TPC8018-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8018-H High-Speed and High-Efficiency DC/DC Converter Applications Unit: mm Notebook PC Applications Portable-Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 12 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 3.5 mΩ (typ.) • High forward transfer admittance: |Yfs| =50 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 Gate-source voltage VGSS ±20 DC JEDEC ― V JEITA ― V TOSHIBA (Note 1) ID 18 Pulsed (Note 1) IDP 72 PD 1.9 W PD 1.0 W EAS 210 mJ IAR 18 A EAR 0.19 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) A 2-6J1B Weight: 0.085 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-16 TPC8018-H Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-a) 65.8 °C/W Rth (ch-a) 125 °C/W Marking (Note 5) TPC8018 H Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 18 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: • on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-16 TPC8018-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ VDS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 VGS = 4.5 V, ID = 9 A ⎯ 4.8 6.2 VGS = 10 V, ID = 9 A ⎯ 3.5 4.6 VDS = 10 V, ID = 9 A 25 50 ⎯ ⎯ 2265 ⎯ VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 255 ⎯ ⎯ 1045 ⎯ ⎯ 5 ⎯ ⎯ 14 ⎯ Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr Turn-on time ton 4.7 Ω Switching time Fall time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd Gate switch charge QSW VOUT 11 ⎯ Duty < = 1%, tw = 10 µs ⎯ 50 ⎯ VDD ∼ − 24 V, VGS = 10 V, ID = 18 A ⎯ 38 ⎯ VDD ∼ − 15 V VDD ∼ − 24 V, VGS = 5 V, ID = 18 A VDD ∼ − 24 V, VGS = 10 V, ID = 18 A V mΩ S pF ns ⎯ tf Turn-off time ID = 9 A VGS 10 V 0V RL = 1.67Ω Rise time V ⎯ 21 ⎯ ⎯ 7.3 ⎯ ⎯ 9 ⎯ ⎯ 12 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 72 A ⎯ ⎯ −1.2 V VDSF IDR = 18 A, VGS = 0 V 3 2006-11-16 TPC8018-H ID – VDS ID – VDS 10 Drain current ID (A) 16 4 Common source Ta = 25°C Pulse test 3.3 8 6 50 3.5 3.2 4.5 Drain current ID (A) 20 3.1 12 3 8 2.9 4 40 Common source Ta = 25°C Pulse test 3.6 10 6 5 3.5 3.8 4 4.5 3.4 3.3 30 3.2 20 3.1 3 10 VGS = 2.8V VGS = 2.8V 0 0 0.2 0.4 0.6 0.8 Drain-source voltage VDS 0 0 1 (V) 0.4 0.8 Drain-source voltage VDS (V) Drain current ID (A) 40 30 20 Ta = −55°C 100 25 0 0 1 2 Common source Ta = 25°C Pulse test 0.16 0.12 ID = 18 A 0.08 9 0.04 3 5 0 0 6 VGS (V) 2 4 Gate-source voltage 6 8 10 VGS (V) RDS (ON) – ID 1000 100 Drain-source ON-resistance RDS (ON) (mΩ) (S) ⎪Yfs⎪ – ID Forward transfer admittance |Yfs| (V) 4.5 4 Gate-source voltage Ta = −55°C 100 25 100 10 1 Common source VDS = 10 V Pulse test 0.1 0.1 2 VDS – VGS 0.2 Common source VDS = 10 V Pulse test 10 1.6 Drain-source voltage VDS ID – VGS 50 1.2 1 10 Common source Ta = 25°C Pulse test 10 4.5 VGS = 10 V 1 0.1 100 Drain current ID (A) 1 10 100 Drain current ID (A) 4 2006-11-16 TPC8018-H RDS (ON) – Ta IDR – VDS 10 1000 Common source Common source ID = 18A 6 ID = 4.5A,9A VGS = 4.5 V 4 ID = 4.5A,9A,18A 2 VGS = 10 V 0 −80 Ta = 25°C (A) Drain reverse current IDR −40 0 40 80 Ambient temperature 120 Ta Pulse test 100 10 3 10 1 1 VGS = 0 V 0.1 0 160 4.5 (°C) −0.4 −0.2 Capacitance – VDS Gate threshold voltage Vth (V)) 1000 Coss Crss Common source VGS = 0 V Ta = 25°C 10 0.1 1 10 1.5 1 Common source 0.5 VDS = 10 V ID = 1 mA Pulse test 0 −80 100 Drain-source voltage VDS 2 (V) −40 glass-epoxy board(b) (Note 2b) ｔ＝10s 1.2 (2) 0.8 0.4 80 Ambient temperature Ta 160 (°C) 120 Ta 20 Common source (2)Device mounted on a 40 120 50 (Note 2a) Drain-source voltage VDS (V) glass-epoxy board(a) 1.6 80 Dynamic input/output characteristics (1)Device mounted on a (1) 40 Ambient temperature PD – Ta 2 0 ID = 18 A 40 Pulse test VDD = 6 V 30 20 12 5 8 24 10 4 VGS 8 16 Total gate charge (°C) 12 VDS 0 0 160 16 Ta = 25°C 24 Qg 32 VGS (V) (pF) Capacitance C (V) Vth – Ta f = 1 MHz Drain power dissipation PD (W) −1.0 2.5 Ciss 0 0 −0.8 Drain-source voltage VDS 10000 100 −0.6 Gate-source voltage Drain-source ON-resistance RDS (ON) (mΩ) Pulse test 8 0 40 (nC) 2006-11-16 TPC8018-H Transient thermal impedance rth (°C/W) rth – tw 1000 (1) Device mounted on a glass-epoxy board (a) (Note (2) 2a) (2) Device mounted on a glass-epoxy board (b) (Note 100 2b) (1) 10 1 Single - pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 100 1000 tw (s) Safe operating area Drain current ID (A) 1000 100 ID max (Pulse) * t=1ms * 10ms * 10 * Single - pulse 1 Ta=25℃ Curves must be derated linearly with increase in VDSS max temperature. 0.1 0.1 1 10 Drain-source voltage VDS 100 (V) 6 2006-11-16 TPC8018-H 7 2006-11-16