LIGITEK LBD1F1-25-XX Bar digit led display Datasheet

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
BAR DIGIT LED DISPLAY
LBD1F1/25-XX
DATA SHEET
DOC. NO
:
QW0905- LBD1F1/25-XX
REV.
:
B
DATE
: 11 - Feb. - 2006
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/7
PART NO. LBD1F1/25-XX
Package Dimensions
58.0(2.28")
56(2.20")
8.0(0.31")
1.6
A
5.0(2.0")
B
C
D
E
F
G
H
I
J
K
L
7.0(0.28")
4*1.5
4.3*11=47.3(1.86")
21.59(0.85")
21.59(0.85")
4.5±0.5
Ø0.51
TYP
2.54*6=
15.24(0.6")
2.54*6=
15.24(0.6")
PIN NO.1
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25(0.01") unless otherwise noted.
2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 2/7
PART NO.LBD1F1/25-XX
Internal Circuit Diagram
LBD1F15-XX
COM,1
A
2
B
3
D
C
4
COM,14
5
E
6
F
8
7
H
G
9
I
J
K
L
10 11 12 13
LBD1F25-XX
COM,1
A
2
B
3
D
C
4
COM,14
5
E
6
F
7
H
G
8
9
I
J
K
L
10 11 12 13
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO.LBD1F1/25-XX
Page 3/7
Electrical Connection
PIN NO.
LBD1F15-XX
PIN NO.
LBD1F25-XX
1
Common Cathode
1
Common Anode
2
Anode A
2
Cathode A
3
Anode B
3
Cathode B
4
Anode C
4
Cathode C
5
Anode D
5
Cathode D
6
Anode E
6
Cathode E
7
Anode F
7
Cathode F
8
Anode F
8
Cathode F
9
Anode F
9
Cathode F
10
Anode G
10
Cathode G
11
Anode A
11
Cathode A
12
Anode A
12
Cathode A
13
Anode F
13
Cathode F
14
Common Cathode
14
Common Anode
LIGITEK ELECTRONICS CO.,LTD.
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Page 4/7
PART NO.LBD1F1/25-XX
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
SR
Forward Current Per Chip
IF
30
mA
Peak Forward Current Per
Chip (Duty 1/10,0.1ms
Pulse Width)
IFP
100
mA
Power Dissipation Per Chip
PD
100
mW
Ir
10
μA
Operating Temperature
Topr
-25 ~ +85
℃
Storage Temperature
Tstg
-25 ~ +85
℃
Reverse Current Per Any Chip
Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃
Part Selection And Application Information(Ratings at 25℃)
common
cathode
Material Emitted or anode
CHIP
PART NO
△λ
(nm)
(nm)
Vf(v)
Iv(mcd)
IV-M
Min. Typ. Max. Min. Typ.
Common
Cathode
LBD1F15-XX
GaAlAs
LBD1F25-XX
Electrical
λP
660
Red
20
1.5
1.8
Common
Anode
Note : 1.The forward voltage data did not including ± 0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
2.4
5.0
8.5
2:1
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Page 5/7
PART NO.LBD1F1/25-XX
Test Condition For Each Parameter
Symbol
Unit
Test Condition
Forward Voltage Per Chip
Vf
volt
If=20mA
Luminous Intensity Per Chip
Iv
mcd
If=10mA
Peak Wavelength
λP
nm
If=20mA
△λ
nm
If=20mA
Ir
μA
Vr=5V
Parameter
Spectral Line Half-Width
Reverse Current Any Chip
Luminous Intensity Matching Ratio
IV-M
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PART NO.LBD1F1/25-XX
Page 6/7
Typical Electro-Optical Characteristics Curve
SR CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1.0
2.0
3.0
4.0
1.0
5.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
600
650
700
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
750
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO.LBD1F1/25-XX
Page 7/7
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5 ℃
2.RH=90 %~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hours.
1.Ta=105 ℃±5℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5 ℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5 ℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11
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