PHILIPS BF1208 Dual n-channel dual gate mosfet Datasheet

BF1208
Dual N-channel dual gate MOSFET
Rev. 01 — 16 March 2005
Product data sheet
1. Product profile
1.1 General description
The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
bias of amplifier B.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor has a SOT666 micro-miniature plastic package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
■ Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with a partly integrated bias
■ Internal switch to save external components
■ Superior cross-modulation performance during AGC
■ High forward transfer admittance
■ High forward transfer admittance to input capacitance ratio
1.3 Applications
■ Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
◆ digital and analog television tuners
◆ professional communication equipment
BF1208
Philips Semiconductors
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1:
Quick reference data
Per MOSFET unless otherwise specified.
Symbol Parameter
Conditions
VDS
drain-source voltage (DC)
ID
drain current (DC)
Ptot
total power dissipation
Tsp ≤ 109 °C
|yfs|
forward transfer admittance
f = 1 MHz
Ciss(G1)
input capacitance at gate1
Min
Typ
Max Unit
-
-
6
V
-
-
30
mA
-
-
180
mW
amplifier A; ID = 19 mA
26
31
41
mS
amplifier B; ID = 13 mA
28
33
43
mS
amplifier A
-
2.2
2.7
pF
amplifier B
-
2.0
2.5
pF
[1]
f = 1 MHz
Crss
reverse transfer capacitance f = 1 MHz
-
20
-
fF
NF
noise figure
amplifier A; f = 400 MHz
-
1.3
1.9
dB
amplifier B; f = 800 MHz
-
1.4
2.1
dB
amplifier A
100
105
-
dBµV
amplifier B
100
103
-
dBµV
-
-
150
°C
Xmod
input level for k = 1 % at
40 dB AGC
junction temperature
Tj
[1]
cross-modulation
Tsp is the temperature at the soldering point of the source lead.
2. Pinning information
Table 2:
Discrete pinning
Pin
Description
1
gate1 (AMP A)
2
gate2
3
gate1 (AMP B)
4
drain (AMP B)
5
source
6
Simplified outline
6
5
Symbol
4
AMP A
G1A
DA
G2
drain (AMP A)
1
2
S
3
G1B
DB
AMP B
sym089
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Product data sheet
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Rev. 01 — 16 March 2005
2 of 22
BF1208
Philips Semiconductors
Dual N-channel dual gate MOSFET
3. Ordering information
Table 3:
Ordering information
Type number
BF1208
Package
Name
Description
Version
-
plastic surface mounted package; 6 leads
SOT666
4. Marking
Table 4:
Marking codes
Type number
Marking code
BF1208
2L
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per MOSFET
VDS
drain-source voltage (DC)
-
6
V
ID
drain current (DC)
-
30
mA
IG1
gate1 current
-
±10
mA
IG2
gate2 current
Ptot
total power dissipation
Tstg
Tj
[1]
-
±10
mA
-
180
mW
storage temperature
−65
+150
°C
junction temperature
-
150
°C
Tsp ≤ 109 °C
[1]
Tsp is the temperature at the soldering point of the source lead.
