TB31262F TOSHIBA Bi- CMOS Integrated Circuit Silicon Monolithic TB31262F RF 1chip IC for 900 MHz Cordless Telephone One package involve three systems about RF, IF, and AF. Involving LNA, MIX, PA, VCO (TX,RX), PLL, IF-AMP, Detecter, Compander,and 4 useful audio amplifiers. It is possible to reduce many external parts. This IC is suitable for ISM 900 MHz cordless telephone. Features • • Same system & software almost compatible as TB31261AF (Single Conversion, IF Frequency: 10.7 MHz,) Built-in LNA • Built-in 1’st MIX → Double Balanced MIX (DBM) Type. • Built-in Differential VCO, Variable capacitor (TX, RX) and Doubler (450 MHz × 2) • QFP52-P-1010-0.65 Built-in PA • A substitution from TB31261AF is easy (Same package, Software almost compatible) • Low operating voltage: V CC = 2.0~5.0 V • • Current operating current: ICC = 70 mA (All On) PLL operating frequency :around 450 MHz • Serial control for all status • • Built in pre-amp, receiver-amp, mic-amp, and spl-amp Receiver output Level adjustment. • Variable battery alarm setting. (7 thresholds) • • Built in battery saving function for Intermittent receiving. Small package: QFP52pin (0.65 mm pitch) ＊Handle with care to prevent devices from deterioration by static electricity. 1 2001-12-26 TB31262F Block Diagram C43 RXVCO RXVCO 10n R12 C27 G − L2 − L1 4.7k 27n R X-VCC C22 10.7MHz C21 VCC1C48 10.7MHz C28 100n CF G 10µ 47p C29 E-RECT C18 CF C19 100n C24 C23 17 16 R X -G N D 2.2 µ C20 I F-AMP I F-AMP1 I F-AMP1 10n 2.2n 2.2n 100n R X-LOOP 47p 2.2µ I F-AMP2 R E F 10µ OUT IN IN C-RECT 39 38 37 36 35 34 33 32 31 30 29 28 27 C44 8.2n L8 VREF 47p 450MHzOSC I F-AMP2 C30 40 26 Balanced Connectable (1’st) LNA-C MIX-OUT Phase Bias Differential RX VCO Compalator VCC3 I F-AMP1 GND1 C17 C16 41 25 Gv = 24dB Divider LNA 100p R8 100n Buffer Double ( × 2) 100K LNA-E 42 24 DATA -OUT 900MHz Gv DATA -COMP R9 R11 C15 Ω LNA-B 0 1n RSSI 43 23 C45 1n Matching Network LPF 3p C31 L9 15n C 3 4 C33 100n 10 µ VR2 38kohm R13 C37 1 µ VCC2 C35 18n 47 Det Coil P i-Matching Network C39 C38 100n 10 µ SIG -OUT 22 R7 100k 21 CLK 20 DATA Differential TX OSC FEED BACK C36 100k 1 µ DC-CUT P R E-IN 46 3kohm I F-AMP2 1’ st, 2’nd Amount Gv = 72dB P R E-AMP A F-OUT 470kΩ DATA LATCH CONTROL 22pF 19 STB LPF:Fc = 15kHz QUAD DUP 44 R14 DATA -IN 45 39k R17 MAX 50 kΩ (EX) ANT R10 Double Balanced MIX C32 R17 48 I F-AMP2 (2’nd) QUAD 18 8.2k C40 49 T X-MUTE R15 1 µ SOFT VOLUME (ATT) 220k Ω 50 EXP -OUT R16 330kΩ EXP 900MHz FREQ 16 S P L -AMP T XMUTE RECEIVER 2 40pF 2 3 P A-OUT1 P A-OUT2 BI BI C2 PASS PASS 1n 11 3.3n C3 5p C4 Divider P A-GAIN-CONT T C46 C47 VR1 Phase Differential TX OSC Compalator Balanced Connectable to MIX MIC OUT 15 2.2 µ 14 MIC IN 50K 1n 47p B i-Pass C-N P C13 2.2 µ 1k R6 C12 1 µ C11 T X−LOOP 1 C1 P A -VCC 47p L3 10n GND2 MIC -AMP COMP R RECEIVER 1 P i-Matching Network 17 R E F-IN 450MHz MOD C41 220pF 52 C5 3p Doubler ( × 2) Buffer 51 DYNAMIC RECEIVR C14 DC-CUT 1µ 4 12 3.3n 6 7 8 9 10 S P L COMP FEED R2 B A C K 470k IN OUT T X-VCC C8 C10 C26 1 µ C7 DC-CUT 47p LPF R4 R1 L P F R5 R3 100p 15k 0 39k 470k DC-CUT GAIN C6 C9 SETTING 1 µ LPF MIC IN GAIN SETTING SPL OUT P A -G N D C42 3p 5 2 11 C25 10n 12 14 2.2n 13 15 2.2n T X− G N D TXVCO TXVCO − L1 − L2 2001-12-26 TB31262F Pin Function (The values of internal components are typical) Pin No. Pin Name 1 PA-V CC V CC terminal 2 PA-OUT1 Differential output terminal1 of Power Amp 3 PA-OUT2 Differential output terminal2 of Power Amp 4 PA-GND GND terminal 5 SPL-OUT Output terminal of Splatter Amp 6 SPL-IN Function Internal Equivalent Circuit 1 2 3 300 Ω 6 VCO GND1 100 µA 300 Ω 40 µA 300 Ω 5 SPL-OUT 4 Input terminal of Splatter Amp 14 4 V CC1 200 Ω COMP-OUT Output terminal of Compressor 7 100 µA 7 Output terminal of MIC Amp 8 9 MIC-IN Input terminal of MIC Amp 10 µA MIC-OUT 30 kΩ 8 200 µA GND1 300 Ω V CC1 9 300 Ω GND1 3 2001-12-26 TB31262F Pin No. Pin Name 10 TX-V CC 11 TXVCO-L1 Terminal1 for external inductor of differential TXVCO 12 TXVCO-L2 Terminal2 for external inductor of differential TXVCO Function Internal Equivalent Circuit 10 V CC terminal 5 SPL OUT 14 TX LOOP 13 TX-GND GND terminal 11 13 12 V CC3 VCO 14 TX-LOOP 14 Terminal1 for TX loop filter V CC1 C-NF Terminal for compressor’s negative feedback capacitor V REF 30 kΩ 30 kΩ 10 µA 15 15 200 µA GND2 GND1 PA gain control terminal for external variable resistance to GND 16 PA-GAIN-CONT 17 GND2 GND terminal 18 REF-IN Reference clock input terminal 16 10 kΩ 18 4 500Ω 100kΩ 2001-12-26 TB31262F Pin No. Pin Name 19 STB Function Internal Equivalent Circuit Strobe input terminal for serial data setting 20 DATA Data input terminal for serial data setting 21 CLK Clock input terminal for serial data setting 19 20 21 1 kΩ GND2 200 Ω 22 22 SIG-OUT Signal output terminal GND2 V CC1 RSSI RSSI linear output terminal 23 15 kΩ 23 GND1 V CC1 24 DATA-OUT 24 Output terminal of Data comparater GND1 25 V CC3 26 MIX-OUT V CC terminal 270 Ω Output terminal from Mixer 5 26 2001-12-26 TB31262F Internal Equivalent Circuit Input terminal for IF-AMP1 27 V CC1 3 kΩ IFAMP1IN Function 0.5 pF 27 Pin Name 0.5 pF 1.7 kΩ 1.7 kΩ Pin No. 200 µA 170 Ω 29 170 Ω GND1 V CC terminal 30 200 µA IFAMP2IN 3 kΩ 170 Ω 29 30 V CC1 0.5 pF V CC1 0.5 pF 3 kΩ 3 kΩ 28 Input terminal for IF-AMP2 170 Ω GND1 29 IF-AMP-REF 31 E-RECT Reference terminal for IF-AMP1 and IF-AMP2 Expander’s external rectifier capacitor terminal V CC1 IFAMP1OUT 270Ω Output terminal from Expander 800 µA 32 33 VREF 34 RX-GND 35 RX-VCOL1 Terminal1 for external inductor of differential RXVCO 36 RX-VCOL2 