TLP251 TOSHIBA Photocoupler GaAℓAs Ired & Photo-IC TLP251 Inverter For Air Conditioner Induction Heating Transistor Inverter Power MOS FET Gate Drive IGBT Gate Drive Unit in mm The TOSHIBA TLP251 consists of a GaAℓAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP package. TLP251 is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP251 is capable of “direct” gate drive of lower power IGBTs. (~15A) z Input threshold current: IF=5mA(max.) z Supply current (ICC): 11mA(max.) TOSHIBA 11−10C4 Weight: 0.54g(typ.) z Supply voltage (VCC): 10−35V z Output current (IO): ±0.4A(max.) z Switching time (tpLH / tpHL): 1μs(max.) z Isolation voltage: 2500Vrms(min.) z UL recognized: UL1577, file no.E67349 Pin Configuration (top view) z Option(D4) VDE Approved : DIN EN60747-5-2 Maximum Operating Insulation Voltage : 890VPK Highest Permissible Over Voltage : 4000VPK 1 8 2 7 3 6 4 5 (Note):When a EN60747-5-2 approved type is needed, Please designate “Option(D4)” Truth Table Tr1 Tr2 Input On On Off LED Off Off On 1 : N.C. 2 : Anode 3 : Cathode 4 : N.C. Schematic 5 : GND 6 : VO (Output) 7 : N.C. 8 : VCC ICC 8 IF 2 VF 3 (Tr 1) 6 VO IO (Tr 2) GND 5 A 0.1μF bypass capcitor must be connected between pin 8 and 5(see Note 5). 1 VCC 2007-10-01 TLP251 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 20 mA ΔIF / ΔTa − 0.36 mA / °C IFPT 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C IOPH − 0.4 A IOPL 0.4 A Forward current LED Forward current derating Peak transient forward current (Ta ≥ 70°C) (Note 1) “H” peak output current (PW ≤ 2.0μs, f ≤ 15kHz) (Note 2) “L” peak output current (PW ≤ 2.0μs, f ≤ 15kHz) Detector (Note 2) Output voltage Supply voltage (Ta ≤ 70°C) (Ta = 85°C) (Ta ≤ 70°C) (Ta = 85°C) Output voltage derating VO VCC 35 V 24 35 V 24 ΔVO / ΔTa − 0.73 V / °C ΔVCC / ΔTa − 0.73 V / °C Tj 125 °C f 25 kHz Operating temperature range Topr −20~85 °C Storage temperature range Tstg −55~125 °C Lead soldering temperature(10s) Tsol 260 °C BVS 2500 Vrms (Ta ≥ 70°C) Supply voltage derating (Ta ≥ 70°C) Junction temperature Operating frequency (Note 3) Isolation voltage (AC, 1min., R.H.≤ 60%) (Note 4) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width PW ≤ 1μs, 300pps Note 2: Expornential waveform Note 3: Expornential waveform, IOPH ≤ −0.25A(≤ 2.0μs), IOPL ≤ +0.25A(≤2.0μs) Note 4: Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted together. Note 5: A ceramic capacitor(0.1μF)should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear ampifier. Failure to provide the bypassing may impair the swiching property.The total lead length between capacitor and coupler should not exceed 1cm. 2 2007-10-01 TLP251 Recommended Operating Conditions Characteristic Input current, on (Note6) Input voltage, off Symbol Min. Typ. Max. Unit IF(ON) 7 8 10 mA VF(OFF) 0 ― 0.8 V VCC 10 ― IOPH / IOPL ― ― Topr −20 25 Supply voltage Peak output current Operating temperature 30 20 ±0.1 70 V A 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note 6: Input signal rise time(fall time)<0.5μs. Electrical Characteristics (Ta = −20~70°C, unless otherwise specified) Symbol Test Cir− cuit VF ― ΔVF / ΔTa Input reverse current Input capacitance Characteristic Min. Typ.