MP6759 TOSHIBA GTR Module Silicon N Channel IGBT MP6759 Motor Control Applications High Power Switching Applications · The electrodes are isolated from case. · 6 IGBTs are built into 1 package. · Enhancement-mode · Low saturation voltage · High speed: tf = 0.35 µs (max) (IC = 10 A) Unit: mm : VCE (sat) = 2.7 V (max) (IC = 10 A) JEDEC ― JEITA ― TOSHIBA Weight: 44 g (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 10 1 ms ICP 20 IF 10 IFM 20 PC 40 W Tj 150 °C Storage temperature range Tstg −40 to 125 °C Isolation voltage VIsol Collector current Forward current DC 1 ms Collector power dissipation (Tc = 25°C) Junction temperature Screw torque 2-78A1A ― 2500 (AC 1 minute) 1.5 1 A A V N·m 2002-11-20 MP6759 Equivalent Circuit + GU (BU) GV (BV) GW (BW) U V W GX (BX) GY (BY) GZ (BZ) − Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 V ― ― ±200 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 V ― ― 1 mA Gate-emitter cut-off voltage VGE (off) IC = 1 mA, VCE = 5 V 5 ― 8 V Collector-emitter saturation voltage VCE (sat) IC = 10 A, VGE = 15 V ― 2.1 2.7 V VCE = 10 V, VGE = 0 V, f = 1 MHz ― 720 ― pF ― 0.3 ― ― 0.4 ― ― 0.2 0.35 ― 0.4 ― Cies Rise time Turn-on time tr ton Switching time Fall time Turn-off time tf 100 Ω 15 V 0V −15 V toff 30 Ω Input capacitance 300 V µs Forward voltage VF IF = 10 A, VGE = 0 V ― ― 2.0 V Reverse recovery time trr IF = 10 A, di/dt = −100 A/µs ― ― 200 ns Transistor ― ― 3.09 Diode ― ― 4.77 Thermal resistance Rth (j-c) 2 °C/W 2002-11-20 MP6759 IC – VCE VCE – VGE 16 20 15 Common emitter 13 VCE 16 12 Collector-emitter voltage Collector current IC (A) Tc = 25°C (V) 20 Common emitter 12 8 VGE = 11 V 4 0 0 1 2 3 4 Collector-emitter voltage VCE Tc = −40°C 12 8 20 4 IC = 5 A 0 0 5 (V) 4 8 VCE – VGE 20 (V) VCE – VGE Common emitter (V) (V) VCE Tc = 25°C 12 Collector-emitter voltage VCE 16 16 Common emitter Collector-emitter voltage 12 Gate-emitter voltage VGE 16 8 20 4 10 IC = 5 A 0 0 10 4 8 12 Gate-emitter voltage VGE 16 Tc = 125°C 12 8 IC = 5 A 0 0 20 (V) 20 4 4 8 10 12 Gate-emitter voltage VGE 16 20 (V) IC – VGE 20 Common emitter Collector current IC (A) VCE = 5 V 16 12 8 Tc = 125°C 4 0 0 4 25 −40 8 12 Gate-emitter voltage VGE 16 20 (V) 3 2002-11-20 MP6759 Switching Time – IC Switching Time – RG 1 Common emitter VCC = 300 V VGE = ±15 V RG = 100 Ω Tc = 25°C 3 Common emitter VCC = 300 V VGE = ±15 V IC = 10 A Tc = 25°C (µs) toff 0.3 ton Switching time Switching time (µs) 0.5 5 tf 0.1 tr 0.05 ton 1 tr 0.5 toff 0.3 0.03 tf 0.02 1 3 5 10 30 Collector current IC 50 100 0.1 10 (A) 30 50 100 300 Gate resistance RG VCE, VGE – QG C – VCE Common emitter RL = 30 Ω Tc = 25°C 1000 (pF) 16 VCE = 0 V 300 12 100 200 8 4 0 0 100 30 5 0.5 8 16 24 QG 32 Cies 300 10 Charge 40 Coes Common emitter VGE = 0 V f = 1 MHz Tc = 25°C 1 3 30 100 Collector-emitter voltage IF – VF VCE 300 1000 (V) trr, Irr – IF 10 Peak reverse recovery current Irr (A) Reverse recovery time trr (×100 ns) Common cathode VGE = 0 V (A) 16 Forward current IF Cres 10 (nQ) 20 12 Tc = 125°C 25 −40 8 4 0 0 1000 3000 Capacitance C Collector-emitter voltage VCE (V) 20 500 (Ω) 0.4 0.8 Forward voltage 1.2 VF 1.6 5 trr 3 0.5 0.3 0.1 0 2.0 (V) Irr 1 Common cathode di/dt = 100 A/µs VGE = −10 V Tc = 25°C 4 8 Forward current 4 12 IF 16 (A) 2002-11-20 MP6759 Rth – tw 100 50 30 Thermal transient resistance Rth (°C/W) 10 Diode 5 3 IGBT 1 0.5 0.3 0.1 0.05 0.03 Tc = 25°C 0.01 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe Operating Area Reverse Bias Area 40 Tj ≤ 125°C Collector current 10 (A) 50 µs* IC max (continuous) 100 µs* 1 s* DC operation 1 ms* 1 0.1 0.1 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 1 10 Collector-emitter voltage VGE = ±15 V RG = 100 Ω 30 IC IC IC max (pulsed)* Collector current (A) 100 20 10 10 ms* 100 VCE 1000 0 0 (V) 200 400 Collector-emitter voltage 5 600 VCE 800 (V) 2002-11-20 MP6759 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2002-11-20