Terminal2 for external inductor of differential RXVCO 37 RX-V CC GND1 Reference voltage output terminal with external Bi-pass capacitor GND terminal 32 37 V CC terminal 14 RX LOOP 35 34 36 V CC3 VCO 38 RX-LOOP 38 Terminal1 for RX loop filter GND2 6 2001-12-26 TB31262F Pin No. Pin Name Function Internal Equivalent Circuit V CC1 C-RECT Terminal for Compressor’s rectifire capacitor 8.3 kΩ 39 300 Ω 39 GND1 40 LNA -C Corrector terminal of LNA 40 42 LNA -E Emitter terminal of LNA 43 43 LNA -B Base terminal of LNA 41 GND1 GND terminal 44 V CC2 V CC terminal 42 10 µA V CC1 45 DATA-IN 50kΩ Input terminal of data comparator 45 GND1 V CC1 V REF PRE-IN Input terminal of Pre Amp 46 300 Ω 10 µA 46 GND1 7 200 µA V CC1 EXP 300 Ω GND1 2001-12-26 TB31262F Pin No. Pin Name Function Internal Equivalent Circuit 47 AF-OUT 80 µA V CC2 Audio frequency output terminal of Quadrature detection 47 330 Ω GND1 100 Ω 300 µA Terminal for external Quad-Coil for detection V CC2 40 µA QUAD 3pF 48 4 kΩ 500 Ω 48 4 kΩ GND1 GND1 GND1 V CC1 49 EXP-OUT Output terminal of Expander ATT 49 300 Ω 20 pF GND1 V CC1 50 REC-IN Input terminal of Receiver Amp 20 kΩ 10 µA 5pF REC-OUT1 20 kΩ Differential output terminal1 of Receiver Amp REC-OUT2 51 GND1 10 µA 10 kΩ V REF 52 GND1 V CC1 10 kΩ 51 52 V CC1 300 Ω 50 Differential output terminal2 of Receiver Amp GND1 8 2001-12-26 TB31262F 1. General Description TB31262F is controlled all status by serial data. This IC is included IF detector, PLL, and compander. IF detector function is for wide-band system, dual PLL function, and compander with MIC amp and receiver amp. +・POWER SUPPLY BLOCK ASSIGN V CC1 LNA, MIX, IF-AMP1, DATA-COMP, MIC-AMP, COMPRESSOR, RECEIVER-AMP PRE-AMP, EXPANDER, SPLATTER-AMP GND1 V CC2 IF-AMP2, QUAD V CC3 GND2 RX-PLL, TX-PLL, REF-INPUT, DATA LATCH CONTROL RX-V CC RX-GND RX-VCO + DOUBLER+BUFFER TX-V CC TX-GND TX-VCO + DOUBLER+BUFFER PA-V CC PA-GND POWER-AMP VCC1 VCC2 LNA MIX RX-VCC RX-VCO +DOUBLER +BUFFER IF1 VCC3 EXP RX-PLL LOGIC RX-GND COMP TX-VCC TX-PLL PA-VCC PA IF2 TX-VCO +DOUBLER +BUFFER GND1 GND2 PA-GND TX-GND 9 2001-12-26 TB31262F Gv distribution for receiving ISM900 (902-928 MHz) ∼ LNA DUP MIX CF1 IF AMP1 CF2 IF AMP2 QUAD -4dB 20dB 7dB -4dB 24dB -4dB 72dB Total 109dB 0dB 2. PLL block CP 1/16,1/17 (4 bit counter) FIN 11 bit counter 3. Data Latch Control This block has 4 registers assigned by 2 or 3 bits CODE. DATA is read on the time of up edge of CLK. When STB receivers high signal, DATA in shift register is sent into LATCH to control block which CODE indicates and the operation starts. INPUT TIMING FOR SERIAL DATA When both CLK “H” and DATA “L”, STB “H” leads data active. > 1 µs CLK > = 0.2 µs > = 0.2 µs > = 0.2 µs DATA > = 0.1 µs > = 0.1 µs > = 0.2 µs STB > = 0.2 µs Operation State