* Max. Unit IF = 10 mA , Ta = 25°C ― 1.6 1.8 V ― IF = 10 mA ― −2.0 ― mV / °C IR ― VR = 5V, Ta = 25°C ― ― 10 μA CT ― V = 0 , f = 1MHz , Ta = 25°C ― 45 250 pF IOPH 1 IF = 10mA V8−6 = 4V −0.1 −0.25 ― “L” level IOPL 2 IF =0 V6−5 = 2.5V 0.1 0.2 ― “H” level VOH 3 VCC1 = +15V, VEE1 = −15V RL = 200Ω, IF = 5mA 11 13.2 ― “L” level VOL 4 VCC1 = +15V, VEE1 = −15V RL = 200Ω, VF = 0.8V ― −14.5 −12.5 “H” level ICCH ― VCC = 30V, IF = 10mA Ta = 25°C ― 7.5 ― VCC = 30V, IF = 10mA ― ― 11 VCC = 30V, IF = 0mA Ta = 25°C ― 8 ― VCC = 30V, IF = 0mA ― ― 11 Input forward voltage Temperature coefficient of forward voltage “H” level VCC=30V (*1) Output current Output voltage Supply current “L” level Threshould input current “Output Threshold input voltage “Output ICCL Test Condition ― A V mA IFLH ― VCC1 = +15V, VEE1 = −15V RL = 200Ω, VO > 0V ― 1.2 5 mA VFHL ― VCC1 = +15V, VEE1 = −15V RL = 200Ω, VO < 0V 0.8 ― ― V Supply voltage VCC ― 10 ― 35 V Capacitance (input−output) Cs ― Vs = 0 , f = 1MHz Ta = 25℃ ― 1.0 2.0 pF Resistance (input−output) Rs ― Vs = 500V, Ta = 25℃ R.H. ≤ 60% ― Ω L → H” H → L” * All typical values are at Ta=25°C 1×10 12 10 14 (*1): Duration of IO time ≤ 50μs 3 2007-10-01 TLP251 Switching Characteristics (Ta = −20~70°C, unless otherwise specified) Characteristic Propagation delay time Test Cir− cuit Symbol L→H Test Condition tpLH H→L IF = 8mA tpHL Output rise time tr Output fall time tf Common mode transient immunity at high level output Common mode transient immunity at low level output 5 VCC1 = +15V, VEE1 = −15V RL = 200 Ω CMH 6 VCM = 600V, IF = 8mA, VCC = 30V, Ta = 25℃ VCM = 600V, IF = 0mA, CML VCC = 30V, Ta = 25℃ Min. Typ.* Max. Unit ― 0.25 1.0 ― 0.25 1.0 ― ― ― ― ― ― −5000 ― ― V / μs 5000 ― ― V / μs μs *All typical values are at Ta=25℃ Test Circuit 1 : IOPH Test Circuit 2 : IOPL 8 8 1 1 VCC 0.1μF 0.1μF V8-6 IF IOPH 4 VCC A A IOPL 4 Test Circuit 3 : VOH V6-5 Test Circuit 4 : VOL 8 8 1 1 VCC1 0.1μF IF VCC1 0.1μF VF RL RL V VOH V 4 VOL 4 VEE1 VEE1 4 2007-10-01 TLP251 Test Circuit 5: tpLH, tpHL, tr, tf 8 IF IF 0.1μF tr tf VCC1 VOH VO RL VO GND VOL tpLH 100Ω 80% 80% tpHL VEE1 Test Circuit 6: CMH, CML 8 1 SW IF A 0.1μF VCC B VO 4 VCM + - 600V VCM 90% 10% tf tr CML = 480(V) tr (μs ) CMH = 480(V) t f (μs) SW: A(IF = 8mA) CMH VO 3V SW: B(IF = 0) 26V CHL CML (CMH) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output voltage in the low (high) state. 5 2007-10-01 TLP251 IF – V F Forward current IF (mA) 50 30 ΔVF /ΔVF – IF －2.6 Ta = 25 °C －2.4 Forward voltage temperature coefficient ΔVF /ΔTa (mV/°C) 100 10 5 3 －2.2 1 －2.0 0.5 0.3 －1.8 0.1 0.05 0.03 0.01 1.0 －1.6 1.4 1.2 1.8 1.6 Forward voltage －1.4 0.1 2.0 1 0.3 0.5 VF (V) 3 Forward current IF – Ta 5 30 10 IF (mA) VCC – Ta 40 Allowable supply voltage VCC (mA) 30 20 IF Allowable forward current (V) 40 10 0 0 20 40 60 30 20 10 0 80 100 0 Ambient temperature Ta (°C) 20 40 60 80 100 Ambient temperature Ta (°C) IOPH, IOPL – Ta Allowable peak output current IOPH, IOPL (A) 0.5 PW ≤ 2.0 μs, f ≤15 KHz 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 Ambient temperature Ta (°C) 6 2007-10-01 TLP251 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-10-01