LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode LBAV99LT1G S-LBAV99LT1G • We declare that the material of product compliance with RoHS requirements. 3 • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and 1 PPAP Capable. 2 . SOT–23 DEVICE MARKING ORDERING INFORMATION Device Marking 2 CATHODE 1 ANODE 3 CAHODE/ANODE Shipping LBAV99LT1G S-LBAV99LT1G A7 3000 Tape & Reel LBAV99LT3G S-LBAV99LT3G A7 10000 Tape & Reel MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current (1) (averaged over any 20 ms period) Repetitive Peak Forward Current Non–Repetitive Peak Forward Current t = 1.0 µ s t = 1.0 ms t = 1.0 S Symbol VR IF I FM(surge) V RRM Value 70 215 500 70 Unit Vdc mAdc mAdc V I F(AV) 715 mA I FRM I FSM 450 mA A 2.0 1.0 0.5 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board, (1) T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD R θJA PD R θJA T J , T stg Max 225 Unit mW 1.8 mW/°C 556 300 °C/W mW 2.4 mW/°C 417 –65 to +150 °C/W °C 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Rev.O 1/4 LESHAN RADIO COMPANY, LTD. LBAV99LT1G , S-LBAV99LT1G ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit V (BR) IR 70 — –– –– — 2.5 30 50 Vdc µAdc CD — 1.5 pF V –– — –– –– 715 855 1000 1250 mVdc t rr — 6.0 ns V FR — 1.75 V OFF CHARACTERISTICS Reverse Breakdown Voltage(I (BR) = 100 µA) Reverse Voltage Leakage Current (V R = 70 Vdc) (V R = 25 Vdc, T J = 150°C) (V R = 70 Vdc, T J = 150°C) Diode Capacitance (V R = 0, f = 1.0 MHz) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc, i R(REC) = 1.0 mAdc, R L = 100Ω ) (Figure 1) Forward Recovery Voltage (I F = 10 mA, t r = 20 ns) F Rev.O 2/4 LESHAN RADIO COMPANY, LTD. LBAV99LT1G , S-LBAV99LT1G +10 V 2.0 k 820 Ω 100 µH IF 0.1 µF t tr 0.1µF IF t p t rr 10% t 90% D.U.T. 50 Ω INPUT SAMPLING OSCILLOSCOPE 50 Ω OUTPUT PULSE GENERATOR i IR INPUT SIGNAL VR R(REC) = 1.0 mA OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p » t rr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH DIODE I R , REVERSE CURRENT (µA) 10 T A = 85°C 10 T A = – 40°C 1.0 T A = 25°C 0.1 T A = 150°C T A = 125°C 1.0 T A = 85°C 0.1 T A = 55°C 0.01 T A = 25°C 0.001 0.2 0.4 0.6 0.8 1.0 0 1.2 10 20 30 40 V R , REVERSE VOLTAGE (VOLTS) V F , FORWARD VOLTAGE (VOLTS) Figure 3. Leakage Current Figure 2. Forward Voltage 0.68 C D ,TOTAL CAPACITANCE (pF) I F , FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2 4 6 8 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance Rev.O 3/4 50 LESHAN RADIO COMPANY, LTD. LBAV99LT1G , S-LBAV99LT1G SOT-23 Dimension Outline: NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. ANODE 2. CAHODE 3. CAHODE/ANODE Soldering Footprint: 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 4/4