001aac193
250
Ptot
(mW)
200
150
100
50
0
0
50
100
150
200
Tsp (˚C)
Fig 1. Power derating curve
9397 750 14254
Product data sheet
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Rev. 01 — 16 March 2005
3 of 22
BF1208
Philips Semiconductors
Dual N-channel dual gate MOSFET
6. Thermal characteristics
Table 6:
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-sp)
thermal resistance from junction to solder point
Typ
Unit
225
K/W
7. Static characteristics
Table 7:
Static characteristics
Tj = 25 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
amplifier A
6
-
-
V
amplifier B
6
-
-
V
Per MOSFET; unless otherwise specified
V(BR)DSS
drain-source breakdown voltage
VG1-S = VG2-S = 0 V; ID = 10 µA
V(BR)G1-SS
gate1-source breakdown voltage
VG2-S = VDS = 0 V; IG1-S = 10 mA
6
-
10
V
V(BR)G2-SS
gate2-source breakdown voltage
VG1-S = VDS = 0 V; IG2-S = 10 mA
6
-
10
V
VF(S-G1)
forward source-gate1 voltage
VG2-S = VDS = 0 V; IS-G1 = 10 mA
0.5
-
1.5
V
VF(S-G2)
forward source-gate2 voltage
VG1-S = VDS = 0 V; IS-G2 = 10 mA
0.5
-
1.5
V
VG1-S(th)
gate1-source threshold voltage
VDS = 5 V; VG2-S = 4 V; ID = 100 µA
0.3
-
1.0
V
VG2-S(th)
gate2-source threshold voltage
VDS = 5 V; VG1-S = 5 V; ID = 100 µA
0.4
-
1.0
V
IDSX
drain-source current
VG2-S = 4 V; VDS(B) = 5 V; RG1 = 150 kΩ
IG1-S
IG2-S
gate1 cut-off current
gate2 cut-off current
amplifier A; VDS(A) = 5 V
[1]
14
-
24
mA
amplifier B; VDS(B) = 5 V
[2]
9
-
17
mA
amplifier A; VG1-S(A) = 5 V; ID(B) = 0 A
-
-
50
nA
amplifier B; VG1-S(B) = 5 V; VDS(B) = 0 V
-
-
50
nA
-
-
20
nA
VG2-S = VDS(A) = 0 V
VG2-S = 4 V; VG1-S(B) = 0 V;
VG1-S(A) = VDS(A) = VDS(B) = 0 V
[1]
RG1 connects gate1 (B) to VGG = 0 V (see Figure 3).
[2]
RG1 connects gate1 (B) to VGG = 5 V (see Figure 3).
9397 750 14254
Product data sheet
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Rev. 01 — 16 March 2005
4 of 22
BF1208
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aaa552
20
ID
(mA)
16
G1A
(1)
DA
(2)
12
G2
S
(3)
G1B
8
DB
RG1
(4)
VGG
4
(6)
001aac205
(5)
0
0
1
2
3
4
5
VGG (V)
(1) ID(B); RG1 = 120 kΩ.
VGG = 5 V: amplifier A is off; amplifier B is on.
(2) ID(B); RG1 = 150 kΩ.
VGG = 0 V: amplifier A is on; amplifier B is off.
(3) ID(B); RG1 = 180 kΩ.
(4) ID(A); RG1 = 180 kΩ.
(5) ID(A); RG1 = 150 kΩ.
(6) ID(A); RG1 = 120 kΩ.
Fig 2. Drain currents of MOSFET A and B as a
function of gate1 supply voltage
Fig 3. Functional diagram
8. Dynamic characteristics
8.1 Dynamic characteristics for amplifier A
Table 8:
Dynamic characteristics for amplifier A [1]
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 19 mA; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
|yfs|
forward transfer admittance
Tj = 25 °C
26
31
41
mS
Ciss(G1)
input capacitance at gate1
f = 1 MHz
-
2.2
2.7
pF
Ciss(G2)
input capacitance at gate2
f = 1 MHz
-
3.0
-
pF
Coss
output capacitance
f = 1 MHz
-
0.9
-
pF
Crss
reverse transfer capacitance
f = 1 MHz
-
20
-
fF
Gtr
power gain
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
32
36
40
dB
f = 400 MHz; GS = 2 mS; GL = 1 mS
28
32
36
dB
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
23
27
32
dB
NF
noise figure
f = 11 MHz; GS = 20 mS; BS = 0 S
-
3.0
-
dB
f = 400 MHz; YS = YS(opt)
-
1.3
1.9
dB
f = 800 MHz; YS = YS(opt)
-
1.4
2.1
dB
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Product data sheet
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Rev. 01 — 16 March 2005
5 of 22
BF1208
Philips Semiconductors
Dual N-channel dual gate MOSFET
Table 8:
Dynamic characteristics for amplifier A [1] …continued
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 19 mA; unless otherwise specified.
Symbol
Parameter
Xmod
Conditions
cross-modulation
Min
Typ
Max
Unit
at 0 dB AGC
90
-
-
dBµV
at 10 dB AGC
-
90
-
dBµV
at 20 dB AGC
-
99
-
dBµV
at 40 dB AGC
100
105
-
dBµV
[2]
input level for k = 1 %; fw = 50 MHz;
funw = 60 MHz
[1]
For the MOSFET not in use: VG1-S(B) = 0 V; VDS(B) = 0 V.
