ON MJW18020 Npn silicon power transistors high voltage planar Datasheet

MJW18020
NPN Silicon Power
Transistors High Voltage
Planar
The MJW18020 planar High Voltage Power Transistor is
specifically Designed for motor control applications, high power
supplies and UPS’s for which the high reproducibility of DC and
Switching parameters minimizes the dead time in bridge
configurations.
Features
•
•
•
•
•
High and Excellent Gain Linearity
Fast and Very Tight Switching Times Parameters tsi and tfi
Very Stable Leakage Current due to the Planar Structure
High Reliability
Pb−Free Package is Available*
Symbol
Value
Unit
Collector−Emitter Sustaining Voltage
VCEO
450
Vdc
Collector−Base Breakdown Voltage
VCES
1000
Vdc
Collector−Base Voltage
VCBO
1000
Vdc
Emitter−Base Voltage
VEBO
9.0
Vdc
Collector Current − Continuous
− Peak (Note 1)
IC
30
45
Adc
Base Current
IB
6.0
10
Adc
PD
250
2.0
W
W/_C
TJ, Tstg
−65 to +150
_C
− Continuous
− Peak (Note 1)
Total Power Dissipation @ TC = 25_C
Derate Above 25_C
Operating and Storage Junction
Temperature Range
30 AMPERES
1000 VOLTS BVCES
450 VOLTS BVCEO, 250 WATTS
1
MAXIMUM RATINGS
Rating
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2
MARKING DIAGRAM
MJW18020
AYWWG
1 BASE
3 EMITTER
2 COLLECTOR
THERMAL CHARACTERISTICS
Characteristic
TO−247
CASE 340L
3
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
0.5
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
50
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8” from Case for 5 Seconds
TL
275
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJW18020
TO−247
30 Units/Rail
TO−247
(Pb−Free)
30 Units/Rail
MJW18020G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
March, 2010 − Rev. 2
1
Publication Order Number:
MJW18020/D
MJW18020
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
VCEO(sus)
450
−
−
Vdc
Collector Cutoff Current
(VCE = Rated VCEO, IB = 0)
ICEO
−
−
100
mAdc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 125°C)
ICES
−
−
100
500
mAdc
Emitter Cutoff Current
(VCE = 9 Vdc, IC = 0)
IEBO
−
−
100
mAdc
hFE
14
−
8
5
5.5
4
14
30
16
14
9
7
25
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 10 Adc VCE = 2 Vdc)
(IC = 20 Adc VCE = 2 Vdc)
(IC = 10 mAdc VCE = 5 Vdc)
(TC = 125°C)
(TC = 125°C)
(TC = 125°C)
Base−Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc)
(IC = 20 Adc, IB = 4 Adc)
VBE(sat)
Collector−Emitter Saturation Voltage
(IC = 10 Adc, IB = 2 Adc)
VCE(sat)
34
−
−
−
−
−
−
0.97
1.15
1.25
1.5
−
−
−
−
0.2
0.3
0.5
0.9
0.6
−
1.5
2.0
fT
−
13
−
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
−
300
500
pF
Input Capacitance
(VEB = 8.0)
Cib
−
7000
9000
pF
tOn
−
540
750
ns
Storage Time
ts
−
4.75
6
ms
Fall Time
tf
−
380
500
ns
tOff
−
5.2
6.5
ms
tOn
−
965
1200
ns
ts
−
2.9
3.5
ms
tf
−
350
500
ns
tOff
−
3.25
4
ms
tfi
−
142
250
ns
Storage Time
tsi
−
4.75
6
ms
Crossover Time
tc
−
320
500
ns
tfi
−
350
500
ns
Storage Time
tsi
−
3.0
3.5
ms
Crossover Time
tc
−
500
750
ns
(TC = 125°C)
(IC = 20 Adc, IB = 4 Adc)
(TC = 125°C)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
SWITCHING CHARACTERISTICS: Resistive Load (D.C. = 10%, Pulse Width = 70 ms)
Turn−On Time
(IC = 10 Adc, IB1 = IB2 = 2 Adc,
Vcc = 125 V)
Turn−Off Time
Turn−On Time
Storage Time
(IC= 20 Adc, IB1 = IB2 = 4 Adc,
Vcc = 125 V)
Fall Time
Turn−Off Time
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp= 300 V , Vcc = 15 V, L = 200 mH)
Fall Time
Fall Time
(IC = 10 Adc, IB1 = IB2 = 2 Adc)
(IC = 20 Adc, IB1 = IB2 = 4 Adc)
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2
MJW18020
TYPICAL CHARACTERISTICS
100
TJ = 25°C
TJ = 125°C
HFE, DC CURRENT GAIN
HFE, DC CURRENT GAIN
100
TJ = −20°C
10
VCE = 2.0 V
1.0
0.01
0.1
1.0
10
TJ = −20°C
10
VCE = 5.0 V
1.0
0.01
100
0.1
IC, COLLECTOR CURRENT (A)
100
100.0
Ic/Ib = 10
VCE, VOLTAGE (VOLTS)
Ic/Ib = 5.0
VCE, VOLTAGE (VOLTS)
10
Figure 2. DC Current Gain, VCE = 5.0 V
100.0
10.0
10.0
1.0
TJ = −20°C
TJ = 125°C
0.1
0.0
0.001
0.1
1.0
TJ = −20°C
TJ = 125°C
0.1
TJ = 25°C
TJ = 25°C
0.01
1.0
10
0.0
0.001
100
IC, COLLECTOR CURRENT (A)
0.01
0.1
1.0
10
100
IC, COLLECTOR CURRENT (A)
Figure 3. Typical Collector−Emitter Saturation
Voltage, IC/IB = 5.0
Figure 4. Typical Collector−Emitter Saturation
Voltage, IC/IB = 10
10.0
10.0
Ic/Ib = 10
VBE, VOLTAGE (VOLTS)
Ic/Ib = 5.0
VBE, VOLTAGE (VOLTS)
1.0
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain, VCE = 2.0 V
TJ = −20°C
1.0
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
0.1
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
TJ = −20°C
1.0
TJ = 25°C
TJ = 125°C
0.1
0.001
100
Figure 5. Typical Base−Emitter Saturation
Voltage, IC/IB = 5.0
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
Figure 6. Typical Base−Emitter Saturation
Voltage, IC/IB = 10
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3
100
MJW18020
TYPICAL CHARACTERISTICS
IC, COLLECTOR CURRENT (AMPS)
100.00
Cib
1000
Cob
100
1
10
100
1.0 ms
Extended SOA
DC
10.00
10000
10 ms
5 ms
1 ms
1.00
0.10
0.01
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 8. Forward Bias Safe Operating Area
40
TC v 125°C
Ic/Ib > 4
LC = 500 mH
30
20
−1.5 V
10
−5 V
VBE = 0 V
0
0
200
1000
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. Typical Capacitance
IC, COLLECTOR CURRENT (AMPS)
C, CAPACITANCE (pF)
100000
400
600
800
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 9. Reverse Bias Safe Operating Area
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4
1000
MJW18020
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE E
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
N
L
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
F 2 PL
W
J
M
Y Q
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
H
G
D 3 PL
0.25 (0.010)
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
S
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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