Previous State Code New State Control Block Function * 1 0 TX divider (18 bits) Setting frequency for TX-PLL * 0 1 RX divider (18 bits) Setting frequency for RX-PLL * 1 1 REF divider (12 bits) Setting phase comparison frequency 0 0 0 Option control 1 Battery save, Mute control, etc 1 0 0 Option control 2 Volume control 10 2001-12-26 TB31262F 4. Serial data format (1) TX DIVIDER (Set VCO Doubler Output Frequency (EX 900 MHz, Not 450 MHz)) Swallow counter (4 bit) A0 A1 A2 A3 Programmable counter (11 bit) M0 M1 M2 M3 M4 M5 M6 M7 Code M8 M9 M10 1 * 0 ← 1st *don’t care N = 2 × (16M + A) (480 − 65534) A = A0 + 2A1 + 4A2 + 8A3 M = M0 + 2M1 + 4M2 + 8M3 + 16M4 + 32M5 + 64M6 + 128M7 + 256M8 + 512M9 + 1024M10 (2) RX DIVIDER (Set VCO Doubler Output Frequency (EX 900 MHz,Not 450 MHz)) Swallow counter (4 bit) A0 STB A1 A2 A3 Programmable counter (11 bit) M0 M1 M2 M3 M4 M5 M6 M7 Code M8 M9 M10 0 * 1 ← 1st *don’t care N = 2 × (16M + A) (480 − 65534) A = A0 + 2A1 + 4A2 + 8A3 M = M0 + 2M1 + 4M2 + 8M3 + 16M4 + 32M5 + 64M6 + 128M7 + 256M8 + 512M9 + 1024M10 (3) REF DIVIDER Programmable counter (10bit) R0 STB R1 R2 R3 R4 R5 Code R6 R7 R8 R9 1 1 ← 1st STB N = R(4 − 1023) R = R0 + 2R1 + 4R2 + 8R3 + 16R4 + 32R5 + 64R6 + 128R7 + 256R8 + 512R9 (4) Option control 1 SIG OUT TXLD RXLD RSSI BALM TX control RF AF CP RX control MUT RF AF CP BAT-ALM (Setting) MUTE BA1 BA2 BA3 Code 0 0 0 ← 1st STB 11 2001-12-26 TB31262F 1） Battery saving (BS) control 0 Operation 1 Battery Saving (BS) Bit RX-RF Control Block RX-PLL,RX-Buffer Tr, IF AMP,QUAD,DATA COMP,RSSI, LNA, MIX, RX − VCO + DOUBLER → ICC 2 RX-AF PRE AMP,EXPANDER,RECEIVER AMP→ ICC 3 TX-RF TX-PLL,TX-Buffer Tr , PA ,TX-VCO + DOUBLER → ICC 4 TX-AF MIC AMP, COMPRESSOR, SPLATTER-FILTER → ICC 5 REF INPUT = OFF at TX-RF = 1 and RX-RF = 1 2） Charge Pump Output Current Select CP Current 0 400 µA 1 800 µA 3） MUTE control 0 Operation 1 MUTE ON TX-MUTE control for COMPRESSOR output. RX-MUTE control for EXPANDER output. 4） Battery Alarm Detection Setting This IC has 5 threshold levels for detection of battery dropping. These threshold levels are given by below table. BA1 BA2 BA3 DET. Voltage 1 0 1 2.15 V 0 0 0 2.25 V 0 0 1 3.00 V 0 1 0 3.15 V 0 1 1 3.30 V 1 0 0 2.85 V 1 1 0 2.75 V 1 1 1 BS 12 2001-12-26 TB31262F 5） SIG OUT selection SIG OUT terminal generates combination states of RX and TX LOCK DETECTOR and RSSI. 0 OFF 1 OUT PUT BIT FUNCTION TXLD TX-PLL LOCK DETECTOR RXLD RX-PLL LOCK DETECTOR RSSI RSSI COMPARATOR OUTPUT BALM BATTERY ALARM (5) Option control 2 RECEIVER OUTPUT LEVEL CONTROL It is possible to volume control to set these bits. And this resister includes TEST bits which must be set 0 in customer side. 1.5dB steps from 0dB to −22.5dB. Receiver Volume VOL1 VOL2 VOL3 VOL4 TEST Code 1 0 0 VOL1 VOL2 