[2]
Measured in Figure 33 test circuit.
8.1.1 Graphics for amplifier A
001aaa554
30
001aaa555
32
(1)
ID
(mA)
(2)
ID
(mA)
(3)
(1)
(2)
(4)
24
(3)
20
(4)
(5)
16
(5)
(6)
10
(7)
(6)
8
(8)
(9)
(7)
0
0
0
0.4
0.8
1.2
1.6
2
VG1-S (V)
0
4
6
VDS (V)
(1) VG2-S = 4 V.
(1) VG1-S(A) = 1.8 V.
(2) VG2-S = 3.5 V.
(2) VG1-S(A) = 1.7 V.
(3) VG2-S = 3 V.
(3) VG1-S(A) = 1.6 V.
(4) VG2-S = 2.5 V.
(4) VG1-S(A) = 1.5 V.
(5) VG2-S = 2 V.
(5) VG1-S(A) = 1.4 V.
(6) VG2-S = 1.5 V.
(6) VG1-S(A) = 1.3 V.
(7) VG2-S = 1 V.
(7) VG1-S(A) = 1.2 V.
VDS(A) = 5 V; VG1-S(B) = VDS(B) = 0 V; Tj = 25 °C.
2
(8) VG1-S(A) = 1.1 V.
(9) VG1-S(A) = 1 V.
VG2-S = 4 V; VG1-S(B) = VDS(B) = 0 V; Tj = 25 °C.
Fig 4. Amplifier A: transfer characteristics; typical
values
Fig 5. Amplifier A: output characteristics; typical
values
9397 750 14254
Product data sheet
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Rev. 01 — 16 March 2005
6 of 22
BF1208
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aaa556
40
yfs
(mS)
ID(A)
(mA)
16
(1)
(2)
30
001aac206
20
12
20
(3)
8
(4)
10
4
(5)
(6)
0
0
0
8
16
24
32
0
(1) VG2-S = 4 V.
20
40
60
ID(B) (µA)
ID (mA)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = 5 V;
VG1-S(B) = 0 V; Tj = 25 °C.
(2) VG2-S = 3.5 V.
ID(B) = internal G1 current = current in pin drain (B) if
MOSFET (B) is switched off.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
VDS(A) = 5 V; VG1-S(B) = VDS(B) = 0 V; Tj = 25 °C.
Fig 6. Amplifier A: forward transfer admittance as a
function of drain current; typical values
Fig 7. Amplifier A: drain current as a function of
internal G1 current; typical values
9397 750 14254
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 16 March 2005
7 of 22
BF1208
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aaa558
20
ID
(mA)
16
001aaa559
32
ID
(mA)
24
(1)
12
(2)
(3)
16
(4)
(5)
8
(6)
8
4
0
0
0
1
2
3
4
5
Vsupply (V)
VDS(A) = VDS(B) = Vsupply; VG2-S = 4 V; Tj = 25 °C;
RG1 = 150 kΩ (connected to ground); see Figure 3.
0
2
4
6
VG2-S (V)
(1) VDS(B) = 5 V.
(2) VDS(B) = 4.5 V.
(3) VDS(B) = 4 V.
(4) VDS(B) = 3.5 V.
(5) VDS(B) = 3 V.
(6) VDS(B) = 2.5 V.
VDS(A) = 5 V; VG1-S(B) = 0 V; gate1 (A) = open;
Tj = 25 °C.
Fig 8. Amplifier A: drain current of amplifier A as a
function of supply voltage of A and B amplifier;
typical values
001aac195
120
Vunw
(dBµV)
Fig 9. Amplifier A: drain current as a function of gate2
voltage; typical values
001aac196
0
gain
reduction
(dB)
10
110
20
100
30
90
40
80
50
0
10
20
30
40
50
gain reduction (dB)
VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; fw = 50 MHz;
funw = 60 MHz; Tamb = 25 °C; see Figure 33.
