Fairchild MBR2060CT Schottky rectifier Datasheet

MBR2035CT-MBR2060CT
MBR2035CT - MBR2060CT
Features
•
•
•
•
•
•
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
PIN 1
+
CASE
PIN 2
PIN 3
1
2
3
TO-220AB
Schottky Rectifiers
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Value
Parameter
Units
2035CT
2045CT
2050CT
2060CT
35
45
50
60
VRRM
Maximum Repetitive Reverse Voltage
IF(AV)
Average Rectified Forward Current
.375 " lead length @ TA = 135°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
-65 to +175
°C
Operating Junction Temperature
-65 to +150
°C
IFSM
Tstg
TJ
V
20
A
150
A
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Power Dissipation
2.0
W
RθJA
Thermal Resistance, Junction to Ambient *
60
°C/W
RθJL
Thermal Resistance, Junction to Lead
2.0
°C/W
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Device
Parameter
2035CT
VF
IR
IRRM
Forward Voltage
IF = 10 A, TC = 25°C
IF = 10 A, TC = 125°C
IF = 20 A, TC = 25°C
IF = 20 A, TC = 125°C
Reverse Current @ rated VR TA = 25°C
TA = 125°C
Peak Repetitive Reverse Surge Current
2.0 us Pulse Width, f = 1.0 KHz
2001 Fairchild Semiconductor Corporation
2045CT
Units
2050CT
2060CT
0.57
0.84
0.72
0.80
0.70
0.95
0.85
V
V
V
V
0.1
15
0.15
150
mA
mA
1.0
0.5
A
MBR2035CT - MBR2060CT, Rev. C
(continued)
20
16
12
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.00mm) LOAD
LENGTHS
8
4
0
0
25
50
75
100
125
Ambient Temperature [ºC]
150
175
Peak Forward Surge Current, IFSM [A]
Average Rectified Forward Current, IF [A]
Typical Characteristics
Figure 1. Forward Current Derating Curve
75
50
25
0
1
2
5
10
20
Number of Cycles at 60Hz
50
100
MBR2035CT-MBR2045CT
MBR2035CT-MBR2045CT
1
MBR2050CT-MBR2060CT
0.1
µS
Pulse Width = 300µ
2% Duty Cycle
0
0.2
0.4
0.6
0.8
Forward Voltage, VF [V]
1
2000
MBR2035CT-MBR2045CT
500
MBR2050CT-MBR2060CT
200
1
10
Reverse Voltage, VR [V]
Figure 5. Total Capacitance
2001 Fairchild Semiconductor Corporation
1
MBR2050CT-MBR2060CT
TA = 75º C
0.1
MBR2035CT-MBR2045CT
0.01
TA = 25º C
0.001
1.2
5000
100
0.1
T A = 125 º C
MBR2050CT-MBR2060CT
Figure 3. Forward Voltage Characteristics
1000
Reverse Current, IR [mA]
10
10
100
0
20
40
60
80
100 120 140
Percent of Rated Peak Reverse Voltage [%]
Figure 4. Reverse Current vs Reverse Voltage
Transient Thermal Impedance [ºC/W]
Forward Current, IF [A]
100
50
TA = 25º C
T A = 150 º C
Total Capacitance, CT [pF]
125
Figure 2. Non-Repetitive Surge Current
50
0.01
150
100
10
1
0.1
0.01
0.1
1
10
Pulse Duration [s]
100
Figure 6. Thermal Impedance Characteristics
MBR2035CT - MBR2060CT, Rev. C
MBR2035CT-MBR2060CT
Schottky Rectifier
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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