IXYS IXGP16N60C2 Hiperfasttm igbt c2-class high speed igbt Datasheet

Advance Technical Information
HiPerFASTTM IGBT
C2-Class High Speed
IGBT
IXGA
IXGP
IXGA
IXGP
16N60C2
16N60C2
16N60C2D1
16N60C2D1
VCES
IC25
VCE(sat)
= 600 V
= 40 A
= 3.0 V
= 35 ns
tfi(typ)
D1
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
40
A
IC110
TC = 110°C
16
A
ID110
TC = 110°C (IXG_16N60C2D1 diode)
ICM
TC = 25°C, 1 ms
SSOA
(RBSOA)
VGE = 15 V, TJ = 125°C, RG = 22 Ω
Clamped inductive load
PC
TC = 25°C
11
A
100
A
ICM = 32
@0.8 VCES
A
150
W
-55 ... +150
°C
150
°C
Tstg
-55 ... +150
°C
Md
Weight
Mounting torque
(M3.5 screw)
G
0.55/5 Nm/lb.in.
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
Maximum tab temperature
soldering SMD devices for 10s
260
°C
4
2
g
g
z
z
VGE(th)
IC = 250 µA, VCE = VGE
ICES
VCE = VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC = 12 A, VGE = 15 V
Note 2
© 2004 IXYS All rights reserved
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
2.5
16N60C2
16N60C2D1
TJ=125°C
2.1
5.0
V
25
50
µA
µA
±100
nA
3.0
V
V
C (TAB)
C = Collector
TAB = Collector
Very high frequency IGBT
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
z
Test Conditions
C (TAB)
Features
z
Symbol
C E
G = Gate
E = Emitter
z
TO-220
TO-263
C
TO-220 (IXGP)
G
TJM
TJ
TO-263 (IXGA)
z
z
z
z
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
z
z
High power density
Very fast switching speeds for high
frequency applications
DS99142A(3/04)
IXGP 16N60C2 IXGA 16N60C2D1
IXGA 16N60C2 IXGA 16N60C2D1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = 12A; VCE = 10 V,
Note 2.
12
S
Cies
VCE = 25 V, VGE = 0 V, f = 1 MHz
720
pF
55
65
pF
pF
19
pF
32
nC
Qge
6
nC
Qgc
10
nC
25
ns
15
ns
Coes
8
16N60C2
16N60C2D1
Cres
Qg
td(on)
tri
td(off)
tfi
IC = 20A, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°°C
IC = 12 A; VGE = 15 V
VCE = 400 V; RG = Roff = 22 Ω
Note 1.
60
35
Eoff
td(on)
tri
Eon
td(off)
tfi
60
16N60C2D1
Note 1
Eoff
RthJC
RthCK
(IXGP)
ns
Pins: 1 - Gate
3 - Emitter
2 - Collector
4 - Collector
ns
100
25
Inductive load, TJ = 125°°C
IC = 12A; VGE = 15 V
VCE = 400 V; RG = Roff = 22 Ω
120
TO-220 Outline
µJ
ns
18
ns
0.38
mJ
120
ns
70
ns
150
µJ
0.5
0.83 K/W
K/W
TO-263 Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF = 10 A, VGE = 0 V
TJ = 125 °C
2.66
1.66
IRM
t rr
IF = 12 A; -diF/dt = 100 A/µs, VR = 100 V
VGE = 0 V; TJ = 125 °C
t rr
IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V
2.5
110
A
ns
30
ns
2.5 K/W
RthJC
Notes:
V
1. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ,
or increased RG.
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
=
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