Fig 10. Amplifier A: unwanted voltage for 1 %
cross-modulation as a function of gain
reduction; typical values
0
2
3
4
VAGC (V)
VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; f = 50 MHz;
see Figure 33.
Fig 11. Amplifier A: gain reduction as a function of
AGC voltage; typical values
9397 750 14254
Product data sheet
1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 16 March 2005
8 of 22
BF1208
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aac197
28
001aac566
102
bis, gis
(mS)
ID
(mA)
10
20
bis
1
12
gis
10−1
10−2
4
0
10
20
30
40
50
gain reduction (dB)
10
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 19 mA
Fig 12. Amplifier A: drain current as a function of gain
reduction; typical values
001aac567
−102
|yfs|
|yfs|
(mS)
103
f (MHz)
VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; f = 50 MHz;
Tamb = 25 °C; see Figure 33.
102
102
ϕfs
(deg)
Fig 13. Amplifier A: input admittance as a function of
frequency; typical values
001aac568
103
−103
ϕrs
(deg)
|yrs|
(µS)
ϕrs
102
−102
−10
10
ϕfs
|yrs|
−10
10
1
10
−1
103
102
1
10
f (MHz)
102
103
−1
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 19 mA
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 19 mA
Fig 14. Amplifier A: forward transfer admittance and
phase as a function of frequency; typical values
Fig 15. Amplifier A: reverse transfer admittance and
phase as a function of frequency; typical values
9397 750 14254
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 16 March 2005
9 of 22
BF1208
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aac569
10
bos, gos
(mS)
bos
1
gos
10−1
10−2
102
10
103
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 19 mA
Fig 16. Amplifier A: output admittance as a function of frequency; typical values
8.1.2 Scattering parameters for amplifier A
Table 9:
Scattering parameters for amplifier A
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values.
f
(MHz)
s11
Magnitude
(ratio)
Angle
(deg)
s21
Magnitude
(ratio)
Angle
(deg)
s12
50
0.991
−3.86
3.08
100
0.990
−7.73
200
0.986
300
0.980
400
s22
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
175.91 0.0009
77.41
0.992
−1.41
3.03
171.76 0.0019
78.10
0.991
−2.81
−15.43 2.99
163.68 0.0037
78.39
0.990
−5.57
−22.98 2.94
155.54 0.0054
73.53
0.989
−8.34
0.970
−30.44 2.89
147.55 0.0070
68.74
0.986
−11.08
500
0.960
−37.60 2.82
139.76 0.0085
63.64
0.983
−13.78
600
0.948
−44.62 2.75
132.16 0.0098
59.62
0.980
−16.45
700
0.935
−51.44 2.67
124.70 0.0110
55.09
0.977
−19.10
800
0.921
−58.04 2.58
117.39 0.0120
50.79
0.973
−21.69
900
0.908
−64.41 2.50
110.20 0.0128
46.62
0.970
−24.28
1000
0.894
−70.49 2.40
103.31 0.0135
42.78
0.967
−26.87
8.1.3 Noise data for amplifier A
Table 10: Noise data for amplifier A
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values;
unless otherwise specified.
f (MHz)
NFmin (dB)
Γopt
ratio
(deg)
400
1.3
0.718
16.06
0.683
800
1.4
0.677
37.59
0.681
9397 750 14254
Product data sheet
rn (Ω)
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 16 March 2005
10 of 22
BF1208
Philips Semiconductors
Dual N-channel dual gate MOSFET
8.2 Dynamic characteristics for amplifier B
Table 11: Dynamic characteristics for amplifier B [1]
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 13 mA; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
|yfs|
forward transfer admittance
Tj = 25 °C
28
33
43
mS
Ciss(G1)
input capacitance at gate1
f = 1 MHz
-
2.0
2.5
pF
Ciss(G2)
input capacitance at gate2
f = 1 MHz
-
3.4
-
pF
Coss
output capacitance
f = 1 MHz
-
0.85
-
pF
Crss
reverse transfer capacitance
f = 1 MHz
-
20
-
fF
Gtr
power gain
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
33
37
41
dB
f = 400 MHz; GS = 2 mS; GL = 1 mS
30
34
38
dB
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
29
33
37
dB
f = 11 MHz; GS = 20 mS; BS = 0 S
-
5
-
dB
f = 400 MHz; YS = YS(opt)
-
1.3
1.9
dB
-
1.4
2.1
dB
at 0 dB AGC
90
-
-
dBµV
at 10 dB AGC
-
88
-
dBµV
at 20 dB AGC
-
94
-
dBµV
at 40 dB AGC
100
103
-
dBµV
NF
noise figure
f = 800 MHz; YS = YS(opt)
Xmod
cross-modulation
input level for k = 1 %; fw = 50 MHz; funw = 60 MHz
[1]
For the MOSFET not in use: VG1-S(A) = 0 V; VDS(A) = 0 V.
