Diodes DRDPB26W Complex array for relay driver Datasheet

DRD (xxxx) W
COMPLEX ARRAY FOR RELAY DRIVERS
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Features
•
•
•
•
A
Epitaxial Planar Die Construction
One Transistor and One Switching Diode in One Package
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
SOT-363
B C
Mechanical Data
•
•
•
•
•
•
•
•
Case: SOT-363
Case Material: Molded Plastic. "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 8
Ordering Information: See Page 8
Weight: 0.008 grams (approximate)
H
K
J
M
D
F
L
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
⎯
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
α
0°
8°
All Dimensions in mm
P/N
DRDNB16W
DRDPB16W
DRDNB26W
DRDPB26W
R1 (NOM) R2 (NOM)
1K
10K
1K
10K
220
4.7K
220
4.7K
DRDN010W/
DRDN005W
Maximum Ratings, Total Device
R2
R2
R1
DRDP006W
DRDNB16W/
DRDNB26W
R1
DRDPB16W/
DRDPB26W
@TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 3)
Symbol
PD
Value
200
Unit
mW
Thermal Resistance, Junction to Ambient Air (Note 3)
RθJA
TJ, TSTG
625
°C/W
-55 to +150
°C
Operating and Storage Temperature Range
Maximum Ratings, DRDN010W NPN Transistor
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 3)
Maximum Ratings, DRDN005W NPN Transistor
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous (Note 3)
Notes:
@TA = 25°C unless otherwise specified
Value
45
18
5
1000
Unit
V
V
V
mA
@TA = 25°C unless otherwise specified
Symbol
VCBO
VCEO
VEBO
IC
Value
80
80
4.0
500
Unit
V
V
V
mA
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on page 9 or our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30573 Rev. 10 - 2
1 of 9
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DRD (xxxx) W
© Diodes Incorporated
Maximum Ratings, DRDP006W PNP Transistor
Characteristic
@TA = 25°C unless otherwise specified
Symbol
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 3)
Maximum Ratings, DRDNB16W Pre-Biased NPN Transistor
Characteristic
Maximum Ratings, DRDNB26W Pre-Biased NPN Transistor
Characteristic
Maximum Ratings, DRDPB16W Pre-Biased PNP Transistor
Characteristic
Maximum Ratings, DRDPB26W Pre-Biased PNP Transistor
Characteristic
Maximum Ratings, Switching Diode
Unit
V
V
mA
@TA = 25°C unless otherwise specified
Value
-50
+5 to -10
600
Unit
V
V
mA
@TA = 25°C unless otherwise specified
Value
-50
+5 to -5
-600
Unit
V
V
mA
Value
100
Unit
V
75
V
53
500
250
4.0
2.0
V
mA
mA
@TA = 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
DS30573 Rev. 10 - 2
Value
50
-5 to +5
600
Symbol
VCC
VIN
IC
Supply Voltage
Input Voltage
Output Current
Unit
V
V
mA
@TA = 25°C unless otherwise specified
Symbol
VCC
VIN
IC
Supply Voltage
Input Voltage
Output Current
Non-Repetitive Peak Forward Surge Current
Value
50
-5 to +10
600
Symbol
VCC
VIN
IC
Supply Voltage
Input Voltage
Output Current
Unit
V
V
V
mA
@TA = 25°C unless otherwise specified
Symbol
VCC
VIN
IC
Supply Voltage
Input Voltage
Output Current
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Value
-60
-60
-5.0
-600
(Note 3)
(Note 3)
@ t = 1.0μs
@ t = 1.0s
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
2 of 9
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A
DRD (xxxx) W
© Diodes Incorporated
Electrical Characteristics, DRDN010W NPN Transistor
Characteristic
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Current Gain-Bandwidth Product
Capacitance
Symbol
hFE
VCE(SAT)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
fT
Cobo
Min
150
@TA = 25°C unless otherwise specified
Max
800
0.5
⎯
45
18
5
⎯
⎯
⎯
1
1
⎯
⎯
100
Test Condition
IC = 100mA, VCE = 1V
IC = 300mA, IB = 30mA
IC = 100μA, IE = 0
IC = 1mA, IB = 0
IE = 100μA, IC = 0
VCB = 40V, IE = 0
VEB = 4V, IC = 0
VCE = 10V, IC = 50mA, f = 100MHz
