NTE NTE3036 Phototransistor silicon npn photo darlington light detector Datasheet

NTE3036
Phototransistor
Silicon NPN Photo Darlington Light Detector
Description:
The NTE3036 is a silicon NPN photo Darlington light detector in a TO18 type package designed for
use in applications such as industrial inspection, processing and control, counter, sorters, switching
and logic circuit or any design requiring very high radiation sensitivity at low light levels.
Features:
D Popular TO18 Type Hermetic Package for Easy Handling and Mounting
D Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application
D Minimum Light Current: 12mA @ H = 0.5mW/cm2
D External Base for Added Control
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Light Current, IL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
–
10
100
nA
Static Characteristics
Collector Dark Current
ICEO
VCE = 10V, H ∼ 0
Collector–Base Breakdown Voltage
V(BR)CBO IC = 100µA
50
100
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 100µA
40
80
–
V
Emitter–Base Breakdwon Voltage
V(BR)EBO IE = 100µA
10
15.5
–
V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
12
20
–
mA
–
0.6
1.0
V
Optical Characteristics
Light Current
Collector–Emitter Saturation Voltage
IL
VCE(sat)
VCC = 5V, RL = 10Ω, Note 1
IL = 10mA, H =
2mW/cm2
at 2870°K
Photo Current Rise Time
tr
RL = 10Ω, IL = 1mA Peak, Note 2
–
15
100
µs
Photo Current Fall Time
tf
RL = 10Ω, IL = 1mA Peak, Note 2
–
65
150
µs
Note 1. Radiation flux density (H) is equal to 0.5mW/cm2 emitted from a tungsten source at a color
temperature of 2780°K.
Note 2. For unsaturated response time measurement, radiation is provided by pulse GaAs (gallium–
arsenide) light emitting diode (λ 0.9µm) with a pulse width equal to or greater than 500µs,
IL = 1mA peak.
.228 (5.79) Max
.185 (4.69)
.177
(4.5)
.276
(7.01)
Max
.500
(12.7)
Min
.018 (0.45) Dia Typ
.100 (2.54) Dia
Base
Emitter
Collector/Case
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