Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA950 TRANSISTOR (PNP) TO-92 FEATURE Power dissipation 1. EMITTER PCM : 0.6 W (Tamb=25℃) 2. COLLECTOR Collector current A ICM : -0.8 Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range Tj, Tstg: 3. BASE 1 2 3 -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -1mA , IE=0 -35 V Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA , IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE= -1Ma, IC=0 -5 V Collector cut-off current ICBO VCB= -35V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 µA hFE(1) VCE=-1V, IC=-100mA 100 hFE(2) VCE=-1V, IC= -700mA 35 VCE(sat) IC= -500mA, IB= -20mA 320 DC current gain Collector-emitter saturation voltage Cob Collector Output Capacitance fT Transition frequency VCB=-10V, IE=0 f=1MHZ VCE=-5V, IC=-10mA, -0.7 V 19 pF 120 MHz CLASSIFICATION OF hFE(1) Rank O Y Range 100-200 160-320