VOL3 VOL4 GAIN 0 0 0 0 0dB 0 0 0 1 −1.5dB 0 0 1 0 −3.0dB 0 0 1 1 −4.5dB 0 1 0 0 −6.0dB 0 1 0 1 −7.5dB 0 1 1 0 −9.0dB 0 1 1 1 −10.5dB 1 0 0 0 −12.0dB 1 0 0 1 −13.5dB 1 0 1 0 −15.0dB 1 0 1 1 −16.5dB 1 1 0 0 −18.0dB 1 1 0 1 −19.5dB 1 1 1 0 −21.0dB 1 1 1 1 −22.5dB 13 2001-12-26 TB31262F MAXIMUM RATINGS (Ta = 25°C) Characteristic Symbol Rating Unit VCC 6 V PD *1) 900 mW Operating Temperature T opr -20~70 °C Storage Temperature T stg -50~150 °C Power Supply Voltage Power Dissipation *1) IC single unit TENTATIVE ELECTRICAL CHARACTERISTICS (1) System Characteristics − TOTAL (V CC = 3.6 V, Ta = 25°C, ∆f = ±25 kHz, fmod = 1 kHz） Test Characteristic Symbol Test Condition Circuit Operating Power Supply Voltage V CC (opr) Consumption Current 1 ICC1 １ ALL ON， Min Typ. Max Unit 2.0 3.6 5.0 V 56.0 70.0 84.0 mA PA-GAIN CONT = 20 kΩ Consumption Current 2 ICC2 １ RX-RF ON 18.0 26.0 34.0 mA Consumption Current 3 ICC3 １ RX-AF ON 2.0 2.9 3.8 mA Consumption Current 4 ICC4 １ TX-RF ON， 32.0 40.0 48.0 mA PA-GAIN CONT = 20 kΩ Consumption Current 5 ICC5 １ TX-AFON 1.1 1.7 2.3 mA Alarm Supply Current ICC (A) １ RL = 100kΩ、3.3Vmode 80 115 180 µA Supply Current at BS ICC (BS) １ ALL OFF ― 0 5 µA Data Input Threshold1 V IH 0.8 × V CC V CC 4.0 V V IL −0.2 0 0.2 × V CC V I IH １ V IH = V CC 0 1 µA I IL １ V IL = GND 0 1 µA f CK １ 100 4000 KHz Data Input Current CK Input Frequency 14 2001-12-26 TB31262F − DETECTORS (Unless Otherwise Specified, V CC = 3.6 V, Ta = 25°C) DETECTOR-1: BATTERY ALARM Characteristic Detection Voltage0 Symbol VBAT0-L Test Circuit Test Condition Min Typ. Max Unit 2.07 2.15 2.23 V ― 2.22 2.30 V 2.17 2.25 2.33 V １ VBAT0-H Detection Voltage1 Detection Voltage2 VBAT1-L １ VBAT1-H ― 2.32 2.40 V VBAT2-L 2.67 2.75 2.83 V ― 2.83 2.91 V 2.77 2.85 2.93 V ― 2.93 3.01 V 2.92 3.00 3.08 V ― 3.08 3.16 V 3.05 3.15 3.25 V ― 3.25 3.35 V 3.20 3.30 3.40 V ― 3.40 3.50 V Test Condition Min Typ. Max Unit １ VBAT2-H Detection Voltage3 VBAT3-L １ VBAT3-H Detection Voltage4 VBAT4-L １ VBAT4-H Detection Voltage5 VBAT5-L １ VBAT5-H Detection Voltage6 VBAT6-L １ VBAT6-H DETECTOR-2: DATA COMPARATOR Characteristic Symbol Test Circuit Duty Ratio1 Duty1 ２ VIN (Data Comparator Input) = 40mVrms, “H”Level, F = 500 kHz 42 46 50 % Duty Ratio2 Duty2 ２ VIN (Data Comparator Input) = 120mVrms, “H”Level, F = 500 kHz 43 48.5 50 % Output Low Level Voltage V OL2 １ I SINK = 0.2 mA ― 0.1 0.5 V Output Leak Current １ H LEVEL ― 0 5 µA Min Typ. Max Unit I LEAK2 DETECTOR-3: SIG OUT Characteristic Symbol Test Circuit Test Condition Output Low Level Voltage VOL3 １ I SINK = 0.2 mA 0.1 0.5 V Output Leak Current １ H Level 0 5 µA I LEAK3 − PLL (Doubler Type Differential VCO System with Vari-Cap) (Unless Otherwise Specified, V CC = 3.6 V, Ta = 25°C) Test Circuit Test Condition Min Typ. Max