MG150J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS50 High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l 7 IGBTs built into 1 package. l Enhancement-mode l High speed type IGBT : : : : l Outline l Weight: 520g Inverter stage VCE (sat) = 2.8V (max) (@IC = 150A) tf = 0.5µs (max) (@IC = 150A) trr = 0.3µs (max) (@IF = 150A) : TOSHIBA 2-110A1B Equivalent Circuit 1 2001-08-16 MG150J7KS50 Inverter Stage Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 150 1ms ICP 300 DC IF 150 1ms IFM 300 Collector power dissipation (Tc = 25°C) PC 320 W Junction temperature Tj 150 °C Storage temperature range Tstg −40 ~ 125 °C Isolation voltage VIsol 2500 (AC 1 min.) V ― 3/3 N·m Collector current Forward current Screw torque (Terminal / mounting) A A Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20V, VCE = 0 ― ― ±500 nA Collector-emitter cut-off current ICES VCE = 600V, VGE = 0 ― ― 1.0 mA Gate-emitter cut-off voltage VGE (off) VCE = 5V, IC = 15mA, 5.0 ― 8.0 V Collector-emitter saturation voltage VCE (sat) IC = 150A, VGE = 15V ― 2.2 2.8 V Cies VCE = 10V, VGE = 0V, f = 1MHz ― 12.0 ― nF IF = 150A ― 2.5 3.5 V ― 0.15 0.3 ― 0.23 0.46 ― 0.25 0.50 ― 0.50 1.00 ― 0.15 0.30 Transistor stage ― ― 0.39 Diode stage ― ― 1.00 ― 0.05 ― Input capacitance Forward voltage VF Rise time Turn-on time Switching time Fall time Turn-off time Reverse recovery time Thermal resistance tr ton tf toff Inductive load VCC = 300V IC = 150A VGE = ±15V RG = 9.2Ω (Note 1) trr Rth (j-c) Rth (c-f) Case to fin (Note 2) µs °C / W Note 2: Silicone grease is applied. 2 2001-08-16 MG150J7KS50 Brake Stage Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V VR 600 V Reverse voltage DC IC 50 1ms ICP 100 DC IF 50 1ms IFM 100 Collector power dissipation (Tc = 25°C) PC 120 W Junction temperature Tj 150 °C Storage temperature range Tstg −40 ~ 125 °C Isolation voltage VIsol 2500 (AC 1 min.) V ― 3/3 N·m Collector current Forward current Screw torque (Terminal / mounting) A A Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UNIT Gate leakage current IGES VGE = ±20V, VCE = 0V ― ― ±500 nA Collector-emitter cut-off current ICES VCE = 600V, VGE = 0V ― ― 1.0 mA Gate-emitter cut-off voltage VGE (off) VCE = 5V, IC = 5mA, 5.0 ― 8.0 V Collector-emitter saturation voltage VCE (sat) IC = 50A, VGE = 15V ― 2.0 2.5 V VCE = 10V, VGE = 0V, f = 1MHz ― 4.0 ― nF IR VR = 600V ― ― 1.0 mA VF IF = 150A ― 2.2 2.8 V ― 0.08 0.16 ― 0.10 0.20 ― 0.22 0.44 ― 0.50 1.00 ― 0.23 0.35 Transistor stage ― ― 1.04 Diode stage ― ― 2.00 ― 0.05 ― Input capacitance Cies Reverse current Forward voltage Rise time Turn-on time Switching time Fall time Turn-off time Reverse recovery time Thermal resistance tr ton tf toff Inductive load VCC = 300V IC = 50A VGE = ±15V RG = 24Ω (Note 1) trr Rth (j-c) Rth (c-f) Case to fin (Note 2) µs °C / W Note 2: Silicone grease is applied. 3 2001-08-16 MG150J7KS50 Note 1: Switching Time Test Circuit &Timing Chat 4 2001-08-16 MG150J7KS50 Package Dimensions TOSHIBA 2-110A1B Unit: mm 5 2001-08-16 MG150J7KS50 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2001-08-16