[2]
Measured in Figure 34 test circuit.
9397 750 14254
Product data sheet
[2]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 16 March 2005
11 of 22
BF1208
Philips Semiconductors
Dual N-channel dual gate MOSFET
8.2.1 Graphics for amplifier B
001aaa568
(1)
(4)
30
ID
(mA)
(2)
ID
(mA)
001aaa569
32
(1)
(3)
24
(2)
(5)
20
(3)
(4)
16
(5)
(6)
10
(6)
8
(7)
(7)
0
0
0
0.4
0.8
1.2
1.6
2
VG1-S (V)
0
(1) VG1-S(B) = 1.6 V.
(2) VG2-S = 3.5 V.
(2) VG1-S(B) = 1.5 V.
(3) VG2-S = 3 V.
(3) VG1-S(B) = 1.4 V.
(4) VG2-S = 2.5 V.
(4) VG1-S(B) = 1.3 V.
(5) VG2-S = 2 V.
(5) VG1-S(B) = 1.2 V.
(6) VG2-S = 1.5 V.
(6) VG1-S(B) = 1.1 V.
(7) VG2-S = 1 V.
(7) VG1-S(B) = 1 V.
Fig 17. Amplifier B: transfer characteristics; typical
values
6
VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C.
Fig 18. Amplifier B: output characteristics; typical
values
9397 750 14254
Product data sheet
4
VDS (V)
(1) VG2-S = 4 V.
VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C.
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 16 March 2005
12 of 22
BF1208
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aaa570
100
(1)
IG1
(µA)
80
(2)
001aaa571
(1)
(2)
40
yfs
(mS)
(3)
(3)
30
(4)
(4)
60
20
40
(5)
(5)
10
20
(6)
(6)
(7)
(7)
0
0
0
0.4
0.8
1.2
0
1.6
2
VG1-S (V)
8
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
(7) VG2-S = 1 V.
VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C.
001aaa572
24
24
32
ID (mA)
(1) VG2-S = 4 V.
Fig 19. Amplifier B: gate1 current as a function of
gate1 voltage; typical values
16
VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C.
Fig 20. Amplifier B: forward transfer admittance as a
function of drain current; typical values
001aaa573
16
ID
(mA)
ID
(mA)
12
16
8
8
4
0
0
10
20
30
40
50
IG1 (µA)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
Tj = 25 °C.
Fig 21. Amplifier B: drain current as a function of gate1
current; typical values
0
0
2
3
4
5
VGG (V)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
Tj = 25 °C; RG1 = 150 kΩ (connected to VGG); see
Figure 3.
Fig 22. Amplifier B: drain current as a function of gate1
supply voltage; typical values
9397 750 14254
Product data sheet
1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 16 March 2005
13 of 22
BF1208
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aaa574
24
001aaa575
16
(1)
ID
(mA)
(1)
ID
(mA)
(2)
(3)
(2)
12
(4)
(3)
16
(5)
(4)
(5)
8
(6)
(7)
(8)
8
4
0
0
0
2
4
VGG = VDS (V)
6
0
2
4
6
VG2-S (V)
(1) RG1 = 68 kΩ.
(1) VGG = 5.0 V.
(2) RG1 = 82 kΩ.
(2) VGG = 4.5 V.
(3) RG1 = 100 kΩ.
(3) VGG = 4.0 V.
(4) RG1 = 120 kΩ.
(4) VGG = 3.5 V.
(5) RG1 = 150 kΩ.