Unit PLL Operating Frequency f IN ― 450 ― MHz XIN Operating Frequency fXI １ VIN = 280mVp-p 2 4 10 MHz XIN Input Sensitivity VXIH １ fIN = 4 MHz 200 280 ｍVp-p Charge Pump Output Current ICP1 VCP = 1.8 V ±400 uA ICP2 VCP = 1.8 V ±800 uA Charge Pump Leak Current I LEAK １ 0 5 uA Characteristic Symbol 15 2001-12-26 TB31262F (2) RX CHARACTERISTICS − RF (V CC = 3.6 V, Ta= 25°C, ∆f = ±25 kHz, fmod = 1 kHz) Test Circuit Test Condition Min Typ. Max Unit 12dB SINAD LNA MATCHING INPUT ― 2.5 ― dBu V EMF LNA ＋MIX Gain Ｇｖ ― 27 ― IF AMP1 Gain GIF1 ― 24 ― dB IF AMP2 Gain GIF2 ― 72 ― dB Demodulated Output level V OD ２ VIN (RF (DUP) ) = 50dBµV EMF 88 108 128 mVrms ΔV OD ２ VIN (RF (DUP) ) = 15dBµV EMF −3.0 0 ― dB 40 47.5 ― dB Characteristic 12dB SINAD Sensitivity Demodulated Output level2 Symbol ΔVOD ≧VOD-3dB S/N Ratio SN VIN (RF (DUP) ) = 50dBµV EMF ２ with300∼3kHz filter AMR VIN (RF (DUP) ) = 50dBµV EMF ― 40 ― dB RIF1IN IF1-IN ― 330 ― Ω IFAMP1 Output Resistance RIF1OUT IF1-OUT ― 330 ― Ω IFAMP2 Input Resistance RIFOUT IF2-IN ― 330 ― Ω RSSI Output Voltage VRSSI1 ２ VIN (RF (DUP) ) = 15dBµV EMF 0.33 0.63 0.93 V VIN (RF (DUP) ) = 50dBµV EMF 1.17 1.47 1.77 V ｆ=936.7MHz 0.7 1.0 1.3 V Test Condition Min Typ. Max Unit −10.0 −6.0 dBV AM Rejection Ratio IFAMP1 input Resistance VRSSI2 RX VCO Control voltage Vcont RX ２ − AF PRE AMP + EXPANDER + RECEIVER AMP Characteristic Symbol Test Circuit EXP Output Reference Level VrefE ２ VIP = −20dBV PRE-AMP INPUT RESISTANCE: 150kΩ −14.0 EXP Output Deviation VOE ２ VOP = −45dBV −1.0 0.0 +1.0 dB Total Hormonic Distortion THD R ２ RL = 150 Ω VRI = −15dBV ― 1.15 2.0 % Output Noise Level VNOR ２ Input -GND Short ― −90 −65 dBV Maximum Output Level DR THD = 3%, 150 Ωload ― 2.2 ― Vp-p MUTE Output Level VMUTE ― −70 ― dBV PRE AMP Voltage Gain Setting Range GRNG2 0 20 dB RECEIVER AMP Voltage Gain Setting Range GRNG1 6 20 dB Offset Voltage TOF2 1 RO1･RO2 −50 0 50 mV Crosstalk CE CTCE VIM = −10dBV ― −65 ― dB Attack Time TAE VIP = −18 → −12dBV ― 8.5 ― ms Recovery Time TRE VIP = −12 → −18dBV ― 4.5 ― ms 16 2001-12-26 TB31262F (3) TX CHARACTERISTICS − RF (V CC = 3.6 V, Ta= 25°C, ∆f = ±25 kHz, fmod = 1 kHz) Symbol Test Circuit PA OUTPUT LEVEL PA-OUT PA GAIN CONTROL PA-CONT Characteristic Test Condition Min Typ. Max Unit ２ AFTER MATCHING NETWORK VR = 20 kΩ 0 +3.0 +6.0 dBm ２ VR = 100 kΩ, -9.0 −6.5 -4.0 dB PA-OUT Deviation PA OUTPUT IMPEDANCE PA-ROUT AFTER MATCHING NETWORK ― 50 ― Ω PA OUTPUT CAPACITANCE PA-COUT AFTER MATCHING NETWORK ― 30 ― pF Vcont TX ２ ｆ=904MHz 0.4 0.7 1.0 V TX VCO Deviation Δf TX ２ FILOUT=-30dBV, ｆ=904MHz ±25 ±30 ±35 KHz TX VCO Distortion THD TX ２ FILOUT=-30dBV, ｆ=904MHz ― 1.0 3.0 ％ Min Typ. Max Unit TX VCO Control voltage − AF (Unless Otherwise Specified, V CC = 3.6 V, fin = 1 kHz, Ta = 25°C) MIC AMP + COMPRESSOR