Seme LAB D1018UK Metal gate rf silicon fet Datasheet

TetraFET
D1018UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B
A
E
(2 pls)
C
1
K
2
3
4
G
F
8
7
6
5
J
Typ.
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
100W – 28V – 500MHz
PUSH–PULL
D
M
Q
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
P
O
N
I
H
• SUITABLE FOR BROAD BAND APPLICATIONS
DD
PIN 1
PIN 3
PIN 5
PIN 7
SOURCE (COMMON)
DRAIN 2
SOURCE (COMMON)
GATE 1
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
O
P
Q
mm
9.14
12.70
45°
6.86
0.76
9.78
19.05
4.19
3.17
1.52R
1.65R
16.51
22.86
0.13
6.35
10.77
PIN 2
PIN 4
PIN 6
PIN 8
Tol.
0.13
0.13
5°
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.13
0.13
0.13
0.02
0.64
0.13
DRAIN 1
SOURCE (COMMON)
GATE 2
SOURCE (COMMON)
Inches
0.360
0.500
45°
0.270
0.030
0.385
0.750
0.165
0.125
0.060R
0.065R
0.650
0.900
0.005
0.250
0.424
Tol.
0.005
0.005
5°
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.005
0.005
0.005
0.001
0.025
0.005
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
250W
70V
±20V
15A
–65 to 150°C
200°C
* Per Side
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/95
D1018UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max. Unit
PER SIDE
BVDSS
Drain–Source
VGS = 0
ID = 100mA
VDS = 28V
VGS = 0
3
mA
VGS = 20V
VDS = 0
1
µA
VGS(th) Gate Threshold Voltage *
ID = 10mA
VDS = VGS
7
V
gfs
VDS = 10V
ID = 3A
IDSS
IGSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Forward Transconductance *
70
1
V
2.4
S
10
dB
50
%
20:1
—
TOTAL DEVICE
GPS
Common Source Power Gain
PO = 100W
η
Drain Efficiency
VDS = 28V
VSWR Load Mismatch Tolerance
f = 500MHz
IDQ = 1.2A
PER SIDE
Ciss
Input Capacitance
VDS = 28V
VGS = –5V f = 1MHz
180
pF
Coss
Output Capacitance
VDS = 28V
VGS = 0
f = 1MHz
90
pF
Crss
Reverse Transfer Capacitance
VDS = 28V
VGS = 0
f = 1MHz
7.5
pF
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Semelab plc.
Thermal Resistance Junction – Case
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Max. 0.7°C / W
Prelim. 10/95
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