4.90 ±0.20
(1.50)
(1.50)
2.50 ±0.20
3.00 ±0.20
(1.50)
20.00 ±0.50
(7.00)
(2.00)
(11.00)
1.50 ±0.20
)
.20
.00
0 ±0
0)
2.0
(R
(R1
(0.50)
ø3.3
(9.00)
(9.00)
(8.30)
(4.00)
20.00 ±0.20
6.00 ±0.20
TO-264
+0.25
1.00 –0.10
+0.25
0.60 –0.10
2.80 ±0.30
(2.80)
5.45TYP
[5.45 ±0.30]
(0.15)
(1.50)
3.50 ±0.20
5.00 ±0.20
5.45TYP
[5.45 ±0.30]
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. B1, Septmeber 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
reasonably expected to cause the failure of the life support
or (b) support or sustain life, or (c) whose failure to perform
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H4