VCB = 10V, IE = 0, f = 1MHz
μA
μA
MHz
pF
⎯
8
⎯
Electrical Characteristics, DRDN005W NPN Transistor
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Unit
⎯
V
V
V
V
@TA = 25°C unless otherwise specified
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Min
80
80
4.0
Max
⎯
⎯
⎯
Unit
V
V
V
Collector Cutoff Current
ICBO
⎯
100
nA
Collector Cutoff Current
ICES
⎯
100
nA
DC Current Gain
hFE
100
⎯
⎯
VCE(SAT)
VBE(SAT)
⎯
⎯
0.25
1.2
V
V
fT
100
⎯
MHz
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Electrical Characteristics, DRDP006W PNP Transistor
Characteristic
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Current Gain-Bandwidth Product
Capacitance
Symbol
hFE
VCE(SAT)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
fT
Cobo
Min
100
⎯
-60
-60
-5
@TA = 25°C unless otherwise specified
Max
300
-0.4
Unit
⎯
V
V
V
V
nA
MHz
pF
⎯
⎯
⎯
-10
⎯
200
⎯
8
⎯
Test Condition
IC = -150mA, VCE = -10V
IC = -150mA, IB = -15mA
IC = -10μA, IE = 0
IC = -10mA, IB = 0
IE = -10μA, IC = 0
VCB = -50V, IE = 0
VCE = -20V, IC = -50mA, f = 100MHz
VCB = -10V, IE = 0, f = 1MHz
Electrical Characteristics, DRDNB16W Pre-Biased NPN Transistor
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
DS30573 Rev. 10 - 2
Symbol
Vl(off)
Vl(on)
VO(on)
Il
IO(off)
Gl
fT
Min
0.3
⎯
⎯
⎯
⎯
56
⎯
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Test Condition
IC = 100μA, IE = 0
IC = 1.0mA, IB = 0
IE = 100μA, IC = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCE = 60V, IBO = 0V
VCE = 80V, IBO = 0V
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
IC = 100mA, IB = 10mA
IC = 100mA, VCE = 1.0V
VCE = 2.0V, IC = 10mA,
f = 100MHz
Typ
⎯
⎯
⎯
⎯
⎯
⎯
200
Max
⎯
2.0
0.3V
7.2
0.5
⎯
⎯
@TA = 25°C unless otherwise specified
Unit
V
V
V
mA
Test Condition
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 20mA
IO/Il = 50mA/2.5mA
VI = 5V
μA VCC = 50V, VI = 0V
⎯ VO = 5V, IO = 50mA
MHz VCE = 10V, IE = 5mA, f = 100MHz
DRD (xxxx) W
© Diodes Incorporated
Electrical Characteristics, DRDNB26W Pre-Biased NPN Transistor
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Symbol
Vl(off)
Vl(on)
VO(on)
Il
IO(off)
Gl
fT
Min
0.5
Typ
⎯
⎯
⎯
⎯
⎯
⎯
200
⎯
⎯
⎯
⎯
47
⎯
Max
⎯
3.0
0.3V
28
0.5
⎯
⎯
Unit
V
V
V
mA
Test Condition
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 20mA
IO/Il = 50mA/2.5mA
VI = 5V
μA VCC = 50V, VI = 0V
⎯ VO = 5V, IO = 50mA
MHz VCE = 10V, IE = 5mA, f = 100MHz
Electrical Characteristics, DRDPB16W Pre-Biased PNP Transistor
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Symbol
Vl(off)
Vl(on)
VO(on)
Il
IO(off)
Gl
fT
Min
-0.3
Typ
⎯
⎯
⎯
⎯
⎯
⎯
200
⎯
⎯
⎯
⎯
56
⎯
Max
⎯
-2.0
-0.3V
-7.2
-0.5
⎯
⎯
@TA = 25°C unless otherwise specified
Unit
V
V
V
mA
Test Condition
VCC = -5V, IO = -100μA
VO = -0.3V, IO = -20mA
IO/Il = -50mA/-2.5mA
VI = -5V
μA VCC = -50V, VI = 0V
⎯ VO = -5V, IO = -50mA
MHz VCE = -10V, IE = -5mA, f = 100MHz
Electrical Characteristics, DRDPB26W Pre-Biased PNP Transistor
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Symbol
Vl(off)
Vl(on)
VO(on)
Il
IO(off)
Gl
fT
Electrical Characteristics, Switching Diode
Characteristic
Reverse Breakdown Voltage (Note 4)
Min
-0.5
Typ
⎯
⎯
⎯
⎯
⎯
⎯
200
⎯
⎯
⎯
⎯
47
⎯
Max
⎯
-3.0
-0.3V
-28
-0.5
⎯
⎯
@TA = 25°C unless otherwise specified
@TA = 25°C unless otherwise specified
Unit
V
V
V
mA
Test Condition
VCC = -5V, IO = -100μA
VO = -0.3V, IO = -20mA
IO/Il = -50mA/-2.5mA
VI = -5V
μA VCC = -50V, VI = 0V
⎯ VO = -5V, IO = -50mA
MHz VCE = -10V, IE = -5mA, f = 100MHz
@TA = 25°C unless otherwise specified
Symbol
V(BR)R
Min
75
Max
⎯
Unit
⎯
Forward Voltage
VF
0.62
⎯
⎯
⎯
0.72
0.855
1.0
1.25
V
Reverse Current (Note 4)
IR
⎯
2.5
50
30
25
μA
μA
μA
nA
Total Capacitance
CT
⎯
4.0
pF
Reverse Recovery Time
trr
⎯
4.0
ns
Notes:
