BUV48, BUV48A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 15 A Continuous Collector Current ● 1000 Volt Blocking Capability SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BUV48 Collector-emitter voltage (VBE = 0 V) BUV48A BUV48 Collector-emitter voltage (RBE = 10 Ω) BUV48A BUV48 Collector-emitter voltage (IB = 0) BUV48A Continuous collector current Peak collector current (see Note 1) Continuous base current Peak base current VCES VCER VCEO VALUE 850 1000 850 1000 400 450 UNIT V V V IC 15 A ICM 30 A IB 4 A IBM 20 A Non repetitive accidental peak surge current ICSM 55 A Continuous device dissipation at (or below) 25°C case temperature Ptot 125 W Tj -65 to +150 °C Tstg -65 to +150 °C Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BUV48, BUV48A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES ICER IEBO VEBO VCE(sat) VBE(sat) ft Cob Collector-emitter sustaining voltage TEST CONDITIONS IC = 200 mA L = 25 mH MIN (see Note 2) BUV48 400 BUV48A 450 TYP MAX V VCE = 850 V VBE = 0 BUV48 0.2 Collector-emitter VCE = 1000 V VBE = 0 BUV48A 0.2 cut-off current VCE = 850 V VBE = 0 TC = 125°C BUV48 2.0 TC = 125°C VCE = 1000 V VBE = 0 BUV48A 2.0 VCE = 850 V RBE = 10 Ω BUV48 0.5 Collector-emitter VCE = 1000 V RBE = 10 Ω BUV48A 0.5 cut-off current VCE = 850 V RBE = 10 Ω TC = 125°C BUV48 4.0 VCE = 1000 V RBE = 10 Ω TC = 125°C BUV48A 4.0 VEB = 5V IC = 0 IE = 50 mA IC = 0 Emitter cut-off current Emitter-base breakdown voltage 7 mA mA 1 mA 30 V IB = 2A IC = 10 A BUV48 1.5 Collector-emitter IB = 3A IC = 15 A BUV48 5.0 saturation voltage IB = 1.6 A IC = 8A BUV48A 1.5 (see Notes 3 and 4) UNIT V IB = 2.4 A IC = 12 A BUV48A 5.0 Base-emitter IB = 2A IC = 10 A BUV48 1.6 saturation voltage IB = 1.6 A IC = 8A BUV48A 1.6 VCE = 10 V IC = 0.5 A f = 1 MHz 10 MHz VCB = 20 V IC = 0 f = 1 MHz 150 pF Current gain bandwidth product Output capacitance (see Notes 3 and 4) V NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC MIN TYP Junction to case thermal resistance MAX UNIT 1 °C/W MAX UNIT 1.0 µs 3.0 µs 0.8 µs 1.0 µs 3.0 µs 0.8 µs MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † ton Turn on time ts Storage time tf Fall time ton Turn on time ts Storage time tf Fall time TEST CONDITIONS † MIN IC = 10 A VCC = 150 V BUV48 IB(on) = 2 A IB(off) = -2 A (see Figures 1 and 2) IC = 8 A VCC = 150 V BUV48A IB(on) = 1.6 A IB(off) = -1.6 A (see Figures 1 and 2) TYP Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. inductive-load-switching characteristics at 100°C case temperature PARAMETER TEST CONDITIONS † tsv Voltage storage time IC = 10 A IB(on) = 2 A tfi Current fall time VBE(off) = -5 V (see Figures 3 and 4) tsv Voltage storage time IC = 8 A IB(on) = 1.6 A tfi Current fall time VBE(off) = -5 V (see Figures 3 and 4) MIN BUV48 BUV48A 2 TYP 4.0 µs 0.4 µs 4.0 µs 0.4 µs AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUV48, BUV48A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION +25 V BD135 680 µF 120 Ω T V1 100 Ω 100 µF 47 Ω tp V cc V=CC250 V TUT 15 Ω V1 100 Ω 680 µF 82 Ω BD136 tp = 20 µs Duty cycle = 1% V1 = 15 V, Source Impedance = 50 Ω Figure 1. Resistive-Load Switching Test Circuit C 90% 90% E IC A - B = td B - C = tr B E - F = tf 10% 10% F 0% D - E = ts A - C = ton D - F = t off 90% D dIB ≥ 2 A/µs dt IB I B(on) A 10% 0% I B(off) Figure 2. Resistive-Load Switching Waveforms AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BUV48, BUV48A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION 33 Ω +5V D45H11 BY205-400 33 Ω BY205-400 RB (on) 1 pF 180 µH V Gen 1 kΩ 68 Ω 0.02 µF vcc 2N2222 BY205-400 Vclamp = 400 V TUT 1 kΩ +5V 270 Ω BY205-400 5X BY205-400 1 kΩ 2N2904 Adjust pw to obtain IC D44H11 47 Ω For IC < 6 A VCC = 50 V For IC ≥ 6 A VCC = 100 V V 100 Ω BE(off) Figure 3. Inductive-Load Switching Test Circuit I B(on) A (90%) IB A - B = tsv Base Current B - C = trv D - E = tfi E - F = tti C B - E = txo V CE B 90% 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF. B. Resistors must be noninductive types. Figure 4. Inductive-Load Switching Waveforms 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUV48, BUV48A NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCP765AA 100 TC = 125°C TC = 25°C TC = -65°C VCE = 5 V hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 10 1·0 0·1 1·0 10 TCP765AB 5·0 IC = 5 A IC = 10 A IC = 15 A 4·0 TC = 25°C 3·0 2·0 1·0 0 0·1 20 1·0 IC - Collector Current - A IB - Base Current - A Figure 5. Figure 6. 4·0 BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT TCP765AI IC = 5 A IC = 10 A IC = 15 A TC = 100°C 3·0 2·0 1·0 0 0·1 1·5 IC = 15 A 1·4 1·3 IC = 10 A 1·2 1·1 1·0 IC = 5 A 0·9 0·8 1·0 10 IB - Base Current - A AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 0 1 2 3 4 5 6 IB - Base Current - A Figure 7. TCP765AC 1·6 VBE(sat) - Base-Emitter Saturation Voltage - V VCE(sat) - Collector-Emitter Saturation Voltage - V COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 5·0 10 Figure 8. 5 BUV48, BUV48A NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE TCP765AD ICES - Collector Cut-off Current - µA 4·0 1·0 BUV48A VCE = 1000 V 0·1 BUV48 VCE = 850 V 0·01 -80 -60 -40 -20 0 20 40 60 80 100 120 140 TC - Case Temperature - °C Figure 9. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAP765AA 10 1·0 0.1 0·01 1·0 tp = 10 µs tp = 50 µs tp = 100 µs tp = 500 µs tp = 1 ms tp = 2 ms DC Operation BUV48 BUV48A 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 10. 6 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUV48, BUV48A NPN SILICON POWER TRANSISTORS MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 15,2 14,7 ø 4,1 4,0 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 2 3 1,30 0,78 0,50 1,10 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. MDXXAW 7