2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A) • Complementary to 2SD1222. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −40 V Emitter-base voltage VEBO −5 V Collector current IC −3 A Base current IB −0.3 A Ta = 25°C Collector power dissipation PC Tc = 25°C Junction temperature Storage temperature range 1.0 15 W JEDEC ― ― Tj 150 °C JEITA Tstg −55 to 150 °C TOSHIBA Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2-7B1A Weight: 0.36 g (typ.) Equivalent Circuit COLLECTOR BASE ≈ 4.8 kΩ ≈ 300 Ω EMITTER JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2006-11-21 2SB907 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −60 V, IE = 0 ― ― −20 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −2.5 mA V (BR) CEO IC = −25 mA, IB = 0 −40 ― ― V hFE (1) VCE = −2 V, IC = −1 A 2000 ― ― hFE (2) VCE = −2 V, IC = −3 A 1000 ― ― Collector-emitter saturation voltage VCE (sat) IC = −2 A, IB = −4 mA ― ― −1.5 V Base-emitter saturation voltage VBE (sat) IC = −2 A, IB = −4 mA ― ― −2.0 V ― 0.30 ― ― 0.60 ― ― 0.25 ― DC current gain Turn-on time ton IB2 Storage time tstg IN I PUT B1 IB1 Switching time 20 μs Fall time IB2 OUTPUT 10 Ω Collector-emitter breakdown voltage μs VCC = −30 V tf −IB1 = IB2 = 6 mA, DUTY CYCLE ≤ 1% Marking B907 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-21 2SB907 IC – VCE IC – VCE −5 −5 Common emitter Common emitter Tc = 100°C (A) −4 Collector current IC Collector current IC (A) Tc = 25°C −300 −275 −3 −250 −2 −225 −200 −1 −4 −3 −200 −170 −2 −150 −125 −1 IB = −175 μA 0 0 IB = −100 μA 0 −1 −2 −3 −4 Collector-emitter voltage −5 0 0 −6 VCE (V) 0 −1 −2 −3 −4 Collector-emitter voltage IC – VCE −5 −6 VCE (V) hFE – IC −5 10000 Common emitter DC current gain hFE Collector current IC (A) Tc = −55°C −4 −600 −3 −500 −2 −400 5000 25 3000 −55 1000 Common emitter 500 VCE = −2 V −1 IB = −300 μA 300 −0.1 0 0 0 −1 −2 −3 −4 Collector-emitter voltage −5 −0.3 −1 −3 Collector current IC −6 VBE (sat) – IC IC/IB = 500 Tc = −55°C −1 25 100 −0.5 −0.3 −1 Collector current IC Base-emitter saturation voltage VBE (sat) (V) Common emitter −0.3 −0.1 (A) −10 −5 −3 −10 VCE (V) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Tc = 100°C Common emitter IC/IB = 500 −5 −3 Tc = −55°C 25 −1 −0.5 −0.1 −3 (A) 100 −0.3 −1 Collector current IC 3 −3 (A) 2006-11-21 2SB907 IC – VBE Safe Operating Area −4 −10 IC max (pulsed)* Common emitter −5 −3 IC max (continuous) 10 ms* 1 ms* (A) −3 100 −2 25 Collector current IC Collector current IC (A) VCE = −2 V Tc = −55°C −1 −1 −0.5 DC operation Tc = 25°C −0.3 *: Single nonrepetitive pulse 0 0 −0.8 −1.6 −2.4 −3.2 −4.0 −0.1 Base-emitter voltage VBE (V) Tc = 25°C Curves must be derated linearly VCEO max with increase in temperature. −0.05 0 −3 −10 Collector-emitter voltage −30 −100 VCE (V) PC (W) 16 Collector power dissipation PC – Ta 12 (1) Tc = Ta infinite heat sink (2) Ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink (1) 8 4 (2) (3) 0 0 40 80 120 160 200 240 Ambient temperature Ta (°C) 4 2006-11-21 2SB907 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-21