Test Condition
IR = 10μA
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
VR = 75V
VR = 75V, TJ = 150°C
VR = 25V, TJ = 150°C
VR = 20V
VR = 0, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100Ω
4. Short duration pulse test used to minimize self-heating effect.
DS30573 Rev. 10 - 2
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Device Characteristics
1,000
200
RθJA = 625°C/W
hFE, DC CURRENT GAIN
PD, POWER DISSIPATION (mW)
250
150
100
100
50
VCE = 1.0V
1
0.0001
0
0
80
120
160
40
200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve (Total Device)
100
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Fig. 2, Typical DC Current Gain
vs. Collector Current (DRDN010W)
10
1,000
VCE (SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (mV)
COBO, OUTPUT CAPACITANCE (pF)
f = 1MHz
10
1
0.1
0.0001
100
1
0.1
0.01
50
75
100
TA, AMBIENT TEMPERATURE (ºC)
Fig. 5, Typical Collector-Cutoff Current
vs. Ambient Temperature (DRDN005W)
DS30573 Rev. 10 - 2
0.001
0.01
0.1
10
1
IC, COLLECTOR CURRENT (A)
Fig. 4, Typical Collector Saturation Voltage vs.
Collector Current (DRDN010W)
VCE, COLLECTOR EMITTER VOLTAGE (V)
ICBO, COLLECTOR-BASE CURRENT (nA)
10
1
1
10
VCB, COLLECTOR-BASE VOLTAGE (V)
Fig. 3, Typical Output Capacitance vs.
Collector-Base Voltage (DRDN010W)
10
25
100
125
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2.0
1.8
IC = 30mA
1.6
1.4
IC = 10mA
1.2
1.0
IC = 1mA
0.8
0.6
0.4
IC = 100mA
0.2
0
0.001
1
0.1
10
100
IB, BASE CURRENT (mA)
Fig. 6, Typical Collector Saturation Region (DRDN005W)
0.01
DRD (xxxx) W
© Diodes Incorporated
0.500
10,000
0.450
0.400
T A = 150°C
1,000
hFE, DC CURRENT GAIN
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
VCE = 5V
IC
IB = 10
0.350
0.300
TA = 25°C
0.250
TA = 150°C
0.200
0.150
0.100
100
T A = 25°C
TA = -50°C
10
0.050
TA = -50°C
0
1
1
1,000
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 7, Typical Collector-Emitter Saturation Voltage
vs. Collector Current (DRDN005W)
1
VCE = 5V
0.9
fT, GAIN BANDWIDTH PRODUCT (MHz)
VBE(ON), BASE-EMITTER ON VOLTAGE (V)
1,000
1,000
1.0
0.8
TA = -50°C
0.7
TA = 25°C
0.6
0.5
0.4
T A = 150°C
0.3
0.2
0.1
0.1
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 9, Typical Base-Emitter On Voltage
vs. Collector Current (DRDN005W)
100
10
1
100
10
1
IC, COLLECTOR CURRENT (mA)
Fig. 10, Typical Gain Bandwidth Product vs.
Collector Current (DRDN005W)
0.6
1.6
VCE, COLLECTOR-EMITTER VOLTAGE (V)
IC
= 10
IB
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 8, Typical DC Current Gain vs.
Collector Current (DRDN005W)
0.5
0.4
0.3
TA = 150°C
TA = 25°C
0.2
0.1
TA = -50°C
0
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig.11, Typical Collector-Emitter Saturation Voltage vs.
