IPW60R080P7 MOSFET 600VCoolMOSªP7PowerTransistor PG-TO247-3 TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V CoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.It combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody diodeagainsthardcommutationandexcellentESDcapability. Furthermore,extremelylowswitchingandconductionlossesmake switchingapplicationsevenmoreefficient,morecompactandmuch cooler. Features •Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness •Significantreductionofswitchingandconductionlosses •ExcellentESDrobustness>2kV(HBM)forallproducts •BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)*A(below1Ohm*mm²) •LargeportfoliowithgranularRDS(on)selectionqualifiedforavarietyof industrialandconsumergradeapplicationsaccordingtoJEDEC (J-STD20andJESD22) Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Benefits •Easeofuseandfastdesign-inthroughlowringingtendencyandusage acrossPFCandPWMstages •Simplifiedthermalmanagementduetolowswitchingandconduction losses •Increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualitydueto>2kVESD protection •Suitableforawidevarietyofapplicationsandpowerranges Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 80 mΩ Qg.typ 51 nC ID,pulse 110 A Eoss@400V 5.5 µJ Body diode di/dt 900 A/µs Type/OrderingCode Package IPW60R080P7 PG-TO 247-3 Final Data Sheet Marking 60R080P7 1 RelatedLinks see Appendix A Rev.2.0,2017-05-18 600VCoolMOSªP7PowerTransistor IPW60R080P7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.0,2017-05-18 600VCoolMOSªP7PowerTransistor IPW60R080P7 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 37 23 A TC=25°C TC=100°C - 110 A TC=25°C - - 118 mJ ID=5.5A; VDD=50V; see table 10 EAR - - 0.58 mJ ID=5.5A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 5.5 A - MOSFET dv/dt ruggedness dv/dt - - 80 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 129 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - 60 Ncm M3 screws IS - - 37 A TC=25°C Diode pulse current IS,pulse - - 110 A TC=25°C Reverse diode dv/dt3) dv/dt - - 50 V/ns VDS=0...400V,ISD<=37A,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 900 A/µs VDS=0...400V,ISD<=37A,Tj=25°C see table 8 Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive Continuous diode forward current 2) 1) Limited by Tj max. Maximum Duty Cycle D = 0.50 Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical Rg 2) Final Data Sheet 3 Rev.2.0,2017-05-18 600VCoolMOSªP7PowerTransistor IPW60R080P7 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 0.97 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Thermal resistance, junction - ambient RthJA for SMD version - - - °C/W - Soldering temperature, wavesoldering only allowed at leads - - 260 °C Final Data Sheet Tsold 4 1.6mm (0.063 in.) from case for 10s Rev.2.0,2017-05-18 600VCoolMOSªP7PowerTransistor IPW60R080P7 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.5 4 V VDS=VGS,ID=0.59mA - 10 1 - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.069 0.161 0.080 - Ω VGS=10V,ID=11.8A,Tj=25°C VGS=10V,ID=11.8A,Tj=150°C Gate resistance RG - 4.8 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 3 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 2180 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 37 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 69 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 716 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 15 - ns VDD=400V,VGS=13V,ID=11.8A, RG=3.3Ω;seetable9 Rise time tr - 10 - ns VDD=400V,VGS=13V,ID=11.8A, RG=3.3Ω;seetable9 Turn-off delay time td(off) - 70 - ns VDD=400V,VGS=13V,ID=11.8A, RG=3.3Ω;seetable9 Fall time tf - 5 - ns VDD=400V,VGS=13V,ID=11.8A, RG=3.3Ω;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 12 - nC VDD=400V,ID=11.8A,VGS=0to10V Gate to drain charge Qgd - 15 - nC VDD=400V,ID=11.8A,VGS=0to10V Gate charge total Qg - 51 - nC VDD=400V,ID=11.8A,VGS=0to10V Gate plateau voltage Vplateau - 5.2 - V VDD=400V,ID=11.8A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 5 Rev.2.0,2017-05-18 600VCoolMOSªP7PowerTransistor IPW60R080P7 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=11.8A,Tj=25°C 263 - ns VR=400V,IF=6A,diF/dt=100A/µs; see table 8 - 2.9 - µC VR=400V,IF=6A,diF/dt=100A/µs; see table 8 - 22 - A VR=400V,IF=6A,diF/dt=100A/µs; see table 8 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 6 Rev.2.0,2017-05-18 600VCoolMOSªP7PowerTransistor IPW60R080P7 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 140 103 120 102 1 µs 10 µs 100 101 80 100 100 µs 10 ms ID[A] Ptot[W] 1 ms DC 60 10-1 40 10-2 20 10-3 0 0 25 50 75 100 125 10-4 150 100 101 102 TC[°C] 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 102 1 µs 10 µs 101 100 µs 100 1 ms ID[A] 10 ms DC 10-1 0.5 ZthJC[K/W] 100 0.2 0.1 10-1 0.05 10-2 0.02 0.01 10-3 single pulse 10-4 100 101 102 103 10-2 10-5 10-4 10-3 VDS[V] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-2 10-1 100 tp[s] ZthJC=f(tP);parameter:D=tp/T 7 Rev.2.0,2017-05-18 600VCoolMOSªP7PowerTransistor IPW60R080P7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 140 100 20 V 10 V 120 20 V 8V 80 10 V 7V 100 8V 7V 60 6V ID[A] ID[A] 80 60 40 5.5 V 20 5V 6V 40 5.5 V 20 4.5 V 5V 0 4.5 V 0 5 10 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 0.350 3.000 6V 2.500 0.280 RDS(on)[normalized] 5.5 V 6.5 V RDS(on)[Ω] 7V 10 V 20 V 0.210 2.000 1.500 1.000 0.500 0.140 0 18 36 54 72 90 0.000 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=11.8A;VGS=10V 8 Rev.2.0,2017-05-18 600VCoolMOSªP7PowerTransistor IPW60R080P7 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 140 10 25 °C 120 8 120 V 400 V 100 ID[A] 150 °C 60 VGS[V] 6 80 4 40 2 20 0 0 2 4 6 8 10 0 12 0 10 20 VGS[V] 30 40 50 60 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=11.8Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 3 10 125 100 102 25 °C 125 °C 101 EAS[mJ] IF[A] 75 50 100 25 10-1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=5.5A;VDD=50V 9 Rev.2.0,2017-05-18 600VCoolMOSªP7PowerTransistor IPW60R080P7 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 105 690 680 670 104 660 650 Ciss 640 103 C[pF] VBR(DSS)[V] 630 620 610 102 600 Coss 590 580 101 570 560 Crss 550 540 -50 -25 0 25 50 75 100 125 150 100 0 100 200 Tj[°C] 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy Eoss[µJ] 8 4 0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 10 Rev.2.0,2017-05-18 600VCoolMOSªP7PowerTransistor IPW60R080P7 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 11 ID VDS Rev.2.0,2017-05-18 600VCoolMOSªP7PowerTransistor IPW60R080P7 6PackageOutlines Figure1OutlinePG-TO247-3,dimensionsinmm/inches Final Data Sheet 12 Rev.2.0,2017-05-18 600VCoolMOSªP7PowerTransistor IPW60R080P7 7AppendixA Table11RelatedLinks • IFXCoolMOSP7Webpage:www.infineon.com • IFXCoolMOSP7applicationnote:www.infineon.com • IFXCoolMOSP7simulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 13 Rev.2.0,2017-05-18 600VCoolMOSªP7PowerTransistor IPW60R080P7 RevisionHistory IPW60R080P7 Revision:2017-05-18,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2017-05-18 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2017InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 Rev.2.0,2017-05-18