Fairchild FPAB30BH60 Smart power module(spmâ®) for front-end rectifier Datasheet

FPAB30BH60
Smart Power Module(SPM®) for Front-End Rectifier
General Description
Features
FPAB30BH60 is an advanced smart power module(SPM®)
of PFC(Power Factor Correction) that Fairchild has newly
developed and designed mainly targeting mid-power
application especially for an air conditioners. It combines
optimized circuit protection and drive IC matched to high
frequency switching IGBTs. System reliability is futher
enhanced by the integrated under-voltage lock-out and
over-current protection function.
• Low thermal resistance due to Al2O3-DBC substrate
• 600V-30A 1-phase IGBT PWM semi-converter including
a drive IC for gate driving and protection
• Typical switching frequency of 20kHz
• Isolation rating of 2500Vrms/min.
Applications
• AC 85V ~ 264V single-phase front-end rectifier
Fig. 1.
©2007 Fairchild Semiconductor Corporation
FPAB30BH60 Smart Power Module (SPM®)
December 2007
• PFC converter for single-phase AC/DC power conversion (Please refer to Fig. 3)
Integrated Drive, Protection and System Control Functions
• For IGBTs: Gate drive circuit, Overcurrent circuit protection (OC), Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to a UV fault
• Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
Top View
V CC
COM
COM
COM
IN
VFO
CFOD
CSC
P
P
N.C.
R TH
V TH
L
N.C.
N.C.
N
N
N
N
NR
NR
PR
R
NR
NR
S
Fig. 2.
©2007 Fairchild Semiconductor Corporation
FPAB30BH60 Smart Power Module (SPM®)
Integrated Power Functions
FPAB30BH60 Smart Power Module (SPM®)
Pin Descriptions
Pin Number
1
Pin Name
VCC
Pin Description
Common Bias Voltage for IC and IGBTs Driving
2,3,4
COM
Common Supply Ground
5
IN(R)
Signal Input for Low-side R-phase IGBT
6
VFO
Fault Output
7
CFOD
Capacitor for Fault Output Duration Time Selection
8
CSC
Capacitor (Low-pass Filter) for Over Current Detection
9
R(TH)
NTC Thermistor terminal
10
V(TH)
NTC Thermistor terminal
11,12
N.C
No Connection
13~16
N
IGBT emitter
17~20
NR
Negative DC-Link of Rectifier
21,22
P
23
N.C
24
L
25
PR
Positive DC–Link of Rectifier
26
R
AC input for R-phase
27
S
AC input for S-phase
Positive Rail of DC–Link
No Connection
Reactor connection pin
* 11th and 12th pins are cut. Please refer to package outline drawings for more detail.
Internal Equivalent Circuit and Input/Output Pins
VTH
RTH
NTC
Thermistor
P
CSC
CSC
CFOD
VFO
IN
COM
L
CFOD
PR
VFO
IN(S)
OUT
R
COM
S
VCC
VCC
N
NR
Fig. 3.
Package Marking & Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FPAB30BH60
FPAB30BH60
SPM27-IA
-
-
10
©2007 Fairchild Semiconductor Corporation
Unless Otherwise Specified)
Converter Part
Supply Voltage
Item
Symbol
Vi
Condition
Applied between R-S
Supply Voltage (Surge)
Vi(Surge)
VPN
VPN(Surge)
Output Voltage
Output Voltage (Surge)
Collector-emitter Voltage
Rating
264
Unit
VRMS
Applied between R-S
500
V
Applied between P- N
450
V
Applied between P- N
500
V
600
V
TC < 95°C, Vi=220V, VPN= 390V,
VPWM=20kHz
25
A
TC < 95°C, Vi=220V, VPN= 390V,
VPWM=20kHz, 1min Non-repetitive
30
A
VCES
Input Current (100% Load)
Ii
Input Current (125% Load)
Ii(125%)
Collector Dissipation
PC
TC = 25°C per One IGBT
Operating Junction Temperature
TJ
(Note 1)
169
W
-20 ~ 150
°C
Note
1. The maximum junction temperature rating of the power chips integrated within the SPM® is 150 °C(@TC ≤ 100°C). However, to insure safe operation of the SPM®,
the average junction temperature should be limited to TJ(ave) ≤ 125°C (@TC ≤ 100°C)
Control Part
Item
Control Supply Voltage
Symbol
Condition
VCC
Applied between VCC - COM
Input Signal Voltage
VIN
Applied between IN - COM
Fault Output Supply Voltage
VFO
Applied between VFO - COM
Fault Output Current
IFO
Sink Current at VFO Pin
Current Sensing Input Voltage
VSC
Applied between CSC - COM
Rating
20
Unit
V
-0.3~5.5
V
-0.3~VCC+0.3
V
5
mA
-0.3~VCC+0.3
V
Total System
Item
Module Case Operation Temperature
Symbol
TC
Storage Temperature
TSTG
Isolation Voltage
VISO
Condition
Rating
-20 ~ 100
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to DBC
Unit
°C
-40 ~ 125
°C
2500
Vrms
Thermal Resistance
Item
Junction to Case Thermal
Resistance
(Referenced to PKG center)
Symbol
Rθ(j-c)Q
Rθ(j-c)F
Rθ(j-c)R
Condition
IGBT
Max.
0.74
Unit
°C/W
FRD
-
-
1.44
°C/W
Rectifier
-
-
2.07
°C/W
Note :
2. For the measurement point of case temperature(TC), please refer to Fig. 2.
©2007 Fairchild Semiconductor Corporation
Min. Typ.