Collector Current (DRDP006W)
DS30573 Rev. 10 - 2
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1.4
IC = 300mA
IC = 10mA
IC = 100mA
1.2
IC = 1mA
IC = 30mA
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
100
IB, BASE CURRENT (mA)
Fig. 12, Typical Collector Saturation Region (DRDP006W)
DRD (xxxx) W
© Diodes Incorporated
1.0
1,000
VBE(ON), BASE-EMITTER ON VOLTAGE (V)
VCE = 5V
hFE, DC CURRENT GAIN
TA = 150°C
100
T A = 25°C
TA = -50°C
10
VCE = 5V
0.9
0.7
0.6
0.5
0.4
0.3
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 13, Typical DC Current Gain vs.
Collector Current (DRDP006W)
0.2
1,000
0.1
10
1
IC, COLLECTOR CURRENT (mA)
Fig. 14, Typical Base-Emitter On Voltage
vs. Collector Current (DRDP006W)
100
30
VCE = 5V
20
C, CAPACITANCE (pF)
fT, GAIN BANDWIDTH PRODUCT (MHz)
1,000
100
10
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 15, Typical Gain Bandwidth Product vs.
Collector Current (DRDP006W)
1,000
Cibo
10
5.0
-1.0
-10
-30
VR, REVERSE VOLTAGE (V)
Fig. 16, Typical Capacitance (DRDP006W)
IR, INSTANTANEOUS REVERSE CURRENT (nA)
10,000
100
10
TA = -40ºC
1
0.1
TA = 125ºC
1,000
0.4
0.8
1.2
1.6
0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 17, Typical Forward Characteristics (Switching Diode)
DS30573 Rev. 10 - 2
f = 1MHz
1.0
-0.1
1
IF, INSTANTANEOUS FORWARD CURRENT (mA)
T A = -50°C
0.8
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100
10
1
0.1
60
80
100
20
40
VR, REVERSE VOLTAGE (V)
Fig. 18, Typical Reverse Characteristics (Switching Diode)
0
DRD (xxxx) W
© Diodes Incorporated
CT, TOTAL CAPACITANCE (pF)
3
2.5
f = 1MHz
2
1.5
1
0.5
0
0
10
30
20
40
V R, REVERSE VOLTAGE (V)
Fig. 19, Typical Capacitance vs. Reverse Voltage
(Switching Diode)
Ordering Information
Notes:
5.
(Note 5)
Device
Packaging
Shipping
DRDN010W-7
SOT-363
3000/Tape & Reel
DRDP006W-7
SOT-363
3000/Tape & Reel
DRDNB16W-7
SOT-363
3000/Tape & Reel
DRDNB26W-7
SOT-363
3000/Tape & Reel
DRDPB16W-7
SOT-363
3000/Tape & Reel
DRDPB26W-7
SOT-363
3000/Tape & Reel
DRDN005W-7
SOT-363
3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
RDxx
Date Code Key
Year
RDxx = Product Type Marking Code:
RD01 = DRDN010W
RD02 = DRDP006W
RD03 = DRDNB16W
RD04 = DRDNB26W
RD05 = DRDPB16W
RD06 = DRDPB26W
RD07 = DRDN005W
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
2005
2006
2007
2008
2009
2010
2011
2012
S
T
U
V
W
X
Y
Z
Code
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30573 Rev. 10 - 2
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© Diodes Incorporated
Sample Applications
R2
R1
Relay
Relay
RL
DRDN010W/
DRDN005W
DRDP006W
DRDNB16W
R1
Relay
RL
10kΩ
RL
R2
1kΩ
Application Example: DRDN010W/DRDN005W current
sink configuration, bias resistors not included
Application Example: DRDP006W current source
configuration, bias resistors not included
Application Example: DRDNB16W current
sink configuration with built-in bias resistors
4.7kΩ
10kΩ
220Ω
Relay
1kΩ
RL
RL
DRDPB26W
DRDPB16W
DRDNB26W
220Ω
Relay
Relay
RL
4.7kΩ
Application Example: DRDNB26W current sink
configuration with built-in bias resistors (low R1)
Application Example: DRDPB16W current source
configuration with built-in bias resistors
Application Example: DRDPB26W current source
configuration with built-in bias resistors (low R1)
Suggested Pad Layout
E
Z
E
Dimensions Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C
1.9
E
0.65
C
G
Y
X
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30573 Rev. 10 - 2
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