2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3767 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 kΩ) VDGR 600 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 2 Pulse (Note 1) IDP 5 Drain power dissipation (Tc = 25°C) PD 25 W Single pulse avalanche energy (Note 2) EAS 93 mJ Avalanche current IAR 2 A Repetitive avalanche energy (Note 3) EAR 4 mJ JEDEC Channel temperature Tch 150 °C JEITA Storage temperature range Tstg -55~150 °C TOSHIBA Drain current A 1: Gate 2: Drain 3: Source ― SC-67 2-10U1B Weight : 1.7 g (typ.) Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 5.0 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W Note 1: 2 Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = 90 V, Tch = 25°C（initial））, L = 41mH, RG = 25 Ω , IAR = 2 A 1 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 3 1 2004-12-10 2SK3767 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Typ. Max Unit ±10 µA VGS = ±25 V, VDS = 0 V ⎯ ⎯ V (BR) GSS IG = ±10 µA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 600 V, VGS = 0 V ⎯ ⎯ 100 µA ⎯ ⎯ V Drain cut-off current Drain-source breakdown voltage Min IGSS Gate leakage current Gate-source breakdown voltage Test Condition V (BR) DSS ID = 10 mA, VGS = 0 V 600 Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 1 A ⎯ 3.3 4.5 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 1 A 0.8 1.6 ⎯ S ⎯ 320 ⎯ ⎯ 30 ⎯ ⎯ 100 ⎯ ⎯ 15 ⎯ ⎯ 55 ⎯ ⎯ 20 ⎯ ⎯ 80 ⎯ ⎯ 9 ⎯ ⎯ 5 ⎯ ⎯ 4 ⎯ Gate threshold voltage Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time tr Turn-on time Fall time ton tf Turn-off time ID = 1A 10 V VGS 0V Duty < = 1%, tw = 10 µs toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd pF Output RL = 200 Ω 50 Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz VDD ∼ − 200 V VDD ∼ − 400 V, VGS = 10 V, ID = 2A ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 2 A IDRP ⎯ ⎯ ⎯ 5 A Pulse drain reverse current (Note 1) Forward voltage (diode) VDSF IDR = 2 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 2 A, VGS = 0 V, ⎯ 1000 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/µs ⎯ 3.5 ⎯ µC Marking K3767 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-12-10 2SK3767 ID – VDS ID – VDS 2 4 5.5 10 6 Pulse test (A) 5.25 ID 3 1.2 5 0.8 5.5 Drain current Drain current ID (A) 6 10 1.6 Common source Tc = 25°C 4.75 4.5 0.4 4 8 5.25 5 1 4.75 Common source Tc = 25°C Pulse test VGS = 4V 0 0 2 12 Drain-source voltage 16 20 VDS (V) 4.5 VGS = 4V 0 0 24 8 4 Drain-source voltage ID – VGS VDS (V) 24 Common source (V) VDS = 20 V Pulse test 3 2 −55 Tc=100℃ 1 25 0 0 Tc = 25℃ 16 Drain current voltage VDS Drain current ID (A) 20 VDS – VGS Common source 2 4 6 Gate-source voltage 8 VGS 12 8 ID = 2A 1 4 0 0 10 Pulse test (V) 4 8 0.5 12 16 Gate－source voltage VGS 20 (V) RDS (ON) – ID ⎪Yfs⎪ – ID 10 100 Common source Tc = 25°C Drain source ON resistance RDS (ON) (Ω) Forward transfer admittance⎪Yfs⎪ (S) 16 20 5 4 12 Tc = −55°C 1 100 25 0.1 Common source 10 VGS=10V VDS = 20 V Pulse test 0.01 0.01 Pulse test 0.1 Drain current 1 ID 1 0.01 10 (A) 0.1 Drain current ID 3 1 10 (A) 2004-12-10 2SK3767 RDS (ON) – Tc IDR – VDS 10 10 Common source (A) VGS =10V pulse test 8 6 ID=2A 1 4 0.5 2 0 -100 Tc = 25°C Pulse test Drain reverse current IDR Drain-source ON resistance RDS (ON) (Ω) Common source -50 0 50 Case temperature 100 150 1 10 0.1 3 1 VGS = 0, −1 V 0.01 0 200 −0.4 (°C) Drain-source voltage Capacitance – VDS −1.6 −1.2 −0.8 (V) Vth – Tc 1000 6 Common source (V) 100 Coss 10 Common source Crss VGS = 0 V f = 1 MHz Tc = 25°C 10 Drian-source voltage 3 2 1 0 −80 100 VDS Pulse test (V) −40 40 80 Case temperature Tc 120 150 (°C) Dynamic Input / output characteristics PD – Tc 50 800 Drain-source voltage VDS (V) (W) Drain power dissipation PD 0 40 30 20 10 0 0 40 80 Case temperature 120 Tc 200V (°C) 12 600 100V 400 Common source 4 ID = 7.5 A Tc = 25°C Pulse test 0 2 4 6 Total gate charge 4 8 VDD = 400V 200 0 160 16 VGS (V) 1 ID = 1 mA 4 Gate-source voltage 1 0.1 VDS = 10 V 5 Gate threshold voltage Vth Capacitance C (pF) Ciss 10 8 Qg 0 12 (nC) 2004-12-10 2SK3767 Normalized transient thermal impedance rth (t)/Rth (ch-c) rth – tw 10 3 Duty=0.5 1 0.2 0.3 0.1 0.1 0.05 0.03 PDM 0.02 t SINGLE PULSE 0.01 T 0.01 Duty = t/T Rth (ch-c) = 5℃/W 0.003 0.001 10μ 100μ 1ｍ 10ｍ Pulse width 100ｍ tw Safe operating area (mJ) 100 µs * Avalanche energy Drain current ID (A) EAS ID max (PULSED) * ID max (CONTINUOUS) * 1 DC OPERATION Tc = 25°C 1 ms * 10 EAS – Tch 200 100 10 1 (s) 160 120 80 40 0 0.1 25 50 75 100 125 150 ※ Single nonrepetitive pulse Channel temperature (initial) Tc=25℃ Tch (°C) Curves must be derated linearly with increase in temperature. 0.01 1 10 VDSS max Darin-source voltage VDS 15 V 1000 100 (V) BVDSS IAR −15 V VDD TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 41mH 5 VDS WAVE FORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V DD ⎠ ⎝ VDSS 2004-12-10 2SK3767 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2004-12-10