Infineon BBY52-02L Silicon tuning diode Datasheet

BBY52...
Silicon Tuning Diodes
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation
For VCO's in mobile communications equipment
BBY52-02L
BBY52-02W
1
2
Type
BBY52-02L*
BBY52-02W
Package
TSLP-2-1
SCD80
Configuration
single, leadless
single
LS (nH) Marking
0.4
K
0.6
KK
* Preliminary
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
7
V
Forward current
IF
20
mA
Operating temperature range
Top
-55 ... 150
°C
Storage temperature
Tstg
-55 ... 150
1
Value
Unit
Oct-24-2002
BBY52...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ.
Unit
max.
DC Characteristics
Reverse current
IR
nA
VR = 6 V
-
-
10
VR = 6 V, TA = 85 °C
-
-
200
AC Characteristics
Diode capacitance
pF
CT
VR = 1 V, f = 1 MHz
1.4
1.85
2.2
VR = 2 V, f = 1 MHz
0.95
1.5
2
VR = 3 V, f = 1 MHz
0.9
1.35
1.75
VR = 4 V, f = 1 MHz
0.85
1.15
1.45
1.1
1.6
2.1
-
0.9
1.7
Capacitance ratio
CT1 /CT4
VR = 1 V, VR = 4 V, f = 1 MHz
Series resistance
rS
VR = 1 V, f = 1 GHz
2
Oct-24-2002
BBY52...
Diode capacitance CT = (VR )
Reverse current IR = (VR)
TA = 25°C
f = 1MHz
45
2.6
pF
pA
2.4
2.3
35
2.2
30
IR
CT
2.1
2
25
1.9
1.8
20
1.7
1.6
15
1.5
1.4
10
1.3
1.2
5
1.1
1
0
0.4 0.8 1.2 1.6
2
2.4 2.8 3.2 V
0
0
4
VR
1
2
3
4
5
V
7
VR
3
Oct-24-2002
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