SeCoS MMBT3906T General purpose transistor Datasheet

MMBT3906T
PNP Silicon
General Purpose Transistors
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-523
FEATURES


Simplifies Circuit Design.
We Declare that the material of product compliance with
RoHS requirements.
ORDERING INFORMATION
Device
Marking
Shipping
MMBT3906T
2A
3000/Tape&Reel
REF.
A
B
C
D
G
J
Millimeter
Min.
Max.
1.50
1.70
0.75
0.95
0.60
0.80
0.23
0.33
0.50BSC
0.10
0.20
REF.
K
M
N
S
Millimeter
Min.
Max.
0.30
0.50
o
--10
o
--10
1.50
1.70
MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector - Emitter Voltage
VCEO
-40
Vdc
Collector - Base Voltage
VCBO
-40
Vdc
Emitter - Base Voltage
VEBO
-5.0
Collector Current - Continuous
IC
-200
Vdc
mAdc
Total Device Dissapation FR-4 Board(1)
TA=25℃, Derate above 25℃
PD
200
mW
1.6
mW/℃
600
℃/W
300
mW
2.4
mW/℃
RθJA
400
℃/W
TJ, TSTG
-55 ~ 150
℃
Thermal Resistance, Junction to Ambient
RθJA
Total Device Dissapation FR-4 Board(2)
TA=25℃, Derate above 25℃
PD
Thermal Resistance, Junction to Ambient
Junction & Storage Temperature
1.
FR-4 Minimum Pad.
2.
FR-4 1.0 X 1.0 Inch Pad.
3.
Pulse Test:Pulse Width ≦ 300 µs, Duty Cycle ≦ 2.0%.
DEVICE MARKING
MMBT3906T = 2A
http://www.SeCoSGmbH.com/
12-Apr-2010 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 5
MMBT3906T
PNP Silicon
General Purpose Transistors
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
CHARACTERISTIC
SYMBOL
MIN.
MAX.
UNIT
TEST CONDITIONS
Off Characteristics
Collector-Emitter Breakdown Voltage(3)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(1)
Collector-Emitter Saturation Voltage(3)
Base-Emitter Saturation Voltage(3)
Curren-Gain-Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedancen
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
Noise Figure
Delay Time
Rise Time
Storage Time
Fall Time
3.
V(BR)CEO
Vdc
-40
V(BR)CBO
Vdc
-40
V(BR)EBO
Vdc
-5.0
IBL
-50
nAdc
ICEX
-50
nAdc
On Characteristics(3)
60
80
hFE
100
300
60
30
-0.25
VCE(sat)
Vdc
-0.4
-0.65
-0.85
VBE(sat)
Vdc
-0.95
Small-Signal Characteristics
IC = -1.0 mAdc, IB = 0
IC = -10 µAdc, IE = 0
IE = -10 µAdc, IC = 0
VCE = -30 Vdc, VEB = -3.0 Vdc
VCE = -30 Vdc, VBE = -3.0 Vdc
IC = -0.1 mAdc, VCE = -1.0 Vdc
IC = -1.0 mAdc, VCE = -1.0 Vdc
IC = -10 mAdc, VCE = -1.0 Vdc
IC = -50 mAdc, VCE = -1.0 Vdc
IC = -100 mAdc, VCE = -1.0 Vdc
IC = -10 mAdc, IB = -1.0 mAdc
IC = -50 mAdc, IB = -5.0 mAdc
IC = -10 mAdc, IB = -1.0 mAdc
IC = -50 mAdc, IB = -5.0 mAdc
VCE = -20 Vdc, IC = -10 mAdc,
f = 100 MHz
Cobo
4.5
pF
VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz
Cibo
10
pF
VBE = -0.5 Vdc, IE = 0, f = 1.0 MHz
VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0
hie
2.0
12
pF
kHz
VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0
hre
0.1
10
X10-4
kHz
VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0
hfe
100
400
kHz
V = -10 Vdc, IC = -1.0 mAdc, f = 1.0
*hoe
3.0
60
µmhos CE
kHz
VCE = -5.0 Vdc, IC = -100 µAdc,
NF
4.0
dB
RS = 1.0k f = 1.0 kHz
Switching Characteristics
Td
35
nS
VCC = -3.0 Vdc, VBE = 0.5 Vdc, IC = -10
mAdc, IB1 = -1.0 mAdc
Tr
35
nS
TS
225
nS
VCC = -3.0 Vdc, IC = -10 mAdc,
IB1 = IB2 = -1.0 mAdc
TF
75
nS
fT
250
-
MHz
Pulse Test:Pulse Width ≦ 300 μs, Duty Cycle≦ 2.0%.
http://www.SeCoSGmbH.com/
12-Apr-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 5
MMBT3906T
Elektronische Bauelemente
PNP Silicon
General Purpose Transistors
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
12-Apr-2010 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 5
MMBT3906T
Elektronische Bauelemente
PNP Silicon
General Purpose Transistors
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
12-Apr-2010 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 5
MMBT3906T
Elektronische Bauelemente
PNP Silicon
General Purpose Transistors
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
12-Apr-2010 Rev. A
Any changes of specification will not be informed individually.
Page 5 of 5
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