CEL NE97733 Pnp silicon high frequency transistor Datasheet

SILICON TRANSISTOR
NE97733
PNP SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 8.5 GHz TYP
• HIGH SPEED SWITCHING CHARACTERISTICS
• NPN COMPLIMENT AVAILABLE: NE68133
• HIGH INSERTION POWER GAIN:
|S21E|2 = 12 dB at 1 GHz
33 (SOT 23 STYLE)
DESCRIPTION
The NE97733 PNP silicon transistor is designed for
ultrahigh speed current mode switching applications and
microwave amplifiers up to 3.5 GHz. The NE97733 offers
excellent performance and reliability at low cost.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
NE97733
2SA1977
33
UNITS
MIN
TYP
GHz
6.0
8.5
fT
Gain Bandwidth Product at VCE = -8 V, IC = -20 mA
NF
Noise Figure at VCE = -8 V, IC = -3 mA
dB
Insertion Power Gain at VCE = -8 V, IC = -20 mA, f = 1 GHz
dB
|S21E|2
1.5
8.0
12.0
20
40
MAX
3.0
hFE
Forward Current Gain Ratio at VCE = -8 V, IC = -20 mA
ICBO
Collector Cutoff Current at VCB = -10 V, IE = 0
μA
-0.1
IEBO
Emitter Cutoff Current at VBE = -1 V, IC = 0
μA
-0.1
CRE2
PT
Feedback Capacitance at VCB = -10 V, IE = 0 mA, f = 1 MHz
Total Power Dissipation
pF
mW
Notes:
1. Electronic Industrial Association of Japan.
2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
0.5
100
0.1
200
NE97733
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
-20
VCEO
Collector to Emitter Voltage
V
-12
VEBO
Emitter to Base Voltage
V
-3
IC
Collector Current
mA
-50
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +200
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
DC CURRENT GAIN vs.
COLLECTOR CURRENT
100
VCE = -8V
DC Current Gain, HFE
SYMBOLS
50
40
30
20
10
5
4
3
2
1
-0.1
-1.0
-10
-100
-1000
Collector Current, IC (mA)
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INSERTION GAIN vs.
FREQUENCY
DC POWER DERATING CURVES
35
FREE AIR
Insertion Power Gain, |S21E|2 (dB)
Total Power Dissipation, PT (mW)
400
300
200
NE97733
100
0
VCE = -8 V
IC = -20 mA
30
25
20
15
10
5
0
-5
-10
-15
0
50
100
150
0.1
200
Ambient Temperature, TA (°C)
0.3 0.4 0.5
15
Insertion Power Gain, |S21E|2 (dB)
8
6
4
2
0
Collector Current, IC (mA)
3.0
VCE = -8 V
f = 1 GHz
VCE = -8 V
-10
2.0
INSERTION GAIN vs.
COLLECTOR CURRENT
10
-1
1.0
Frequency, f (GHz)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
Gain Bandwidth Product, fT (GHz)
0.2
-100
10
5
0
-1
-10
Collector Current, IC (mA)
100
NE97733
TYPICAL PERFORMANCE CURVES (TA = 25°C)
DC Current Gain, HFE
100
50
40
30
Collector Feed-back Capacitance, CRE (pF)
DC CURRENT GAIN VS.
COLLECTOR CURRENT
VCE = -3 V
VCE = -2 V
VCE = -1 V
20
10
1.0
-0.1
-100
-10
-1.0
-1000
OUTPUT CAPACITANCE VS.
COLLECTOR TO BASE VOLTAGE
1.5
f = 1 MHz
1
0.5
0
-10
-1
-100
Collector to Base Voltage, VCB (V)
Collector Current, IC (mA)
SWITCHING CHARACTERISTICS
Parameter
Symbol
Vin = 1 V
TYP
Unit
Turn-on Delay Time
tON (delay)
1.08
ns
Rise Time
tr
0.66
ns
Turn-off Delay Time
tOFF (delay)
0.32
ns
Fall Time
tf
0.78
ns
SWITCHING TIME MEASUREMENT CIRCUIT
VCC (-)
RC1
RC2
VIN
VOUT
VIN
RS
20 ns
RL2
tON (delay)
RL1
tr
50 Ω
Sampling
Oscilloscope
VBB (-)
VOUT
RE
VEE (+)
VIN = 1 v, VBB = -0.5 V, RC1 = RC2
RS
(Ω)
RC
(Ω)
RL1
(Ω)
RL2
(Ω)
RE
(Ω)
VEE
(V)
VCC
(V)
160
1K
200
250
2.7 K
27
26.3
tf tOFF (delay)
NE97733
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
90˚
1
0.8
1.5
0.6
2
135˚
0.4
45˚
S21
3
4
S12
5
0.2
0.2
0.4