Characteristic Symbol Test Circuit Test Condition COMP Output Reference Level VrefC ２ VOM = −10dBV −11.5 −10.0 −8.5 DBV COMP Output Deviation VOC ２ VOM = −30dBV −0.7 0.0 +0.7 DB MIC AMP Voltage Gain Setting range VGR 0 30 DB Total Hormonic Distortion THD C ２ VOM = −10dBV 0.15 1.0 % Output Noise Level V NOC ２ Input-GND Short −61 −48 dBV Limitting Level V lim1 COMP OUT, VIM = 0dBV 1.3 Vp-p MIC OUT, VIM = 0dBV 2.5 Vp-p dBV V lim2 MUTE Output Level V MUTE −80 −90 Crosstalk EC CTEC VIP = −10dBV −50.0 dB Attack Time TAC VIM = −46 → −34dBV 3.5 ― ｍＳ Recovery Time TRC VIM = −34 → −46dBV 5.0 ― ｍＳ FILTER AMP Voltage Gain G5 0 dB Maximum Output Level DR5 THD = 3% 3 Vp-p Input Bias Current I BIAS １ 1.5 2.5 µA Output DC Voltage Vop １ 0.7 1.0 1.3 V 17 2001-12-26 TB31262F TEST CIRCUIT 1(DC) A VCC ICC 1∼5 , (A),(BS) RXVCO RXVCO −L2 −L 1 2.2 µ 1k 0.1 µ 0.1 µ A ILEAK R X-VCC 39 38 37 C-RECT R X-LOOP 4.7µ 2.2 µ 40 LNA-C GND1 41 2.2n 36 35 450MHzOSC 34 33 R X-GND VREF IF-AMP1 OUT 32 2.2 µ 1n 31 E-RECT 1n 1n 0.1µ 30 29 28 27 IF-AMP2 IF-AMP VCC1 IF-AMP1 IN REF IN IF-AMP2 (1 ’st) Phase Compalator Bias 26 Divider LNA Buffer MIX-OUT VCC3 IF-AMP1 Gv = 24dB LNA-E 4 2 LNA-B 0.1 µ 2.2n 0.1 µ 25 100k Double ( × 2) 9 00MHz DATA-COMP 43 23 VCC2 100k SIG-OUT 44 45 A ILEAK3 470kΩ 100p DATA LATCH CONTROL IF-AMP2 Gv = 72dB 22pF 20 DATA 100p 19 STB 100p 1µ LPF:Fc = 15kHz QUAD 48 IF-AMP2 (2 ’nd) QUAD EXP-OUT4 9 20k Doubler ( × 2) Buffer EXP TX-MUTE SOFT VOLUME (ATT) 50 900MHz 450MHz 16 51 TXMUTE 3 4 0.1 µ PA-GND 5 SPL OUT 20k 6 7 SPL COMP OUT IN A I BIAS 20k MIC OUT 20K 8 9 2.2 µ 1k 1 µ IL EAK TX−LOOP 10 20k C-N P 15 2.2 µ 14 A MIC IN 11 2.2n 12 13 2.2nTX−GND 0.1 µ 20k 0.022 µ V OP VR1 Phase Differential TX OSC Balanced Connectable Compalator to MIX COMP PA- OUT1 PA-OUT2 Divider MIC-AMP RECEIVER 1 2 PA-GAIN-CONT FREQ SPL-AMP ｆ XI VX IH 1 7 GND2 MOD 52 RECEIVER 2 PA -VCC 1 REF-IN 18 330k TOF2 V VBAT1∼6 V VOL3 CLK Differential TX OSC PRE-AMP 4 7 AF-OUT 22 21 DATA-IN 470k 46 PRE-IN Det Coil V VOL2 RSSI Double Balanced MIX 0.1 µ DATA-OUT 24 A ILEAK2 TXVCO TXVCO −L 1 −L2 0.1µ V 18 2001-12-26 TB31262F TEST CIRCUIT2(AC) 10n R XVCO RXVCO 2.2µ −L1 R X-VCC − L 2 1k G 10.7MHz VCC1 0.1µ CF 2.2 µ IF-A M P A IF-AMP1 2.2n 2.2n 100n 2.2µ IF-AMP2 REF 4.7 µ 0.1 µ Vcont RX OUT C -RECT 3 9 IN 3 0 38 37 36 35 34 33 32 31 29 28 E -RECT 4.7n R X-GND VREF R X-LOOP 450MHzOSC IF-AMP2 40 (1 ’st) LNA-C Phase Bias Compalator IF-AMP1 GND1 4 1 Gv = 24dB Divider LNA 0.1µ Buffer LNA-E 10.7MHz CF IF-AMP1 IN 27 4.7µ 42 26 MIX -OUT VCC3 25 Double ( × 2) 900MHz DATA-COMP 24 V DATA-OUT Duty1,2 RSSI R11 V VRSSI 1,2 R9 LNA-B 43 RSSI 2 3 3p Double Balanced MIX 1 00 n 10 µ VCC2 45 0.1 µ PRE-IN 300~3k VOD ΔVOD SN 22 BPF Det Coil CLK Differential TX OSC PRE-A M P 470kΩ 100p DATA LATCH