Hitachi HA1127P 5 transistor array Datasheet

HA1127, HA1127P, HA1127FP
5 Transistor Arrays
Pin Arrangement
503
HA1127, HA1127P, HA1127FP
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
HA1127
Unit
Collector base voltage
VCBO
20
V
Collector substrate voltage
VCIO
20
V
Collector emitter voltage
VCEO
15
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
50
mA
Allowable collector power
Allowable collector power
PC*
1
PC
300
mW
750*
2
625*
3
mW
Operating temperature
Topr
–55 to +125
°C
Storage temperature
Tstg
–55 to +125
°C
Notes: 1. Allowable value per individual transistor. This is the allowable value up to Ta = 25°C. Derate at
3 mW/°C above that temperature.
2. Allowable value for the whole package.
This is the allowable value up to Ta = 35°C for the HA1127P. Derate at 8.3 mW/°C above that
temperature.
3. See page 51.
504
HA1127, HA1127P, HA1127FP
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-base
breakdown voltage
V(BR)CBO
20
—
—
V
IC = 10 µA, IE = 0
Collector-emitter
breakdown voltage
V(BR)CEO
15
—
—
V
IC = 1 mA, R BE =
Collector-substrate
breakdown voltage
V(BR)CIO
20
—
—
V
IC = 10 µA, IE = 0, IB = 0
Emitter-base
breakdown voltage
V(BR)EBO
5
—
—
V
IE = 10 µA, IC = 0
Collector cutoff
current
ICBO
—
0.002 40
nA
VCB = 10 V, IE = 0
ICEO
—
—
0.5
µA
VCE = 10 V, R BE =
Collector-emitter
saturation voltage
VCE(sat)
—
0.17
—
V
IC = 10 mA, IB = 1 mA
Base-emitter
voltage
VBE
—
0.72
—
V
VCE = 3 V
—
0.80
—
V
DC current
amplification ratio
hFE
40
140
—
—
120
—
Gain-bandwidth
product
fT
—
460
—
MHz
VCE = 3 V, IC = 3 mA
Collector output
capacitance
Cob
—
1.7
—
pF
VCB = 3 V, IE = 0, f = 1 MHz
Emitter input
capacitance
Cin
—
2.0
—
pF
VCB = 3 V, IE = 0, f = 1 MHz
Switching time
ton
—
35
—
ns
VCC = 10 V, IC = 10IB1 = –10IB2 = 10 mA
toff
—
130
—
ns
tstg
—
75
—
ns
IC = 1 mA
IC = 10 mA
VEE = 3 V
IC = 1 mA
IC = 10 mA
505
HA1127, HA1127P, HA1127FP
506
HA1127, HA1127P, HA1127FP
507
HA1127, HA1127P, HA1127FP
508
HA1127, HA1127P, HA1127FP
509
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