(5) VGG = 3.0 V.
VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C;
RG1 = 150 kΩ (connected to VGG); see Figure 3.
(6) RG1 = 180 kΩ.
(7) RG1 = 220 kΩ.
(8) RG1 = 270 kΩ.
VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C;
RG1 is connected to VGG; see Figure 3.
Fig 23. Amplifier B: drain current as a function of gate1
supply voltage and drain supply voltage; typical
values
Fig 24. Amplifier B: drain current as a function of gate2
voltage; typical values
9397 750 14254
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 16 March 2005
14 of 22
BF1208
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aaa576
30
Vunw
(dBµV)
(1)
IG1
(µA)
(2)
20
001aac198
120
110
(3)
(4)
100
(5)
10
90
0
80
0
2
4
6
0
20
40
60
gain reduction (dB)
VG2-S (V)
(1) VGG = 5.0 V.
VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V;
RG1 = 150 kΩ (connected to VGG); fw = 50 MHz;
funw = 60 MHz; Tamb = 25 °C; see Figure 34.
(2) VGG = 4.5 V.
(3) VGG = 4.0 V.
(4) VGG = 3.5 V.
(5) VGG = 3.0 V.
VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C;
RG1 = 150 kΩ (connected to VGG); see Figure 3.
Fig 25. Amplifier B: gate1 current as a function of
gate2 voltage; typical values
001aac199
0
gain
reduction
(dB)
10
Fig 26. Amplifier B: unwanted voltage for 1 %
cross-modulation as a function of gain
reduction; typical values
001aac200
16
ID
(mA)
12
20
8
30
4
40
0
50
0
1
2
3
4
0
VAGC (V)
VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V;
RG1 = 150 kΩ (connected to VGG); f = 50 MHz;
Tamb = 25 °C; see Figure 34.
Fig 27. Amplifier B: gain reduction as a function of
AGC voltage; typical values
20
30
40
50
gain reduction (dB)
VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V;
RG1 = 150 kΩ (connected to VGG); f = 50 MHz;
Tamb = 25 °C; see Figure 34.
Fig 28. Amplifier B: drain current as a function of gain
reduction; typical values
9397 750 14254
Product data sheet
10
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 16 March 2005
15 of 22
BF1208
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aac570
102
001aac571
102
bis, gis
(mS)
|yfs|
|yfs|
(mS)
10
−102
ϕfs
(deg)
bis
1
−10
10
ϕfs
gis
10−1
10−2
10
102
1
103
10
−1
103
102
f (MHz)
f (MHz)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 13 mA
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 13 mA
Fig 29. Amplifier B: input admittance as a function of
frequency; typical values
001aac572
103
−103
ϕrs
(deg)
|yrs|
(µS)
ϕrs
102
−102
Fig 30. Amplifier B: forward transfer admittance and
phase as a function of frequency; typical values
001aac573
10
bos, gos
(mS)
bos
1
|yrs|
gos
10
1
10
102
103
−10
10−1
−1
10−2
10
102
103
f (MHz)
f (MHz)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 13 mA
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 13 mA
Fig 31. Amplifier B: reverse transfer admittance and
phase as a function of frequency; typical values
Fig 32. Amplifier B: output admittance as a function of
frequency; typical values
9397 750 14254
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 16 March 2005
16 of 22
BF1208
Philips Semiconductors
Dual N-channel dual gate MOSFET
8.2.2 Scattering parameters for amplifier B
Table 12: Scattering parameters for amplifier B
VDS(B) = 5 V; VG2-S = 4 V; ID(B) = 13 mA; VDS(A) = 0 V; VG1-S(A) = 0 V; Tamb = 25 °C; typical values.