CONTROL IF-AMP2 Gv = 72dB 46 4 7 AF-OUT 22pF 20 DATA 100p 19 STB 100p 1µ LPF:Fc = 15kHz QUAD 100n 10 µ 8.2k V VrefE VOE VNOR 48 IF-AMP2 (2’ nd) QUAD E X P-OUT 49 1 µ TX-MUTE SOFT VOLUME (ATT) 220k 50 330k 900MHz FREQ SPL-A M P TXMUTE 2 3 4 PA-GND 10 µ 5 6 SPL OUT 20k Phase Differential TX OSC Balanced Connectable Compalator to MIX SPL IN MIC OUT 7 COMP OUT 5p 9 10 20k 15 C-N P 2.2 µ 2.2 µ 1k 11 2.2n 12 13 2.2nTX− GND 0.1 µ 100p 20k 2.2n PA-GAIN-CONT 16 T 20K/100k VR1 14 V 1µ Vcont TX TX−LOOP MIC IN 8 3.3n 3p Divider MIC-A M P COMP PA -OUT1 PA -OUT2 V 1 7 GND2 450MHz MOD RECEIVER 1 150 52 RECEIVER 2 PA-VCC 1 100n Dou bler ( × 2) Buffer EXP 220pF V REF-IN 18 51 THD R SIG-OUT R7 100k 21 DATA-IN 150k 0.1 µ V 44 20k VrefC V VOC THD C VNOC 3.3n V PA -OUT PA -CONT Δ fTX THD TX 19 TXVCO TXVCO −L 1 −L2 0.1µ 2001-12-26 TB31262F VCC-ICC CHARACTERISTICS 90.000 ICC(BS) ICC1 ICC4 ICC5 ICC2 ICC3 ICC(A) 80.000 70.000 50.000 40.000 ICC4 30.000 ICC2 ICC3 ICC5 ICC2 ICC(BS) 20.000 10.000 0.000 0 1 2 3 Vcc(V) 4 5 6 S/N AMR SINAD VOD,VRSSI (Condition:Dup-IN,Vcc=3.6v) 50 2.5 40 SINAD 30 VRSSI 20 2 10 1.5 -10 VOD -20 -30 VRSSI(V) 0 ｄ B Icc(V) 60.000 ICC1 1 AMR -40 S/N -50 0.5 -60 NOISE -70 -80 -130 0 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 vin -20 -10 ( S(0dB) S/N SINAD AMR NOISE(dBV) VOD(dBV) VRSSI(V) RSSI-COMP 20 2001-12-26 TB31262F COMPANDER CHARACTERISTICS (Vcc=3.6V) COMP EXP COMP-THD EXP-THD 10 -10 0.8 -20 0.6 -30 -40 0.4 -50 THD(%) Output level(dBV) 0 1 -60 0.2 -70 -80 -90 -70 -60 -50 -40 -30 -20 -10 0 10 0 Input level(dBV) PRE-IN MIC-IN EXPANDER frequency CHARACTERITICS ( Vcc=3.6V Vprein=-35dBV soft-vol=0dB) -15 EXP-OUT [dBV] -25 -35 -45 -55 -65 -75 100 1000 10000 100000 freq [Hz] 21 2001-12-26 TB31262F VCC-VREF CHARACTERISTICS 1.6 1.4 1.2 Vout（V) 1 0.8 0.6 VREF 0.4 0.2 0 0 1 2 3 Vcc(V) 4 5 6 VCC-SPLOUT(DC Bias) CHARACTERISTICS 1.2 1 Vout（V) 0.8 0.6 SPLOUT 0.4 0.2 0 0 1 2 3 Vcc(V) 22 4 5 6 2001-12-26 TB31262F RXVCO f-V CHARACTERITICS(Vcc=3.6V) 500.0 490.0 OSC FREQUENCY ［ＭＨｚ］ 480.0 470.0 460.0 450.0 440.0 430.0 420.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 VRXCP [V] ＴＸＶＣＯ f-V CHARACTERITICS(Ｖｃｃ＝３．６Ｖ) 490 480 発振周波数 ［ＭＨｚ］ 470 460 450 440 430 420 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 ＶＴＸＣＰ ［Ｖ］ 23 3.0 3.2 3.4 3.6 2001-12-26 TB31262F Deviation CHARACTERITICS 40 38 SPL-OUT Level -30dBV Deviation ［ｋＨｚ］ 36 34 32 30 28 26 24 22 20 2.00 2.50 3.00 3.50 4.00 Vcc ［Ｖ］ 24 4.50 5.00 5.50 6.00 2001-12-26 TB31262F Outline Drawing 25 2001-12-26 TB31262F RESTRICTIONS ON PRODUCT USE 000707EBA_S • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The products described in this document are subject to the foreign exchange and foreign trade laws. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 26 2001-12-26