-
FPAB30BH60 Smart Power Module (SPM®)
Absolute Maximum Ratings (TJ = 25°C,
Converter Part
Item
IGBT saturation voltage
Symbol
VCE(sat)
Condition
VCC =15V, VIN = 5V; IC =30A
Min.
-
Typ.
2.0
Max.
2.8
Unit
V
FRD forward voltage
VFF
IF = 30A
-
1.8
2.5
V
Rectifier forward voltage
VFR
IF = 30A
-
1.2
1.5
V
Peak surge current
IFSM
Non-repetitive, 60Hz single half-sine wave
200
-
-
A
Switching Times
tON
VPN = 400V, VCC = 15V, IC =30A
VIN = 0V ↔ 5V, Inductive Load
-
650
-
ns
-
400
-
ns
(Note 3)
-
620
-
ns
tC(OFF)
-
200
-
ns
trr
-
60
-
ns
Irr
-
3.5
-
A
-
-
250
μA
tC(ON)
tOFF
Collector - emitter
Leakage Current
ICES
VCE = VCES
Note
3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition
internally. For the detailed information, please see Fig. 4
Control Part
Item
Symbol
Condition
Quiescent VCC Supply Cur- IQCCL VCC = 15V, IN = 0V VCC - COM
rent
Fault Output Voltage
Min.
-
Typ.
-
Max.
26
Unit
mA
VFOH
VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up
4.5
-
-
V
VFOL
VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up
-
-
0.8
V
Over Current Trip Level
VSC(ref)
VCC = 15V
0.45
0.5
0.55
V
Supply Circuit UnderVoltage Protection
UVCCD
Detection Level
10.7
11.9
13.0
V
UVCCR
Reset Level
11.2
12.4
13.2
V
Fault-out Pulse Width
tFOD
CFOD = 33nF (Note 4)
1.4
1.8
2.0
ms
Applied between IN - COM
3.0
-
-
V
-
-
0.8
V
@ TC = 25°C (Note Fig. 9)
-
50
-
kΩ
@ TC = 100°C (Note Fig. 9)
-
2.99
-
kΩ
ON Threshold Voltage
VIN(ON)
OFF Threshold Voltage
VIN(OFF)
Resistance of Thermistor
RTH
Note
4. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F]
©2007 Fairchild Semiconductor Corporation
FPAB30BH60 Smart Power Module (SPM®)
Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)
FPAB30BH60 Smart Power Module (SPM®)
Electrical Characteristics
Irr
120% of IC
100% of IC
VCE
IC
90% of IC
15% of VCE
IC
10% of IC
VCE 15% of VCE
10% of IC
VIN
VIN
tON
trr
tC(OFF)
tC(ON)
tOFF
(a) Turn-on
(b) Turn-off
Fig. 4. Switching Time Definition
Mechanical Characteristics and Ratings
Item
Limits
Condition
Mounting Torque
Mounting Screw: - M3
Device Flatness
Note Fig. 5
Recommended 0.62N•m
Weight
Typ.
0.62
Max.
0.72
0
-
+120
μm
-
15.00
-
g
(+)
(+)
(+)
Fig. 5. Flatness Measurement Position
©2007 Fairchild Semiconductor Corporation
Units
Min.
0.51
N•m
In p u t S ig n a l
In te rn a l IG B T
G a te -E m itte r V o lta g e
P3
C o n tro l S u p p ly V o lta g e
P2
UV
re s e t
P5
UV
d e te c t
P6
P1
O u tp u t C u rr e n t
P4
F a u lt O u tp u t S ig n a l
P1 : Normal operation - IGBT ON and conducting current
P2 : Under voltage detection
P3 : IGBT gate interrupt
P4 : Fault signal generation
P5 : Under voltage reset
P6 : Normal operation - IGBT ON and conducting current
Fig. 6. Under-Voltage Protection
P5
In p u t S ig n a l
P6
In te r n a l IG B T
G a t e - E m itt e r V o lt a g e
O C D e te c t io n
P1
P4
P7
O u tp u t C u r r e n t
P2
O C R e fe re n c e
V o lt a g e ( 0 . 5 V )
S e n s in g V o lta g e
R C F ilt e r D e la y
F a u lt O u t p u t S ig n a l
P3
P1 : Normal operation - IGBT ON and conducting current
P2 : Over current detection
P3 : IGBT gate interrupt / Fault signal generation
P4 : IGBT is slowly turned off
P5 : IGBT OFF signal
P6 : IGBT ON signal - but IGBT cannot be turned on during the fault Output activation
P7 : IGBT OFF state
P8 : Fault Output reset and normal operation start
Fig. 7. Over Current Protection
©2007 Fairchild Semiconductor Corporation
P8
FPAB30BH60 Smart Power Module (SPM®)
Time Charts of SPMs Protective Function
FPAB30BH60 Smart Power Module (SPM®)
Fig. 8. Application Example
R-T Graph
120
Resistance [kΩ]
100
80
60
40
20
0
20
30
40
50
60
70
80
90 100 110 120 130
Temperature [°C]
Fig. 9. R-T Curve of the Built-in Thermistor
©2007 Fairchild Semiconductor Corporation
©2007 Fairchild Semiconductor Corporation
FPAB30BH60 Smart Power Module (SPM®)
Detailed Package Outline Drawings
©2007 Fairchild Semiconductor Corporation
FPAB30BH60 Smart Power Module (SPM®)
Detailed Package Outline Drawings
©2007 Fairchild Semiconductor Corporation
FPAB30BH60 Smart Power Module (SPM®)
Detailed Package Outline Drawings
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.
Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2.
A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
©2007 Fairchild Semiconductor Corporation
Rev. H1
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