f
(MHz)
s11
s21
s12
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
50
0.985
−3.42
3.33
100
0.984
−6.96
200
300
s22
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
176.41 0.0010
87.55
0.988
−1.60
3.31
172.70 0.0020
83.45
0.988
−3.16
0.980
−13.51 3.27
165.59 0.0039
82.84
0.987
−6.31
0.975
−20.07 3.23
158.42 0.0054
82.01
0.986
−9.40
400
0.969
−26.61 3.19
151.34 0.0068
79.73
0.984
−12.46
500
0.961
−32.89 3.14
144.33 0.0085
77.91
0.982
−15.57
600
0.955
−39.19 3.07
137.54 0.0100
76.31
0.980
−18.62
700
0.945
−45.39 3.00
130.72 0.0115
73.76
0.977
−21.70
800
0.938
−51.39 2.93
123.98 0.0131
71.58
0.974
−24.76
900
0.930
−57.36 2.85
117.31 0.0145
69.18
0.971
−27.81
1000
0.920
−63.10 2.77
110.39 0.0157
67.54
0.967
−30.86
8.2.3 Noise data for amplifier B
Table 13: Noise data for amplifier B
VDS(B) = 5 V; VG2-S = 4 V; ID(B) = 13 mA; VDS(A) = 0 V; VG1-S(A) = 0 V; Tamb = 25 °C; typical values;
unless otherwise specified.
f (MHz)
NFmin (dB)
Γopt
ratio
(deg)
400
1.3
0.695
13.11
0.694
800
1.4
0.674
32.77
0.674
9397 750 14254
Product data sheet
rn (Ω)
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 16 March 2005
17 of 22
BF1208
Philips Semiconductors
Dual N-channel dual gate MOSFET
9. Test information
VDS(A)
VAGC
5V
4.7 nF
10 kΩ
4.7 nF
RGEN
50 Ω
G2
4.7 nF
Vi
RL
50 Ω
S
BF1208
G1B
50 Ω
4.7 nF
DA
G1A
4.7 nF
50 Ω
L1
2.2 µH
DB
L2
2.2 µH
RG1
4.7 nF
VGG
VDS(B)
0V
5V
001aac201
Fig 33. Cross-modulation test set-up for amplifier A
VDS(A)
VAGC
5V
4.7 nF
10 kΩ
4.7 nF
50 Ω
DA
G1A
4.7 nF
G2
4.7 nF
RGEN
50 Ω
L1
2.2 µH
BF1208
G1B
50 Ω
S
4.7 nF
DB
L2
2.2 µH
RG1
RL
50 Ω
4.7 nF
Vi
VGG
5V
VDS(B)
5V
001aac202
Fig 34. Cross-modulation test set-up for amplifier B
9397 750 14254
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 16 March 2005
18 of 22
BF1208
Philips Semiconductors
Dual N-channel dual gate MOSFET
10. Package outline
Plastic surface mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
01-08-27
04-11-08
SOT666
Fig 35. Package outline SOT666
9397 750 14254
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 16 March 2005
19 of 22
BF1208
Philips Semiconductors
Dual N-channel dual gate MOSFET
11. Revision history
Table 14:
Revision history
Document ID
Release date
Data sheet status
Change notice
Doc. number
Supersedes
BF1208_1
20050316
Product data sheet
-
9397 750 14254
-
9397 750 14254
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 16 March 2005
20 of 22
BF1208
Philips Semiconductors
Dual N-channel dual gate MOSFET
12. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
13. Definitions
14. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
15. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 14254
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 16 March 2005
21 of 22
BF1208
Philips Semiconductors
Dual N-channel dual gate MOSFET
16. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
8.1.1
8.1.2
8.1.3
8.2
8.2.1
8.2.2
8.2.3
9
10
11
12
13
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
Dynamic characteristics . . . . . . . . . . . . . . . . . . 5
Dynamic characteristics for amplifier A. . . . . . . 5
Graphics for amplifier A . . . . . . . . . . . . . . . . . . 6
Scattering parameters for amplifier A . . . . . . . 10
Noise data for amplifier A . . . . . . . . . . . . . . . . 10
Dynamic characteristics for amplifier B. . . . . . 11
Graphics for amplifier B . . . . . . . . . . . . . . . . . 12
Scattering parameters for amplifier B . . . . . . . 17
Noise data for amplifier B . . . . . . . . . . . . . . . . 17
Test information . . . . . . . . . . . . . . . . . . . . . . . . 18
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 20
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 21
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Contact information . . . . . . . . . . . . . . . . . . . . 21
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 16 March 2005
Document number: 9397 750 14254
Published in The Netherlands
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