0.6
0.8 1
1.5
2
3
4 5
10
20
50
10 20 -50
180˚
0.1 0.2 0.3
0.4 0.5
0˚
-20
1.0
-10
S22
-5
-0.2
2.0
-4
S11
-3
97733
VCE = -8 V, IC = -3 mA
-0.4
-2
-0.6
-1.5
-0.8
3.0
315˚
225˚
4.0
-1
270˚
VCE = -1 V, IC = -5 mA
FREQUENCY
(GHz)
0.50
0.80
1.00
1.50
2.00
2.50
3.00
4.00
5.00
S11
MAG
0.428
0.382
0.374
0.387
0.419
0.461
0.502
0.552
0.574
S21
ANG
-126.3
-160.6
-175.9
155.1
132.6
114.5
100.2
82.6
74.2
MAG
4.899
3.398
2.813
2.002
1.583
1.323
1.148
0.948
0.859
S12
S22
K
MAG1
ANG
100.7
82.8
74.1
56.8
42.6
30.6
21.0
7.0
-4.4
MAG
0.101
0.132
0.154
0.213
0.274
0.336
0.393
0.501
0.599
ANG
52.7
54.1
55.0
54.6
51.3
46.5
40.9
29.4
16.0
MAG
0.417
0.309
0.272
0.230
0.226
0.247
0.270
0.267
0.218
ANG
-54.0
-60.2
-64.5
-80.1
-100.1
-119.0
-133.8
-159.3
155.9
0.77
0.97
1.04
1.09
1.07
1.04
1.01
0.98
0.98
(dB)
16.8
14.1
11.5
7.9
6.0
4.8
4.1
2.8
1.6
VCE = -5 V, IC = -10 mA
0.50
0.80
1.00
1.50
2.00
2.50
3.00
4.00
5.00
0.251
0.213
0.207
0.225
0.265
0.316
0.365
0.428
0.462
-126.4
-159.9
-176.4
151.5
127.7
109.8
96.8
82.3
77.7
7.121
4.739
3.878
2.708
2.116
1.754
1.511
1.218
1.074
99.1
84.5
77.3
62.5
49.8
38.6
28.8
13.5
0.8
0.072
0.107
0.131
0.191
0.252
0.310
0.364
0.467
0.566
67.8
68.2
67.6
64.2
59.4
53.5
47.5
36.4
24.3
0.426 -38.9
0.350 -39.9
0.324 -41.9
0.288 -52.1
0.272 -67.9
0.275 -85.3
0.284 -100.1
0.269 -121.5
0.171 -148.4
0.91
1.00
1.03
1.04
1.03
1.00
0.98
0.95
0.94
19.9
16.0
13.7
10.3
8.2
7.2
6.2
4.2
2.8
-74.0
-111.0
-131.4
-174.7
151.1
125.4
106.9
85.0
74.6
4.205
3.520
3.075
2.293
1.824
1.516
1.301
1.038
0.930
119.4
97.8
87.0
67.2
51.9
39.0
28.4
13.9
3.7
0.088
0.109
0.122
0.157
0.202
0.256
0.314
0.438
0.573
54.6
51.8
52.6
56.0
57.8
56.7
53.7
44.7
32.3
0.673 -32.7
0.558 -38.2
0.512 -41.0
0.451 -49.9
0.427 -62.0
0.425 -76.0
0.433 -89.1
0.425 -110.2
0.328 -133.5
0.56
0.79
0.91
1.05
1.06
1.01
0.96
0.90
0.91
16.8
15.1
14.0
10.2
8.0
7.0
6.2
3.7
2.1
-140.9
-172.1
172.1
141.7
119.7
104.0
92.5
80.9
79.2
8.095
5.268
4.288
2.974
2.317
1.918
1.652
1.332
1.169
95.5
83.1
76.7
63.2
51.4
40.7
31.2
15.8
2.6
0.067
0.105
0.129
0.191
0.252
0.309
0.362
0.459
0.552
74.7
73.5
72.2
66.9
60.8
54.6
48.4
36.9
25.3
0.389 -34.1
0.334 -34.1
0.315 -36.1
0.285 -46.2
0.269 -61.6
0.268 -79.2
0.274 -94.3
0.257 -114.2
0.154 -134.6
0.98
1.02
1.03
1.03
1.02
1.00
0.98
0.95
0.94
20.8
16.2
14.1
10.9
8.9
7.9
6.6
4.6
3.3
VCE = -8 V, IC = -3 mA
0.50
0.80
1.00
1.50
2.00
2.50
3.00
4.00
5.00
0.626
0.447
0.374
0.302
0.310
0.355
0.407
0.428
0.503
VCE = -8 V, IC = -20 mA
0.50
0.80
1.00
1.50
2.00
2.50
3.00
4.00
5.00
0.151
0.140
0.142
0.170
0.215
0.268
0.318
0.379
0.416
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE97733
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 33
(SOT-23)
OUTLINE 33
RECOMMENDED P.C.B. LAYOUT
2.4
+0.2
2.8 -0.3
2.9 ± 0.2 0.95
2
2
1.9
3
3
+0.10
0.4 -0.05
(ALL LEADS)
1.9
0.95
1
+0.2
1.5 -0.1
+0.10
0.65 -0.15
0.8
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
1.1 to 1.4
0.8
0 to 0.1
1
1.0
+0.10
0.16 -0.06
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKAGING
NE97733-T1B-A
3000
Tape & Reel
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
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PRINTED IN USA ON RECYCLED PAPER -7/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE
3-174
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