isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL59 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 2A ·High Speed Switching APPLICATIONS ·Designed for use in lighting applications and low cost switchmode power supplies. 9 n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT 850 V s c s i . w w w 400 V V IC Collector Current-Continuous 8 A ICM Collector Current-peak 16 A IB Base Current-Continuous 4 A IBM Base Current-Peak 8 A PC Collector Power Dissipation TC=25℃ 90 W Ti Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.39 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL59 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; L= 25mH VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A ;IB= 0.4A 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A ;IB= 1A 1.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2A ;IB= 0.4A 1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 5A ;IB= 1A 1.6 V ICES Collector Cutoff Current VCE= RatedVCES;VBE=0 VCE= RatedVCES;VBE=0,TC= 125℃ 0.2 0.5 mA IEBO Emitter Cutoff Current VEB= 9V; IC= 0 0.1 mA hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-3 DC Current Gain ts Storage Time tf Fall Time isc Website：www.iscsemi.cn TYP. MAX 400 n c . i m e s c s .i w w w Switching Times, Inductive Load MIN V IC= 2A; VCE= 5V 8 40 IC= 5A; VCE= 5V 6 30 IC= 8A; VCE= 10V 4 IC= 2A; VCC= 250V; IB(on)= 0.4A; RBB= 0Ω VBE(off)= -5V; L= 200μH UNIT 0.8 μs 0.15 μs