TLP590B TOSHIBA Photocoupler GaAℓAs Ired & Photo−Diode Array TLP590B Telecommunication Programmable Controllers Mos Gate Driver MOS FET Gate Driver Unit in mm The TOSHIBA TLP590B consists of an aluminum galium arsenide infrared emitting diode optically coupled to a series connected photo− diode array in a six lead plastic DIP package. TLP590B is suitable for MOS FET gate driver. • UL recognized: UL1577, file No. E67349 Short Current Type Name Short Current Classification (min.) C20 20μA Standard 12μA TLP590B IF 10mA Marking Of Classification 20 TOSHIBA 20, blank 11−7A9 Weight: 0.39g (Note) Application type name for certification test, please use standard product type name, i.e. TLP590B(C20): TLP590B Maximum Ratings (Ta = 25°C) Characteristics Pin Configuration(top view) Symbol Rating Unit IF 50 mA ΔIF / °C −0.5 mA / °C Pulse forward current (100μs pulse, 100 pps) IFP 1 A Reverse voltage VR 3 V Junction temperature Tj 125 °C Foward current IFD 50 μA Reverse voltage VRD 10 V Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −40~85 °C Lead soldering temperature (10sec.) Tsol 260 °C BVS 2500 Vrms Forward current Detector LED Forward current derating (Ta ≥ 25°C) Junction temperature Isolation voltage (AC, 1 min., R.H. ≤ 60%) (Note 1) (Note 1) 6 1 2 3 4 1. : Anode 2. : Cathode 3. : NC 4. : Cathode 6. : Anode Device considered a two terminal device: Pins 1, 2 and 3 shorted together, and pins 4 and 6 shorted together. 1 2002-09-25 TLP590B Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit IF ― 20 25 mA Topr −25 ― 85 °C Forward current Operating temperature Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.2 1.4 1.7 V Reverse current IR VR = 3 V — — 10 μA Capacitance CT V = 0, f = 1 MHz — 30 60 pF Forward voltage VFD IFD = 10 μA — 7 — V Reverse current IRD VRD = 10 V — 1 — nA Capacitance (anode to cathode) CTD V = 0, f = 1 MHz — — — pF Min. Typ. Max. Unit Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Open voltage VOC IF = 10 mA 7.0 8.0 — V Short current ISC IF = 10 mA 12 20 — μA Min. Typ. Max. Unit — 0.8 — pF — Ω Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance input to output CS Isolation resistance Test Condition VS = 0, f = 1 MHz RS VS = 500 V, R.H. ≤ 60% 5×10 AC, 1 minute Isolation voltage BVS 10 10 14 2500 — — AC, 1 second in oil — 5000 — DC, 1 minute in oil — 5000 — Vdc Min. Typ. Max. Unit — 0.2 — ms — 1 — ms Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Turn−on time ton Turn−off time Test Condition IF = 20mA, RSH = 510kΩ CL =1000pF toff (Fig.1) Fig. 1 Switching time test circuit IF VOUT RSH CL IF VOUT 0V RSH : External shunt tON resistance 2 5V 1V tOFF 2002-09-25 TLP590B IF – Ta Allowable forward current IF (mA) 80 60 40 20 0 −20 ΔVF / ΔTa – IF −4.0 Forward voltage temperature coefficient ΔVF / ΔTa (mV / ℃) 100 −3.6 −3.2 −2.8 −2.4 −2.0 −1.6 −1.2 −0.8 0 20 40 60 80 100 0.1 0.3 IF – VF Pulse forward current IFP (mA) (mA) Forward current IF Ta = 25°C 30 10 5 3 1.4 1.6 1.8 Forward voltage VF 2.0 Ta = 25°C 500 300 100 50 30 10-3 3 10-2 3 Duty cycle ratio (V) 3 (mA) 1000 3 2.2 IF 30 10 5 Pulse width ≤ 100μs 3000 10 1.2 3 IFP – DR 5000 50 1 1.0 1 Forward current Ambient temperature Ta (℃) 100 0.5 10-1 3 100 DR 2002-09-25 TLP590B t IO – VO Ta = 25°C RSH=2.4MΩ IF = 0mA 0 t 5mA Switching time Otuput current t ON , OFF (ms) 20 IO (μA) 40 10mA −20 15mA 20mA −40 25mA −60 0 2 4 6 Output voltage VO 8 10 3 IF=20mA RSH IF 300kΩ 510kΩ 1MΩ 2.4MΩ 0.1 0.03 VOUT 0V 300 10 3 3000 104 Short current ISC 300kΩ 2 Ta = 25°C 0 1 3 5 10 30 Forward current IF ISC – IF 10 5 3 1 0.5 0.3 50 Ta = 25°C 0.1 1 100 3 5 VOC – Ta 10 20 Short current ISC (μA) 24 4 2 0 20 40 60 80 30 100 100 (mA) 16 12 8 0 120 50 ISC – Ta 4 IF = 10mA −20 10 Forward current IF (mA) 12 (V) (pF) (μA) (V) 510kΩ 4 VOC 1V tOFF tON 102 RSH=2.4MΩ Open voltage 5V 30 6 0 CL 50 1MΩ 6 VOUT 0.3 100 8 8 OFF ON Ta = 25°C IF = 20mA t 1 Load capacitance CL RSH open t 1MΩ 510kΩ 300kΩ (V) VOC – IF VOC 30 0.01 10 10 Open voltage t ON , OFF – CL 100 IF = 10mA −20 0 20 40 60 80 100 120 Ambient temperature Ta (℃) Ambient temperature Ta (℃) 4 2002-09-25 TLP590B RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2002-09-25