DSK LL4150 Small signal switching diode Datasheet

Diode Semiconductor Korea
VOLTAGE RANGE: 50 V
SMALL SIGNAL SWITCHING DIODE
FEATURES
LL4150
CURRENT: 300 m A
MINI-MELF
◇ Silicon epitaxial planar diode
Cathode indification
φ 1.5± 0.1
◇ High speed switching diode
◇ 500 mW power dissipation
MECHANICAL DATA
◇ Case: MINI-MELF,glass case
0.4± 0.1
3.4 +0.3
-0.1
◇ Polarity: Color band denotes cathode
Dimensions in millimeters
◇ Weight: Approx 0.031 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
MAXIMUM RATINGS
LL4150
UNITS
Reverse voltage
VR
50
V
Peak reverse voltage
VRM
50
V
IO
300
mA
Forward surge current at t=1µs
IFSM
4.0
A
Power dissipation
Ptot
500
mW
Rthja
350
K/W
Tj
175
℃
TSTG
-65 --- + 175
℃
Average forward rectified current VR=0V
Thermal resistance junction to ambient
Junction temperature
Storage temperature range
ELECTRICAL CHARACTERISTICS
MIN.
MAX.
Forward voltage at IF=1mA
0.54
0.62
IF=10mA
0.66
0.74
0.76
0.86
IF=100mA
0.82
0.92
IF=200mA
0.87
1.0
-
0.1
-
100
Ctot
-
2.5
pF
trr
-
4.0
ns
IF=50mA
Leakage current @VR=50V,TJ=25℃
VR=50V,TJ=150℃
Capacitance at VR=0V,f=1MHZ,VHF=50mV
VF
IR
UNITS
V
µA
Reverse recovery time
IF=IR=(10to100mA),iR=0.1×IR
RL=100Ω
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LL4 150
Diode Semiconductor Korea
FIG.1 -- ADMISSIBLE POWER DISSIPATION
NNNNNN VERSUS AMBIENT TEMPERATURE
FIG.2 -- FORWARD CHARACTERISTICS
mA
10 3
mW
1000
900
800
Ptot
10 2
700
600
T J =25
I F 10
500
400
1
300
200
10 -1
100
0
0
100
200℃
10
TA
-2
0
0.5
VF
1V
FIG.3 -- LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE
nA
10 4
10 3
10 2
10
V R =50V
1
0
10 0
20 0℃
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